• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.448-451
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• 2011

SoC에서 칩 내부의 온도를 측정하기 위한 proportional-to-absolute-temperature (PTAT) 회로와 sensing 된 아날로그 신호를 디지털로 변환하기 위해 4-bit analog-to-digital converter (ADC)로 구성된 temperature sensor를 제안한다. CMOS 공정에서 vertical PNP 구조를 이용하여 PTAT 회로가 설계되었다. 온도변화에 둔감한 ADC를 구현하기 위해 아날로그 회로를 최소로 사용하는 successive approximation (SA) ADC가 이용되었다. 4-bit SA ADC는 capacitor DAC와 time-domain 비교기를 이용함으로 전력소모를 최소화하였다. 제안된 temperature sensor는 2.5V $0.25{\mu}m$ 1-poly 9-metal CMOS 공정을 이용하여 설계되었고, $50{\sim}150^{\circ}C$ 온도 범위에서 동작한다. Temperature sensor의 면적과 전력 소모는 각각 $130{\times}390\;um^2$과 868 uW이다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.6
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• pp.1117-1122
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• 2009

In this work, temperature sensor and control circuit for measuring temperature are proposed. The proposed circuit can be fabricated without additional CMOS fabrication process and the output of proposed circuit is digital value. The supply voltage is 5volts and the circuit is designed by using 0.5${\mu}m$ CMOS process. The circuit for measuring temperature consists of PWM control circuit, VCO, counter and register. consisted The frequency of PWM control circuit is 23kHz and the frequency of VCO is 416kHz, 1MHz and 2MHz, respectively. The circuit operation is analyzed by using SPICE.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.3
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• pp.555-562
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• 2007

In order to display Bayer input stream received from CMOS image sensor to the display device, image signal processing must be performed. That is, the hardware performing the image signal processing for Bayer data is called ISP(Image Signal Processor). We can see real image through ISP processing. ISP executes functionalities for gamma correction, interpolation, color space conversion, image effect, image scale, AWB, AE and AF. In this paper, we obtained the optimum algorithm through software verification of ISP module for CMOS camera image sensor and described using VHDL and verified in ModelSim6.0a simulator. Also we downloaded into Xilinx XCV-1000e for the designed ISP module and completed the board level verification using PCI interface.

• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.85-90
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• 2017

A wide dynamic range (WDR) CMOS image sensor (CIS) was developed with a specialized readout architecture for realizing high-sensitivity (HS) and low-sensitivity (LS) reading modes. The proposed pixel is basically a three-transistor (3T) active pixel sensor (APS) structure with an additional transistor. In the developed WDR CIS, only one mode between the HS mode for relatively weak light intensity and the LS mode for the strong light intensity is activated by an external controlling signal, and then the selected signal is read through each column-parallel readout circuit. The LS mode is implemented with the column capacitors and a feedback structure for adjusting column capacitor size. In particular, the feedback circuit makes it possible to change the column node capacitance automatically by using the incident light intensity. As a result, the proposed CIS achieved a wide dynamic range of 94 dB by synthesizing output signals from both modes. The prototype CIS is implemented with $0.18-{\mu}m$ 1-poly 6-metal (1P6M) standard CMOS technology, and the number of effective pixels is 176 (H) ${\times}$ 144 (V).

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.341-346
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• 2006

We have fabricated SOI CMOS active pixel image sensor with the pinned photodiode on handle wafer in order to reduce dark currents and improve spectral response. The structure of the active pixel image sensor is 4 transistors APS which consists of a reset and source follower transistor on seed wafer, and is comprised of the photodiode, transfer gate, and floating diffusion on handle wafer. The source of dark current caused by the interface traps located on the surface of a photodiode is able to be eliminated, as we apply the pinned photodiode. The source of dark currents between shallow trench isolation and the depletion region of a photodiode can be also eliminated by the planner process of the hybrid bulk/SOI structure. The photodiode could be optimized for better spectral response because the process of a photodiode on handle wafer is independent of that of transistors on seed wafer. The dark current was about 6 pA at 3.3 V of floating diffusion voltage in the case of transfer gate TX = 0 V and TX=3.3 V, respectively. The spectral response of the pinned photodiode was observed flat in the wavelength range from green to red.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.571-574
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• 2008

In this paper, we propose $256{\times}256$ pixel array fingerprint sensor with an advanced circuits for detecting. The pixel level simple detection circuit converts from a small and variable sensing current to binary voltage out effectively. We minimizes an electrostatic discharge(ESD) influence by applying an effective isolation structure. The sensor circuit blocks were designed and simulated in standard CMOS $0.35{\mu}m$ process. Full custom layout is performed in the unit sensor pixel and auto placement and routing is performed in the full chip.

• Journal of Sensor Science and Technology
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• v.26 no.4
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• pp.223-227
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• 2017

Conventional CMOS image sensors (CISs) have a trade-off relationship between dynamic range and sensitivity. In addition, their sensitivity is determined by the photodiode capacitance. In this paper, CISs that consist of dual-sensitivity photodiodes in a unit pixel are proposed for achieving wide dynamic ranges. In the proposed CIS, signal charges are generated in the dual photodiodes during integration, and these generated signal charges are accumulated in the floating-diffusion node. The signal charges generated in the high-sensitivity photodiodes are transferred to the input of the comparator through an additional source follower, and the signal voltages converted by the source follower are compared with a reference voltage in the comparator. The output voltage of the comparator determines which photodiode is selected. Therefore, the proposed CIS composed of dual-sensitivity photodiodes extends the dynamic range according to the intensity of light. A $94{\times}150$ pixel array image sensor was designed using a conventional $0.18{\mu}m$ CMOS process and its performance was simulated.

• Journal of Sensor Science and Technology
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• v.24 no.2
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• pp.79-82
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• 2015

This paper proposes a novel complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) and presents its performance characteristics. The proposed APS exhibits a linear-logarithmic response, which is simulated using a standard $0.35-{\mu}m$ CMOS process. To maintain high sensitivity and improve the dynamic range (DR) of the proposed APS at low and high-intensity light, respectively, two additional nMOSFETs are integrated into the structure of the proposed APS, along with a photogate. The applied photogate voltage reduces the sensitivity of the proposed APS in the linear response regime. Thus, the conversion gain of the proposed APS changes from high to low owing to the addition of the capacitance of the photogate to that of the sensing node. Under high-intensity light, the integrated MOSFETs serve as voltage-light dependent active loads and are responsible for logarithmic compression. The DR of the proposed APS can be improved on the basis of the logarithmic response. Furthermore, the reference voltages enable the tuning of the sensitivity of the photodetector, as well as the DR of the APS.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.341-344
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• 2002

This paper is proposed a 8-bit analog to digital converter for CMOS image sensor. A analog to digital converter for CMOS image sensor is required function to control gain. Frequency divider is used In control gain in this proposed analog to digital converter. At 3.3 Volt power supply, total static power dissipation is 8㎽ and programmable gain control range is 30㏈. Newly suggested analog to digital converter is designed by 0.35um 2-poly 4-metal CMOS technology.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.224-227
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• 1999

This paper presents a design of the real-time preprocessor for CMOS image sensor suitable to the digital camera applications. CMOS image sensor offers some advantages in on-chip integration, system power reduction, and low cost. However, it has a lower-quality image than CCDs. We describe an image enhancement algorithm, which includes color interpolation, color correction, gamma correction, sharpening, and automatic exposure control, to compensate for this disadvantage, and present its efficient hardware architecture to implement on the real-time processor. The presented real-time preprocessor was designed using VHDL, and it contains about 19.2K logic gates. We also implement our system on FPGA chips in order to provide the real-time adjustment and it was successfully tested.