• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05c
• /
• pp.228-232
• /
• 2002

The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing(CMP) process in 0.18 ${\mu}m$ semiconductor device. However it does have various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining removal rate and non-uniformity. In this paper, We studied the DOE(design of experiment) method for the optimized CMP process. Various process variations, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal process parameters.

• Transactions of Materials Processing
• /
• v.13 no.3
• /
• pp.225-229
• /
• 2004

Chemical Mechanical Polishing(CMP) process becomes one of the most important semiconductor processes. But the basic mechanism of CMP still does not established. Slurry fluid dynamics that there is a slurry film between a wafer and a pad and contact mechanics that a wafer and a pad contact directly are the two main studies for CMP. This paper based on the latter one, especially on the abrasion wear model. Material Removal Rate(MRR) is calculated using the trajectory length of every point on a wafer during the process time. Both the rotational velocity of a wafer and a pad and the wafer oscillation velocity which has omitted in other studies are considered. For the purpose of the verification of our simulation, we used the experimental results of S.H.Li et al. The simulation results show that the tendency of the calculated MRR using the relative velocity is very similar to the experimental results and that the oscillation effect on MRR at a real CMP condition is lower than 1.5%, which is higher than the relative velocity effect of wafer, and that the velocity factor. not the velocity itself, should be taken into consideration in the CMP wear model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.185-188
• /
• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.18 no.6
• /
• pp.1401-1406
• /
• 2014

Knowledge of the manufacturing process of semiconductor devices in order to obtain a copper pattern using chemical mechanical polishing (CMP) planarization using a Wafer polishing process is applied with a thickness of the copper measured in real time, which need to be precisely controlled by, where the acquisition the actual thickness of the sensor value with the calculated value in terms of error can occur in the process. Approximated the actual measurement values so as to obtain a method using a simple average, moving average, compared to the results using filters onggo Strom real-time measurements of the thickness of the units of the control system to reduce the variation in the implementation of the method described for the.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.3
• /
• pp.203-207
• /
• 2008

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials. There are many elements such as slurry, polishing pad, process parameters and conditioning in CMP process. Especially, polishing pad is considered as one of the most important consumables because this affects its performances such as WIWNU(within wafer non-uniformity) and MRR(material removal rate). In polishing pad, grooves and pores on its surface affect distribution of slurry, flow and profile of MRR on wafer. A subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure(MS) pad. MS pad is designed to have uniform structure on its surface and manufactured by micro-molding technology. And then STI CMP performances such as pattern selectivity, erosion and comer rounding are evaluated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.2
• /
• pp.131-136
• /
• 2000

We have investigated the slurry induced metallic contaminations of undoped and doped silicate oxides surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-orthyo-silicate glass(PE-TEOS), O3 boro-phos-pho-silicate glass(O3-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing which is due to a CMP slurry. The polished O3-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents. In addition, the polishing removal rate of PSG oxides had a linear relationship as a function of phosphorus contents.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2001.11a
• /
• pp.235-239
• /
• 2001

In recent years, as Chemical Mechanical Planarization(CMP) has been routinely utilized in integrated circuit(IC) fabrication, the consumption of slurry, main consumable in a CMP process, is greatly increased. Thus the reprocess of CMP slurries has been actively considered in the industry to reduce cost-of-consumable (COC). The main purpose of this study was to recycle the used oxide slurry using filters as a new method. As a result, Ultra Fine(UF) Filter could distinguish silica from the used oxide slurry and Reverse Osmosis(RO) Filter could distinguish Deionized(DI) Water and chemistry from chemistry solution. The tetraethylorthosilicate removal rate was almost the same as the number of recycle polishing was increased, when it was modified by slightly adding new SS-12 slurry. The microscratch didnt found as the number of recycle polishing was increased.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.11a
• /
• pp.127-128
• /
• 2010

• Tribology and Lubricants
• /
• v.39 no.2
• /
• pp.72-75
• /
• 2023

Silicon carbide (SiC) is used as a substrate material for power semiconductors; however, SiC chemical mechanical polishing (CMP) requires considerable time owing to its chemical stability and high hardness. Therefore, researchers are attempting to increase the material removal rate (MRR) of SiC CMP using various methods. Mixed-abrasive CMP (MAS CMP) is one method of increasing the material removal efficiency of CMP by mixing two or more particles. The aim of this research is to study the mathematical modeling of the MRR of MAS CMP of SiC with SiO₂ and TiO₂ particles. With a total particle concentration of 32 wt, using 80-nm SiO₂ particles and 25-nm TiO₂ particles maximizes the MRR at 8 wt of the TiO₂ particle concentration. In the case of 5 nm TiO₂ particles, the MRR tends to increase with an increase in TiO₂ concentration. In the case of particle size 10-25 nm TiO₂, as the particle concentration increases, the MRR increases to a certain level and then decreases again. TiO₂ particles of 25 nm or more continuously decreased MRR as the particle concentration increased. In the model proposed in this study, the MRR of MAS CMP of SiC increases linearly with changes in pressure and relative speed, which shows the same result as the Preston's equation. These results can contribute to the future design of MAS; however, the model needs to be verified and improved in future experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.545-545
• /
• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.