• New & Renewable Energy
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• v.1 no.2 s.2
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• pp.6-10
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• 2005

[ $CulnSe2$ ]계 화합물은 직접천이형 반도체로 광흡수계수가 매우 높아 박막형 태양전지 제조에 매우 유리하다. 또한 화학적으로 안정하며 Ga, Al 등을 첨가하면 에너지 금지대폭을 조절할 수 있어 Wide Bandgap 태양전지 및 탠덤구조 태양전지를 제조하기에도 용이하다. CIS 물질에서 In을 $20-30\%$ 정도 치환한 $Cu(In,\;Ga)Se_2(CIGS)$ 태양전지의 경우 19.5%의 세계 최고 효율을 보고하고 있으며 이는 다결정 실리콘 태양전지의 효율과 비슷한 수준이다. 본 연구에서는 동시 질공증발법을 이용하여 증착한 CIGS 박막 및 $CuGaSe_2(CGS)$ 박막을 이용하여 태양전지를 제조하였다. 공정의 재현성 및 결정립계가 큰 광흡수층 제조를 위하여 실시간 기판 온도 모니터링 시스템을 도입하였으며 버퍼층으로는 용액성장한 CdS 박막을 사용하였다. SLG/MO/CIGS(CGS)/CdS/ZnO/Al 구조의 태양전지를 제조하여 면적 $0.5cm^2$에서 각각 $17\%(CIGS)$와 $7\%(CGS)$의 효율을 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.41-44
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• 1999

Displacement current was generated in the pressure stimulus and light stimulus. Solution of azobenzene molecules (8A5H) have to character trans-to-cis. Pressure stimulus generate in the pressure and current. light stimulus generate in the displasement current. The Maxwell displacement current measuring technique has been applied for the investigation of azobenzene organic thin films under alternating photoirradiation with ultraviolet(360nm) and visible (450nm) light. The displacement current was generated due to the trans-to-cis photoisomerization by irradiation with ultraviolet light(λ$_1$=360 nm) Whereas the displacement current was generated in the opposite direction due to the cis-to-trans photoisomerization by irradiation with visible light(λ$_2$=450nm). As result, To show twice reaction certainly phase transition in pressure. A first range generated from 24$\AA$$^2$ to 29$\AA$$^2$and second range generated from 20$\AA$$^2$to 24$\AA$$^2$. Also, cetainfy stimulus apper low pressure and high pressure in photoirradiation. To see different every moment phase transition.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.12-18
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• 2010

$CuInSe_2$ (CIS) thin films were electrodeposited on Mo-coated glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ ions, depending on deposition parameters such as deposition potential (-0.4 to -0.8 V[SCE]) and pH (1.7 to 1.9). The influences of PH and deposition potential on the atomic composition of Cu, In, and Se in the deposited films were observed. The best chemical composition, approaching 1:1:2 atomic ratio for the elements, was achieved at -0.5 V (SCE) and pH 1.8. The as-deposited films showed low crystallinity and were annealed at 300 to $500^{\circ}C$ for 30 min to improve crystallization. The surface morphologies, microstructures, and crystallographic structures of the annealed films as well as the as-deposited films were analyzed with AFM, SEM, and XRD. The defects of spherical particles appeared on the surfaces of CIS thin films in the as-deposited state and decreased in size and number with increasing annealing temperatures. Additionally, the crystallization to chalcopyrite structure and surface roughness (Ra) of the as-deposited thin films were improved with the annealing process.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.149-151
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• 2006

Cu계 $I-III-VI_2$화합물은 직접천이형 반도체로 광흡수계수가 매우 높아 박막형 태양전지 제조에 매우 유리하다. 또한 화학적으로 안정하며 Ga, Al 등을 첨가하면 에너지 금지대폭을 조절할 수 있어 Wide Bandgap 태양전지 및 탠덤구조 태양전지를 제조하기에도 용이하다 $CulnSe_2(CIS)$ 물질에서 In을 20-30% 정도 치환한 $Cu(In,Ga)Se_2(CIGS)$ 태양전지의 경우 19.5%의 세계 최고 효율을 보고하고 있으며 이는 다결정 실리콘 태양전지의 효율과 비슷한 수준이다. 본 연구에서는 동시 진공증발법을 이용하여 증착한 CIGS 박막을 이용하여 태양전지를 제조하였다. 공정의 재현성 및 결정립계가 큰 광흡수층 제조를 위하여 실시간 기판온도 모니터링 시스템을 도입하였으며 버퍼충으로는 용액성장한 CdS 박막을 사용하였다. SLG/MO/CIGS(CGS)/CdS/ZnO/Al 구조의 태양전지를 제조하여 면적 $0.5cm^2$에서 각각 17.5%의 효율을 얻었다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.37.2-37.2
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• 2010

Electrostatic spray deposition is an innovative coating technique that produces fine, uniform, self-dispersive (due to the Coulombic repulsion), and highly wettable, atomized drops. Copper-indium salts are dissolved in an alcohol-based solvent, which is then electrostatically sprayed onto a moderately heated, molybdenum-coated substrate. Solvent flowrates range from 0.02 to 5 ml/hr under applied voltages of 1 to 20 kV yielding drop sizes around a few hundred nanometers. By comparing the scanning electron miscrscope images of coated samples, the substrate temperature, applied voltage, solvent flowrate, and nozzle-substrate distance are demonstrated to be the primary parameters controlling coating quality. Also, the most stable electrostatic spray mode that reliably produces uniform and fine drops is the cone-jet mode with a Taylor cone issuing from the nozzle.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.464-466
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• 2000

In the study We measured the MDC across lipidazobenzene monolayer system was the substrate. We discuss the cis-trans isomerization in Langmuir-Blodgett(LB) films and examine the relationship between the structure of mixed LB films and the generation of MDCs due to photoisomerization. As results, mixed induce monolayer of view to memory and switching, it's own function by particles level think. Also, transmission results of stimulus signal it's form by current to appear.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.306-308
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• 1997

The Maxwell displacement current was investigated in the connection with stwiching characteristics by photoisomerization of monolayers. The displacement current was generated due to the trans-to-cis photoisomerization by irradiation with ultraviolet light( λ$_1$1=360nm). whereas the displacement current was generated in the opposite direction due to the sis-to-trans photoisomerization by irradiation with visible light( λ$_1$=450nm). The reversible displacement current generation was found to be sustained by alternative irradiation with UV light and visible light.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.166-167
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• 2003

아조벤젠 그룹의 trans-cis-trans photo isomerization 특성에 의한 광배향 (photoinduced orientation) 성질을 이용하여 아조벤젠이 함유된 폴리머박막에 표면 부조 격자 (surface relief grating)를 만드는 것은 널리 알려져 있다. 특히 최근 들어, 비선형 물질의 주기적인 배열 구조를 만들기 위해서 surface relief grating을 corona poling 하는 방법들이 연구되어 지고 있다. poling된 surface relief grating은 poling 방향으로의 azo분자의 극질서가 유도되기 때문에, $C_{{\infty}v}$점대칭을 가지는 비등방 회절 격자(anisotropic grating)가 되며 2차 비선형 특성 중의 하나인 선형 전기 광학 효과를 나타낼 수 있다. (중략)

• Polymer(Korea)
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• v.38 no.6
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• pp.752-759
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• 2014

Crosslinked polyimides (PIs) were synthesized by reacting 4,4'-(hexafluoroisopropylidene)-diphthalic anhydride (6FDA) and 2,2'-bis(trifluoromethyl)benzidine (TFDB) with various ratios of the cross-linkable, end-capping agent cis-1,2,3,6-tetrahydrophthalic anhydride (CDBA) via ring-opening metathesis polymerization. Residual stress behaviors were investigated in-situ during thermal imidization of the crosslinked PI precursors using a thin film stress analyzer (TFSA) by wafer bending method. The thermal properties were investigated via differential scanning calorimetry (DSC), thermomechanical analysis (TMA), and thermogravimetric analysis (TGA). The optical properties were measured by ultraviolet-visible spectrophotometer (UV-vis) and spectrophotometry. All properties were interpreted with respect to their morphology of crosslinked networks. With increasing the amounts of the end-capping agent, the residual stress decreased from 27.9 to -1.3 MPa, exhibited ultra-low stress and high thermal properties. The minimized residual stress and enhanced thermal properties of the crosslinked PI makes them potential candidates for versatile high-density multi-layer structure applications.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1584-1586
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• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.