• Journal of Life Science
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• v.20 no.4
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• pp.584-588
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• 2010

Clusterin is an 80 kDa heterodimetric glycosylated protein which plays diverse biological roles in various tissues and organs. Clusterin is reported to be associated with the pathogenesis of coronary artery disease and atherosclerosis. Therefore, we investigated the genotype for the T

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.6
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• pp.63-69
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• 2008

Reconfigurable RF one-chip solutions have been researched with the objective of designing for smaller-sized and more economical RF transceiver and it can be applied to a vehicular wireless terminal. The proposed voltage-controlled oscillator satisfies the targeted frequency range ($4.2{\sim}5.4\;GHz$) and the frequency planning which correspond to the standards such as CDMA(IS-95), PCS, GSM850, EGSM, WCDMA, WLAN, Bluetooth, WiBro, S-DMB, DSRC, GPS, and DVB-H/DMB-H/L(L Band). In order to improve phase noise performance, PMOS is adopted in the cross-coupled pair, the tail current source and MOS varactor in this VCO and differential-typed switching is proposed in capacitor array. Based on the measurement results, a total power dissipation is $5.3{\sim}6.0\;mW$ at 1.8 V power supply voltage. The oscillator is tuned from 4.05 to 5.62 GHz; The tuning range is 33%. The phase noise is -117.16 dBc/Hz at 1 MHz offset frequency and the FOM (Figure Of Merit) is $-180.84{\sim}-180.5$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• Journal of Korea Multimedia Society
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• v.15 no.1
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• pp.32-39
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• 2012

In this paper, the implementation of location based services (LBS) using S-DMB (satellite-digital multimedia broadcasting) system was proposed. In S-DMB System, the frequency of transmitted signal is about 2 GHz which has a characteristics of strong straightness but weak diffraction so that there are many shade areas such as indoors and underground spaces. Therefore the signal transmitted from the satellite should be retransmitted by the earth repeaters called as gap filler. Because each gap filler has its own identification value, the gap filler ID introduces the area in which the gap filler was installed. Generally, the 51st data symbols of S-DMB pilot signal transmitted from the satellite are padded by dummy value and gap filler ID is embedded in this pilot symbol by the gap filler when S-DMB signals are retransmitted by gap fillers. So using gap filler ID of S-DMB system, LBS such as region registration, distance and time to destination, alarm of local area information could be implemented. In the experiment to prove the performance of the proposed LBS system using the gap filler ID of the S-DMB system, the firmware of S-DMB chip composing of RF and baseband parts was lightly modified so that application processor was able to manipulate the gap filler ID and the its related regional information.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.4
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• pp.391-395
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• 2012

We present a continuous cell separator that achieves density-dependent and size-independent cell separation based on the net force of gravity and buoyancy forces on the cells in dissimilar density fluids. Previous cell separators are, based on the size or dielectrophoretic property of the cells and, are suitable for size-dependent and density-independent cell separation. However, these properties can make it difficult to collect the same types of cells with the same density but with size variations. The present separator, however, is capable of collecting the same types of cells based on the cell density in the fluid. Regardless of cell size, the proposed chip isolates low density cells, (white blood cells, or WBCs) at the upper outlet while obtaining high-density cells (red blood cells, or RBCs) from the lower outlet based on density. Efficiency levels for separation of WBCs and RBCs were $90.9{\pm}9.1%$ and $86.4{\pm}1.99%$, respectively. The present separator therefore has the potential for use in the pretreatment of whole blood.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1055-1063
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• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.43-53
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• 2007

We have analyzed low current operation characteristics of a VCSEL transmitter operating at fixed Current over wide temperature range. Used 850 nm oxide VCSEL has low temperature dependence of the threshold current and $d^2I_{th}/dT^2$ is approximately $1.346\times10^{-4}mA/^{\circ}C^2$. We fixed on-current so that output power from the chip is 1 mW at $20^{\circ}C$ and investigated the turn-on, turn-off characteristics and eye-diagram of the 850 nm oxide VCSEL transmitter with varying ambient temperature and off-current. We measured rise time, fall time, extinction ratio and timing jitter by changing tile ambient temperature and off-current. With the fixed off-current of around $0.1\sim0.2mA$ lower than the lowest threshold current the transmitter successfully operated at 1.25 Gbps over a wide temperature range from $-20^{\circ}C$ to $80^{\circ}C$.

• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.214-220
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• 2013

Hydrophobic coating on a silicate-based yellow phosphor ($Sr_2SiO_4:Eu^{2+}$) was carried out by using hexamethyldisiloxane (HMDSO) precursor in an atmospheric pressure dielectric barrier discharge plasma reactor, eventually to improve the long-term stability and reliability of the phosphor. The phosphor powder samples were characterized by a scanning electron microscope (SEM), a transmission electron microscope (TEM), a fluorescence spectrophotometer and a contact angle analyzer. After the coating was prepared, the contact angle of the phosphor powder increased to $133.0^{\circ}$ for water and to $140.5^{\circ}$ for glycerol, indicating that a hydrophobic layer was formed on its surface. The phosphor coated with HMDSO exhibited photoluminescence enhancement up to 7.8%. The SEM and TEM images of the phosphor powder revealed that the plasma coating led to a morphological change from grain-like structure to smooth surface with 31~46 nm thick hydrophobic layer. The light emitting diode (3528 1 chip LED) fabricated with the coated phosphor showed a substantial enhancement in the reliability under a special test condition at $85^{\circ}C$ and 85% relative humidity for 1,000 h (85/85 testing). The plasma-mediated method proposed in this work may be applicable to the formation of 3-dimensional coating layer on irregular-shaped phosphor powder, thereby improving the reliability.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• Asian-Australasian Journal of Animal Sciences
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• v.31 no.6
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• pp.784-790
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• 2018

Objective: The genetic effects of an individual on the phenotypes of its social partners, such as its pen mates, are known as social genetic effects. This study aims to identify the candidate genes for social (pen-mates') average daily gain (ADG) in pigs by using the genome-wide association approach. Methods: Social ADG (sADG) was the average ADG of unrelated pen-mates (strangers). We used the phenotype data (16,802 records) after correcting for batch (week), sex, pen, number of strangers (1 to 7 pigs) in the pen, full-sib rate (0% to 80%) within pen, and age at the end of the test. A total of 1,041 pigs from Landrace breeds were genotyped using the Illumina PorcineSNP60 v2 BeadChip panel, which comprised 61,565 single nucleotide polymorphism (SNP) markers. After quality control, 909 individuals and 39,837 markers remained for sADG in genome-wide association study. Results: We detected five new SNPs, all on chromosome 6, which have not been associated with social ADG or other growth traits to date. One SNP was inside the prostaglandin $F2{\alpha}$ receptor (PTGFR) gene, another SNP was located 22 kb upstream of gene interferon-induced protein 44 (IFI44), and the last three SNPs were between 161 kb and 191 kb upstream of the EGF latrophilin and seven transmembrane domain-containing protein 1 (ELTD1) gene. PTGFR, IFI44, and ELTD1 were never associated with social interaction and social genetic effects in any of the previous studies. Conclusion: The identification of several genomic regions, and candidate genes associated with social genetic effects reported here, could contribute to a better understanding of the genetic basis of interaction traits for ADG. In conclusion, we suggest that the PTGFR, IFI44, and ELTD1 may be used as a molecular marker for sADG, although their functional effect was not defined yet. Thus, it will be of interest to execute association studies in those genes.