• Title/Summary/Keyword: CMP (chemical mechanical polishing)

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Optimization of CMP Process parameter using DOE(Design of Experiment) Technique (DOE(Design of Experiment)기법을 통한 CMP 공정 변수의 최적화)

  • Lee, Kyoung-Jin;Park, Sung-Woo;Park, Chang-Jun;Kim, Ki-Wook;Jeong, So-Young;Kim, Chul-Bok;Choi, Woon-Shik;Kim, Sang-Yong;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.228-232
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    • 2002
  • The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing(CMP) process in 0.18 ${\mu}m$ semiconductor device. However it does have various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining removal rate and non-uniformity. In this paper, We studied the DOE(design of experiment) method for the optimized CMP process. Various process variations, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal process parameters.

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MRR model for the CMP Process Considering Relative Velocity (상대속도를 고려한 CMP 공정에서의 연마제거율 모델)

  • 김기현;오수익;전병희
    • Transactions of Materials Processing
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    • v.13 no.3
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    • pp.225-229
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    • 2004
  • Chemical Mechanical Polishing(CMP) process becomes one of the most important semiconductor processes. But the basic mechanism of CMP still does not established. Slurry fluid dynamics that there is a slurry film between a wafer and a pad and contact mechanics that a wafer and a pad contact directly are the two main studies for CMP. This paper based on the latter one, especially on the abrasion wear model. Material Removal Rate(MRR) is calculated using the trajectory length of every point on a wafer during the process time. Both the rotational velocity of a wafer and a pad and the wafer oscillation velocity which has omitted in other studies are considered. For the purpose of the verification of our simulation, we used the experimental results of S.H.Li et al. The simulation results show that the tendency of the calculated MRR using the relative velocity is very similar to the experimental results and that the oscillation effect on MRR at a real CMP condition is lower than 1.5%, which is higher than the relative velocity effect of wafer, and that the velocity factor. not the velocity itself, should be taken into consideration in the CMP wear model.

Effects of Consumable on STI-CMP Process (STI-CMP 공정에서 Consumable의 영향)

  • 김상용;박성우;정소영;이우선;김창일;장의구;서용진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.185-188
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    • 2001
  • Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

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A Study of Data correction method when in-situ end point detection in Chemical-Mechanical Polishing of Copper Overlay (구리 박막 CMP의 실시간 end point detection을 위한 데이터 정밀도 개선 방법에 관한 연구)

  • Kim, Nam-Woo;Hur, Chang-Wu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.6
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    • pp.1401-1406
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    • 2014
  • Knowledge of the manufacturing process of semiconductor devices in order to obtain a copper pattern using chemical mechanical polishing (CMP) planarization using a Wafer polishing process is applied with a thickness of the copper measured in real time, which need to be precisely controlled by, where the acquisition the actual thickness of the sensor value with the calculated value in terms of error can occur in the process. Approximated the actual measurement values so as to obtain a method using a simple average, moving average, compared to the results using filters onggo Strom real-time measurements of the thickness of the units of the control system to reduce the variation in the implementation of the method described for the.

Development of Microstructure Pad and Its Performances in STI CMP (미세 표면 구조물을 갖는 패드의 제작 및 STI CMP 특성 연구)

  • Jeong, Suk-Hoon;Jung, Jae-Woo;Park, Ki-Hyun;Seo, Heon-Deok;Park, Jae-Hong;Park, Boum-Young;Joo, Suk-Bae;Choi, Jae-Young;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.203-207
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    • 2008
  • Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials. There are many elements such as slurry, polishing pad, process parameters and conditioning in CMP process. Especially, polishing pad is considered as one of the most important consumables because this affects its performances such as WIWNU(within wafer non-uniformity) and MRR(material removal rate). In polishing pad, grooves and pores on its surface affect distribution of slurry, flow and profile of MRR on wafer. A subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure(MS) pad. MS pad is designed to have uniform structure on its surface and manufactured by micro-molding technology. And then STI CMP performances such as pattern selectivity, erosion and comer rounding are evaluated.

CMP Slurry Induction Properties of Silicate Oxides Deposited on Silicon Wafer (실리콘 웨이퍼위에 증착된 실리케이트 산화막의 CMP 슬러리 오염 특성)

  • 김상용;서용진;이우선;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.2
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    • pp.131-136
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    • 2000
  • We have investigated the slurry induced metallic contaminations of undoped and doped silicate oxides surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-orthyo-silicate glass(PE-TEOS), O3 boro-phos-pho-silicate glass(O3-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing which is due to a CMP slurry. The polished O3-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents. In addition, the polishing removal rate of PSG oxides had a linear relationship as a function of phosphorus contents.

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Physical and Chemical Characterization of Recycled Oxide CMP Slurry (재생된 옥사이드 CMP 슬러리의 물리적, 화학적 특징에 대한 연구)

  • 김명식;박진구;이관호
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.11a
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    • pp.235-239
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    • 2001
  • In recent years, as Chemical Mechanical Planarization(CMP) has been routinely utilized in integrated circuit(IC) fabrication, the consumption of slurry, main consumable in a CMP process, is greatly increased. Thus the reprocess of CMP slurries has been actively considered in the industry to reduce cost-of-consumable (COC). The main purpose of this study was to recycle the used oxide slurry using filters as a new method. As a result, Ultra Fine(UF) Filter could distinguish silica from the used oxide slurry and Reverse Osmosis(RO) Filter could distinguish Deionized(DI) Water and chemistry from chemistry solution. The tetraethylorthosilicate removal rate was almost the same as the number of recycle polishing was increased, when it was modified by slightly adding new SS-12 slurry. The microscratch didnt found as the number of recycle polishing was increased.

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Material Removal Rate Modeling of SiO2/TiO2 Mixed-Abrasive Slurry CMP for SiC (SiO2/TiO2 혼합입자 슬러리 SiC CMP의 재료제거율 모델링)

  • Hyunseop Lee
    • Tribology and Lubricants
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    • v.39 no.2
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    • pp.72-75
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    • 2023
  • Silicon carbide (SiC) is used as a substrate material for power semiconductors; however, SiC chemical mechanical polishing (CMP) requires considerable time owing to its chemical stability and high hardness. Therefore, researchers are attempting to increase the material removal rate (MRR) of SiC CMP using various methods. Mixed-abrasive CMP (MAS CMP) is one method of increasing the material removal efficiency of CMP by mixing two or more particles. The aim of this research is to study the mathematical modeling of the MRR of MAS CMP of SiC with SiO2 and TiO2 particles. With a total particle concentration of 32 wt, using 80-nm SiO2 particles and 25-nm TiO2 particles maximizes the MRR at 8 wt of the TiO2 particle concentration. In the case of 5 nm TiO2 particles, the MRR tends to increase with an increase in TiO2 concentration. In the case of particle size 10-25 nm TiO2, as the particle concentration increases, the MRR increases to a certain level and then decreases again. TiO2 particles of 25 nm or more continuously decreased MRR as the particle concentration increased. In the model proposed in this study, the MRR of MAS CMP of SiC increases linearly with changes in pressure and relative speed, which shows the same result as the Preston's equation. These results can contribute to the future design of MAS; however, the model needs to be verified and improved in future experiments.

Effect of Hydroxyl Ethyl Cellulose Concentration in Colloidal Silica Slurry on Surface Roughness for Poly-Si Chemical Mechanical Polishing

  • Hwang, Hee-Sub;Cui, Hao;Park, Jin-Hyung;Paik, Ungyu;Park, Jea-Gun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.545-545
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    • 2008
  • Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

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