• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.925-928
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper was carried out some experiments and verifications of mechanism on FIB-CVD using SMI8800 made by Seiko. FIB-CVD has in fact proved to be commercially useful for repair processes because the beam can be focused down to 0.05$\mu\textrm{m}$ dimensions and below and because the same tool can be used to sputter off material with sub-micrometer precision simply by turning off the gas ambient. Recently the chemical vapour deposition induced ion beam has been required more deposition rate and accurate pattern because of trying to manufacture many micro and nano parts. Therefore this paper suggested the optimization parameters and discussed some mechanism of chemical vapour deposition induced ion beam on FIB-CVD for simple pattern.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.177-180
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• 1996

Considerable progress in the development of CVD techniques for the deposition of diamond films has been achieved recently. Despite the polycrystalline structure of this material, its physical properties are now approaching those of natural type IIa diamond crystals. This paper will given some insight into the current status of CVD diamond thechnology with emphasis on optical and thermal applications. The role of process gas impurities like nitrogen will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.83-86
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• 1989

Lead titanate thin films with a perovskite structure were successfully structure were successfully fabricated on titanium substrate by Chemical Vapour Deposition(CVD). Analyses of Auger Electron Spectroscopy(AES) and X-ray Photoelectron Spectroscopy (XPS) have been performed in order to find a chemical composition of lead titanate films. The analysis of chemical composition by AES and XPS was investigated for variations of deposition temperature and Ti(C$_2$H$_{5}$O)$_4$ fractions. The chemical composition of PbTiO$_3$by XPS analysis was almost constant regardless of deposition parameters and the comparison of chemical composition by AES and XPS was performed.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.78-78
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• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.482-486
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.

• Carbon letters
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• v.6 no.2
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• pp.96-100
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• 2005

Taguchi methodology has been applied to get an idea about the parameters related to the chemical vapour deposition technique, which influences the formation of semiconducting carbon thin film of a desired band gap. L9 orthogonal array was used for this purpose. The analysis based on Taguchi methodology suggests that amongst the parameters selected, the temperature of pyrolysis significantly controls the magnitude of band gap (46%). Sintering time has a small influence (30%) on the band gap formation and other factors have almost no influence on the band gap formation. Moreover this analysis suggests that lower temperature of pyrolysis (${\leq}$ $750^{\circ}C$) and lower time of sintering (${\leq}$ 1 h) should be preferred to get carbon thin film with the desired band gap of 1.2eV.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.108-112
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• 1995

Copper and aluminum selective deposition using (hfac)Cu(VTMS) and DMEAA precursors were performed in a warm-wall low pressure chemical vapour deposition reactor. The films of Cu and AI deposited on Corning 7059 glass and quartz with pattern of Cr seed metal. Selective deposition can be achieved at a pressure range of from 10-1 to 10 torr and substrate temperature range of 150-25$0^{\circ}C$. Selective deposition of Cu and AI by CVD is one of candidate for gate material formation fo larger area and high resolution plat panel displays.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.329-332
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• 1989

Lead titanate thin films were deposited on titanium substrates by a chemical vapour deposition(CVD) process involving the application of vapour mixtures of Pb, ethyl titanate( Ti($C_2H_5O_4$)), and oxygen. The lead titanate having a stoichiometric composition has a dc conductivity of $3.2{\times}10^{-12}{\Omega}^{-1}{\cdot}cm^{-1}$ at room temperature. The nonsaturating loops observed in present investigation may be attributed to the $TiO_2$ and TiO layers between the conductive substrate and the $PbTiO_3$ ferroelectric film. The ferroelectric properties of the stoichiometric $PbTiO_3$ film included a remanent polarization of 14.1 ${\mu}C/cm^2$ and a coercive field of 20.16 kV/cm.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1402-1408
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• 1990

We studied the electrical, optical and structural properties of microcrystalline silicon thin films prepared by a new chemical vapour deposition technique, called filament assisted(FA)-CVD. The microcrystalline silicon is sucessfully deposited when the hydrogen dilution ratio exceeds 30. The Raman peak at 520 cm-1 and the X-ray diffraction peak at 27.7\ulcorner0.2\ulcornerbecome sharper with increasing hydrogen dilution ratio. We obtain high quality microcrystalline Si by FA-CVD with optical gap of \ulcorner2.2eV and hydrogen content of \ulcorner3 at %.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.1 no.1
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• pp.37-42
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• 2000

Copper thin films have been prepared by a metal organic chemical vapor deposition (MOCVD) technology on polyimide and TiN substrates. The Cu-MOCVD technology has advantages of the high deposition rate and the good step coverage compared with the conventional physical vapor deposition (PVD) technology in several industrial applications. The Cu films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were annealed in a vacuum condition after the deposition, and the annealing effect on the electrical properties of the films was measured. The crystallinity and the microstructures of the films were observed by scanning electron microscopy (SEM), and the electrical resistivity was measured by 4-point probe. In the case of the Cu deposition on TiN substrate, the best electrical property of the films was measured for the samples prepared at 18$0^{\circ}C$. Very high deposition rate of the Cu film up to 250 nm/min was obtained on the polyimide substrate when the mixture of liquid and vapour precursor was used.