• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.334-341
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• 2011

The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.659-662
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• 2007

The characteristics of a $SiN_x$ passivation layer grown by a specially designed catalyzer enhanced chemical vapor deposition (CECVD) system and electrical and optical properties of OLEDs passivated with the $SiN_x$ layer are described. Despite the low substrate temperature, the single $SiN_x$ passivation layer, grown on the PC substrate, exhibited a low water vapor transmission rate of $2{\sim}6{\times}10^{-2}\;g/m^2/day$ and a high transmittance of 87 %. In addition, current-voltage-luminescence results of an OLED passivated with a 150 nm-thick $SiN_x$ film compared to nonpassivated sample were identical indicating that the performance of an OLED is not critically affected by radiation from tungsten catalyzer during the $SiN_x$ deposition.