• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.335-338
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• 2004

We suggest Q-band MEMS MIMIC (Millimeter wave Monolithic Integrated Circuit) HEMT Oscillator using DAML (Dielectric-supported Airgapped Mcrostrip Line) structure. We elevated the signal lines from the substrate using dielectric post, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency. These DAML are composed with heist of $10\;{\mu}m$ and post size with $20\;{\mu}m\;{\times}\;20\;{\mu}m$. The MEMS oscillator was successfully integrated by the process of $0.1\;{\mu}m$ GaAs PHEMTs, CPW transmission line and DAML. The phase noise characteristic of the MEMS oscillator was improved more than 7.5 dBc/Hz at a 1 MHz offset frequency than that of the CPW oscillator And the high output power of 7.5 dBm was measured at 34.4 GHz.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.583-586
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• 2005

In this paper, millimeter-wave monolithic integrated circuit (MIMIC) low noise amplifier (LNA) for V-band, which is applicable to 58 GHz, we designed and fabricated. We fabricated the module using the fabricated LNA chips. The V-band MIMIC LNA was fabricated using the high performance $0.1\;{\mu}\;m$ ${\Gamma}-gate$ pseudomorphic high electron mobility transistor (PHEMT). The MIMIC LNA was designed using active and passive device library, which is composed $0.1\;{\mu}\;m$ ${\Gamma}-gate$ PHEMT and coplanar waveguide (CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. Also we fabricated CPW-to-waveguide fin-line transition of WR-15 type for module. The Transmission Line was fabricated using RT Duroid 5880 substrate. The measured results of V-band MIMIC LNA and Module are shown $S_{21}$ gain of 13.1 dB and 8.3 dB at 58 GHz, respectively. The fabricated LNA chip and Module in this work show a good noise figure of 3.6 dB and 5.6 dB at 58 GHz, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.1
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• pp.21-28
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• 2012

In this paper, we propose a flexible zeroth-order resonant(ZOR) antenna. Its zero phase constant ensures that the antenna performance is independent of substrate deformation. A composite right/left-handed transmission line is designed based on coplanar waveguide technology to realize the zeroth-order resonance phenomenon. The CRLH is an implementation of metamaterial(left handed material) which is composed of shunt inductance and series capacitance. In order to yield additional circuital parameter, chip inductor and gap capacitor is added, respectively. The proposed ZOR antenna provides good performances: reasonable bandwidth(6.5 %) and peak gain(0.69~1.39 dBi). Simulated and measured results show that the antenna's resonant frequencies and radiation patterns are almost unchanged at different curvature diameters of 30, 50, 70 mm, as well as for a flat surface.

• Journal of information and communication convergence engineering
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• v.8 no.5
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• pp.489-492
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• 2010

This paper proposes the planar-type modified monopole antennas of loop structure. This antenna has an opened center of a conventional closed loop structure with an inside-folded terminal of the loop microstrip line. The size of the proposed antenna was minimized by folding the end of the loop. Also, the reactance value has been minimized by increasing capacitances between the coupled microstrip line. Therefore the proposed antenna has been compacted to about 20% from a conventional loop antenna and has increased its efficiency. The proposed antennas have an omni-directional pattern, the antenna gain was 3.67 [dBi] and the bandwidth was 900 MHz (2.6~3.56 GHz) with VSWR$\leq$2 from the simulated and the measured results. The frequency utilization coefficient was 29.9%. These properties could satisfy the S-DMB band.

• ETRI Journal
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• v.36 no.1
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• pp.151-154
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• 2014

A novel frequency-switchable antenna that uses PIN diodes and a composite right- and left-handed transmission line (CRLH TL) is proposed. The CRLH TL provides multi-order resonance, including a zeroth-order resonance (ZOR), and its shunt stub determines the ZOR frequency. Thus, the resonant frequency is arbitrarily chosen by lumped chip inductors on the shunt stub. Two prototypes are designed using different chip inductors while maintaining the antenna geometries. Antenna #1 can switch the resonant frequency from 1.8 GHz to 2.3 GHz. Antenna #2 can switch its resonance from 0.9 GHz to 2.3 GHz.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.61 no.1
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• pp.1-4
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• 2012

In this paper, the planar type modified folded loop antennas for S-DMB band is proposed. The proposed antenna consisted of opened center of a conventional closed loop and folded terminal of microstrip line to inside loop antenna. The sizes proposed antenna was minimized by folding the terminal of the loop. Also, It was minimized reactance value by increasing capacitances between coupled microstrip line. Therefore the proposed antennas compacted about 20% than a conventional loop antenna and increased efficiency of antenna. The proposed antennas got an omni-directional pattern, the antenna gain was 3.67 [dBi] and the bandwidth was 900 MHz (2.6-3.56 GHz) with VSWR${\leq}$2 from the simulated and the measured results. The frequency utilization coefficient was 29.9 %. These properties could satisfy the S-DMB band.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.42-50
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• 2006

Co-Fe-Al-O nano-granular thin films with high electrical resistivity, fabricated by radio frequency magnetron sputtering under an $Ar+O_2$ atmosphere, are found to show good soft magnetic properties in the GHz frequency range. The real part value of the relative permeability is 260 at low frequencies and this value is maintained up to the GHz frequency range. A non-integrated type noise filter on a coplanar waveguide transmission line is demonstrated by using the Co-Fe-Al-O nano-granular thin film with the dimensions of $4\;mm(l){\times}4\;mm(w){\times}0.1\;{\mu}m(t)$. The insertion loss is very low being less than 0.3 dB and this low value is maintained up to 2 GHz. At a ferromagnetic resonance frequency of 3.3 GHz, the degree of noise suppression is measured to be 3 dB. This level of noise attenuation is small for real applications, but there is much room for further improvement by increasing the magnetic volume and integrating the magnetic thin film into the CPW transmission line.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1806-1809
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• 2008

Study that form micro pattern by direct ink jet printing method is getting attention recently. Direct ink jet printing spout fine droplet including nano metal particle by force or air pressure. There is reason which ink jet printing method is profitable especially in a various micro-patterning technology. It can embody patterns directly without complex process such as mask manufacture or screen-printing for existent lithography. In this study, research of a technology that ejects fine droplet form of Pico liter and forms metal micro pattern was carried with inkjet head of piezoelectricity drive system. Droplet established pattern while ejecting consecutively and move on the surface at the fixed speed. Patterns formed in ink are mixed with organic solvent and polymer that act as binder. So added thermal hardening process after evaporate organic solvent at isothermal after printing. I executed high frequency special quality estimation of CPW transmission line to confirm electrical property of manufactured circuit board. We tried a large area printing to confirm application possibility of an ink jet technology.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1972-1975
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• 2002

In this paper, we have proposed low temperature co-fired ceramic (LTCC) based packaging for RF MEMS devices. The packaging structure is designed and evaluated with 3D full field simulation. 50 ${\Omega}$ matched coplanar waveguide(CPW) transmission line is employed as the test vehicle to evaluate the performances of the proposed package structure. The line is encapsulated with the LTCC packaging lid and connected to the via feed line. To reduce the insertion loss due to the packaging lid, the cavity with via post is formed in the packaging lid. The performances of the package structure is simulated with the different cavity depth and via-to-via length. Simulation results show that the proposed package structure has reflection loss better than 20 dB and insertion loss lower than 0.1 dB from DC to 30 GHz with the cavity depth and via-to-via length of 300 ${\mu}m$ and 350 ${\mu}m$, respectively. To realize the designed package structure, the cavity patterning is tested using the sandblast of LTCC.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.135-145
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• 2006

This paper presents the theory, design, fabrication and characterization of the novel low actuation voltage capacitive shunt RF-MEMS switch using a corrugated membrane with HRS MEMS packaging. Analytical analyses and experimental results have been carried out to derive algebraic expressions for the mechanical actuation mechanics of corrugated membrane for a low residual stress. It is shown that the residual stress of both types of corrugated and flat membranes can be modeled with the help of a mechanics theory. The residual stress in corrugated membranes is calculated using a geometrical model and is confirmed by finite element method(FEM) analysis and experimental results. The corrugated electrostatic actuated bridge is suspended over a concave structure of CPW, with sputtered nickel(Ni) as the structural material for the bridge and gold for CPW line, fabricated on high-resistivity silicon(HRS) substrate. The corrugated switch on concave structure requires lower actuation voltage than the flat switch on planar structure in various thickness bridges. The residual stress is very low by corrugating both ends of the bridge on concave structure. The residual stress of the bridge material and structure is critical to lower the actuation voltage. The Self-alignment HRS MEMS package of the RF-MEMS switch with a $15{\Omega}{\cdot}cm$ lightly-doped Si chip carrier also shows no parasitic leakage resonances and is verified as an effective packaging solution for the low cost and high performance coplanar MMICs.