• Bulletin of the Korea Photovoltaic Society
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• v.3 no.1
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• pp.42-52
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• 2017

페로브스카이트 태양전지는 지난 5년간 광전변환효율이 약 10%에서 22%로 증가하는 급속한 발전으로 주목 받고 있으며, 현재 대면적 공정개발 및 안정성 향상 등의 상용화 기반기술에 대한 연구개발 역시 활발히 진행되고 있다. 이와 동시에, 페로브스카이트는 실리콘 태양전지(1.1eV), CIGS 태양전지(1.1~1.2 eV)와 비교하여 상대적으로 높은 밴드갭에너지(>1.5eV)를 가지고, 할라이드 물질 조성 제어를 통해 쉽게 밴드갭에너지를 조절할 수 있으며, 저온 용액 공정이 가능한 특성에 기인하여 페로브스카이트 태양전지를 상부셀로 이용한 탠덤 태양전지에 대한 다양한 시도가 이루어 지고 있다. 페로브스카이트의 흡광계수, 반사율 등 광학적 특성에서 기인하는 요소들을 고려하면 직렬 형태의 이중접합에서 최대 32%의 광전변환효율 얻을 수 있을 것으로 예측된다. 따라서 본 원고에서는 페로브스카이트, 실리콘 및 Cu(In, Ga) $(S,Se)_2$ (CIGS) 같은 다양한 태양전지와 함께 페로브스카이트 태양전지를 활용하는 탠덤태양전지의 현재 연구 동향을 논의하고자 한다.

• Bulletin of the Korea Photovoltaic Society
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• v.3 no.3
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• pp.18-31
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• 2017

박막 태양전지 기술은 현재 가장 큰 시장점유율을 보이고 있는 결정질 Si 태양전지의 차세대 후보로서 큰 관심을 받고 있다. 결정질 Si 태양전지보다 높은 효율로서, 저가로 생산할 수 있는 수준을 목표로 하여 $Cu(In,Ga)Se_2$ (CIGS) 를 비롯한 다양한 종류의 박막 태양전지들이 개발되고 있는데, 이 글에서는 최근에 범용성 초저가 박막 태양전지로 각광을 받고 있는 kesterite 박막 태양전지에 대해서 살펴보기로 한다. 가장 많이 연구되는 kesterite구조의 $Cu_2ZnSn(S,Se)_4$ (CZT(S,Se)) 박막 태양전지는 차세대 태양전지의 유력 후보군인 화합물태양전지 중에서 CdTe와 CIGS 그리고 새롭게 떠오르고 있는 페로브스카이트 등에 비해 범용 무독성 원소를 광흡수층으로 사용한다는 장점을 가지고 있지만 아직까지는 이들보다 효율이 낮아 상용화하기에는 좀 더 시간이 필요할 것으로 판단된다. CZT(S,Se)계 박막 태양전지의 기본적인 물성, 공정, 분석법 등을 알아보고 고효율을 달성하는 방법에 대하여 제시하고자 한다. 공정에 대한 상세한 최근 동향과 설명은 최근 한국공업화학회 소식지에 실린 강진규 박사의 리뷰논문을 참고하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.218-221
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• 2006

The photovoltaic properties of CIES cells on alumina substrate were improved by using the Na-doped Mo as theabotom layer of hilo back contact. Na was supplied to the CIGS bulk region from alumina/Na-doped Mo/Mo/alumina? structure, as same assimilar to the Na diffusion from soda-lime glass. The content diffusion of Na from Na-doped bfo was smaller more controlled than that from SLG. These Our results indicate that Na-doped bfo act as Na source material and contents of Na amount can be controlled without the use of an alkali barrier layer. The best CIGS solar cell with conversion efficiency of 13.34%, $J_{sc}=34.62mA/cm^2,\;V_{oc}=0.58V$ and FF=66% for an active area of $0.45cm^2$ on the alumina substrate was obtained in the condition of for 100nm Na-doped Mo/1000nm Mo.

• Current Photovoltaic Research
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• v.8 no.3
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• pp.102-106
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• 2020

In this paper, the effect of MoSe₂ on the contact resistance (R_C) of the transparent conducting oxide (TCO) and Mo junction in the scribed P2 region of the Cu(In,Ga)Se₂ (CIGS) solar module was analyzed. The CIGS/Mo junction becomes ohmic-contact by MoSe₂, so the formation of the MoSe₂ layer is essential. However, the CIGS solar module has a TCO/MoSe₂/Mo junction in the P2 region due to structural differences from the cell. The contact resistance (R_C) of the P2 region was calculated using the transmission line method, and MoSe₂ was confirmed to increase R_C of the TCO/Mo junction. B doped ZnO (BZO) was used as TCO, and when BZO/MoSe₂ junction was formed, conduction band offset (CBO) of 0.6 eV was generated due to the difference in their electron affinities. It is expected that this CBO acts as a carrier transport barrier that disturbs the flow of current, resulting in increased R_C. In order to reduce the R_C caused by CBO, MoSe₂ must be made thin in a CIGS solar module.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.115-119
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• 2014

$Cu(In,Ga)Se_2$ (CIGS) thin films have been used as a light absorbing layer in high-efficiency solar cells. In order to improve the quality of the CIGS thin film, often selenization step is applied. Especially when the thin film was formed by non-vacuum powder process, selenization can help to induce grain growth of powder and densification of the thin film. However, selenization is not trivial. It requires either the use of toxic gas, $H_2Se$, or expensive equipment which raises the overall manufacturing cost. Herein, we would like to deliver a new, simple method for selenization. In this method, instead of using a costly two-zone furnace, use of a regular tube furnace is required and selenium is supplied by a mixture of selenium and ceramic powder such as alumina. By adjusting the ratio of selenium vs. alumina powder, selenium vaporization can be carefully controlled. Under the optimized condition, steady supply of selenium vapor was possible which was evidently shown by large grain growth of CIGS within a thin powder layer.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.21-26
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• 2015

High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.4
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• pp.282-287
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• 2013

Hydrogen production from water using solar energy is attractive way to obtain clean energy resource. Among the various solar-to-hydrogen production techniques, a combination of a photovoltaic and an electrolytic cell is one of the most promising techniques in term of stability and efficiency. In this study, we show successful fabrication of precursor solution processed CIGS thin film solar cells which can generate high voltage. In addition, CIGS thin film solar cell modules producing over 2V of open circuit voltage were fabricated by connecting three single cells in series, which are applicable to water electrolysis. The operating current and voltage during water electrolysis was measured to be 4.23mA and 1.59V, respectively, and solar to hydrogen efficiency was estimated to be 3.9%.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1584-1586
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• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.376-376
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• 2011

I-III-VI2 chalcopyrite compounds, particularly copper, indium, gallium selenide(Cu(InxGa1-x)Se2, CIGS), are effective light-absorbing materials in thin-film solar application. They are direct band-gap semiconductors with correspondingly high optical absorption coefficients. Also they are stable under long-term excitation. CIS (CIGS) solar cell reached conversion efficiencies as high as 19.5%. Several methods to prepare CIS (CIGS) absorber films have been reported, such as co-evaporation, sputtering, selenization, and electrodeposition. Until now, co-evaporation is the most successful technique for the preparation of CIS (CIGS) in terms of solar efficiency, but it seems difficult to scale up. CIS solar cells have been hindered by high costs associated with a fabrication process. Therefore, inorganic colloidal ink suitable for a scalable coating process could be a key step in the development of low-cost solar cells. Here, we will present the preparation of CIS photo absorption layer by a solution process using novel metal precursors. Chalcopyrite copper indium diselenide (CuInSe2) nanocrystals ranging from 5 to 20nm in diameter were synthesized by arrested precipitation in solution. For the fabrication of CIS photo absorption layer, the CuInSe2 colloidal ink was prepared by dispersing in organic solvent and used to drop-casting on molybdenum substrate. We have characterized the nanoparticless and CIS layer by XRD, SEM, TEM, and ICP.