• Title/Summary/Keyword: CMP pad

Search Result 182, Processing Time 0.025 seconds

Optimization Of CMP for $SiO_2$ Thin Film with a Control of Temperature in Pad Conditioning Process (패드 컨디셔닝시 온도조절을 통한 산화막 CMP 최적화)

  • Choi, Gwon-Woo;Park, Sung-Woo;Kim, Nam-Hoon;Chang, Eui-Goo;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.11a
    • /
    • pp.731-734
    • /
    • 2004
  • As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. Polishing pads play a key role in CMP, which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. It is investigated the performance of $SiO_2-CMP$ process using commercial silica slurry as a pad conditioning temperature increased after CMP process. This study also showed the change of SEM images in the pore geometry on the CMP pad surface after use with a different pad conditioning temperature.

  • PDF

The Effect of Mechanical Properties of Polishing Pads on Oxide CMP ( Chemical Mechanical Planarization )

  • Hong, Yi-Koan;Eom, Dae-Hong;Kang, Young-Jae;Park, Jin-Goo;Kim, Jae-Suk;Kim, Geon;Lee, Ju-Yeol;Park, In-Ha
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
    • /
    • 2002.10b
    • /
    • pp.445-446
    • /
    • 2002
  • The purpose of this study was to investigate the effect of micro holes, pattern structure and elastic modulus of pads on the polishing behavior such as the removal rate and WIWNU (within wafer non-uniformity) during CMP. The regular holes on the pad act as the superior abrasive particle's reservoir and regular distributor at the bulk pad, respectively. The superior CMP performance was observed at the laser processed bulk pad with holes. Also, th ε groove pattern shape was very important for the effective polishing. Wave grooved pad showed higher removal rates than K-grooved pad. The removal rate was linearly increased as the top pad's elastic modulus increased.

  • PDF

A Study on the Within Wafer Non-uniformity of Oxide Film in CMP (CMP 패드 강성에 따른 산화막 불균일성(WIWNU)에 관한 연구)

  • Park, Ki-Hyun;Jung, Jae-Woo;Park, Boum-Young;Seo, Heon-Deok;Lee, Hyun-Seop;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.6
    • /
    • pp.521-526
    • /
    • 2005
  • Within wafer non-uniformity(WIWNU) improves as the stiffness of pad decrease. We designed the pad groove to study of pad stiffness on WIWNU in Chemical mechanical polishing(CMP) and measured the pad stiffness according to groove width. The groove influences effective pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. An Increase of the apparent contact area of pad by groove width results in decrease of effective pad stiffness. WIWNU and profile of removal tate improved as effective pad stiffness decreased. Because grooving the pad reduce its effective stiffness and it makes slurry distribution to be uniform. Futhermore, it ensures that pad conforms to wafer-scale flatness variability. By grooving the top pad, it is possible to reduce its stiffness and hence reduce WIWNU and edge effect.

A Study on Novel Conditioning for CMP (화학기계적연마(CMP) 컨디셔닝에 관한 연구)

  • Lee, Sung-Hoon;Kim, Hyoung-Jae;Ahn, Dae-Gyun;Jeong, Hae-Do
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.16 no.5 s.98
    • /
    • pp.40-47
    • /
    • 1999
  • In CMP for semiconductor wafer films, the acceptable within-chip planarity, within-wafer and wafer-to-wafer nonuniformity could be achieved by conditioning. The role of conditioning is to remove continuously polishing residues from pad and to maintain the initial pad surface pores. To reach these requirements, the diamond grits disk has been considered as a conventional conditioner. However, we have investigated many defects as scratch on wafers out of diamond grits shedding, contaminations from bonding materials, and pad pore subsidences by over-conditioning. So, this paper studies the effect of ultrasonic vibration in CMP conditioning as a representative. The effect of ultrasonic vibration was certified through ILD, Metal CMP.

  • PDF

The Study of ILD CMP Using Abrasive Embedded Pad (고정입자 패드를 이용한 층간 절연막 CMP에 관한 연구)

  • 박재홍;김호윤;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2001.04a
    • /
    • pp.1117-1120
    • /
    • 2001
  • Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

  • PDF

The Study of Metal CMP Using Abrasive Embedded Pad (고정입자 패드를 이용한 텅스텐 CMP에 관한 연구)

  • Park, Jae-Hong;Kim, Ho-Yun;Jeong, Hae-Do
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.18 no.12
    • /
    • pp.192-199
    • /
    • 2001
  • Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

  • PDF

Interrelation of the Diamond Disk and pad PCR in the CMP Process (CMP 공정에서 Diamond Disk와 Pad PCR 상관관계 연구)

  • Yun, Young-Eun;No, Yong-Han;Yoon, Bo-Earn;Bae, Sung-Hun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.11a
    • /
    • pp.359-361
    • /
    • 2006
  • As circuits become increasingly complex and devices sizes shrinks, the demands placed on global planarization of higher level. Chemical Mechanical Polishing (CMP) is an indispensable manufacturing process used to achieve global planarity. In the CMP process, Diamond Disk (DD) plays an important role in the maintenance of removal rate. According to studies, the cause of removal rate decrease in the early or end stage of diamond disk lifetime comes from pad surface change. We also presented pad cutting rate (PCR) as a useful cutting ability index of DD and studied PCR trend about variable parameters that including size, hardness, shape of DD and RPM, pressure of conditioner It has been shown that PCR control ability of pressure and shape is superior to RPM and size. High pressure leads to a decrease of cell open ratio of pad surface because polyurethane of pad is destroyed by pressure. So low pressure high RPM condition is a proper removal rate sustain. By examining correlations between RPM and pressure of conditioner, it has been shown that PCR safe zoneto satisfy proper removal rate has the range 0.06mm/hr to 0.12mm/hr.

  • PDF

The Characterization of the Conditioner Disks with Various Diamond Shapes (다이아몬드 형상에 따른 컨디셔너 디스크의 특성 평가)

  • Kim, Kyu-Chae;Kang, Young-Jae;Yu, Young-Sam;Park, Jin-Goo;Won, Young-Man;Oh, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.06a
    • /
    • pp.563-564
    • /
    • 2006
  • Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A diamond disk use during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In. this study, we characterized diamond disk with 9 kinds of sample.

  • PDF

Design Variables of Chemical-Mechanical Polishing Conditioning System to Improve Pad Wear Uniformity (패드 마모 균일성 향상을 위한 CMP 컨디셔닝 시스템 설계 변수 연구)

  • Park, Byeonghun;Park, Boumyoung;Jeon, Unchan;Lee, Hyunseop
    • Tribology and Lubricants
    • /
    • v.38 no.1
    • /
    • pp.1-7
    • /
    • 2022
  • Chemical-mechanical polishing (CMP) process is a semiconductor process that planarizes a wafer surface using mechanical friction between a polishing pad and a substrate surface during a specific chemical reaction. During the CMP process, polishing pad conditioning is applied to prevent the rapid degradation of the polishing quality caused by polishing pad glazing through repeated material removal processes. However, during the conditioning process, uneven wear on the polishing pad is inevitable because the disk on which diamond particles are electrodeposited is used. Therefore, the abrasion of the polishing pad should be considered not only for the variables during the conditioning process but also when designing the CMP conditioning system. In this study, three design variables of the conditioning system were analyzed, and the effect on the pad wear profile during conditioning was investigated. The three design variables considered in this study were the length of the conditioner arm, diameter of the conditioner disk, and distance between centers. The Taguchi method was used for the experimental design. The effect of the three design variables on pad wear and uniformity was assessed, and new variables used in conditioning system design were proposed.

A Study on STI CMP Characteristics using Microstructure Pad (마이크로 표면 구조물을 갖는 패드의 STI CMP 특성 연구)

  • Jung, Jae-Woo;Park, Ki-Hyun;Jang, One-Moon;Park, Sun-Joon;Jeong, Moon-Ki;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.11a
    • /
    • pp.356-357
    • /
    • 2005
  • Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

  • PDF