• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.607-608
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• 2005

In this paper, author describe the undoped and $Co^{2+}$(0.5mole%) doped $Cd_4SnSe_6$ single crystals were grown by the chemical transport reaction(CTR) method. The grown single crystals crystallize in the monoclinic structure of space group Cc and have the direct band gap structure. The energy gaps of them are 1.68 eV for $Cd_4SnSe_6$ and 1.50 eV for $Cd_4SnSe_6:Co^{2+}$ at 300K respectively.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.300-304
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• 2001

Effect of Cd addition on the fatigue properties of Al-Cu-Mn cast alloy was investigated by low and high cycle fatigue tests. With increasing Cd content, fatigue life and tensile strength were increased. It was found that the fatigue strength was 115MPa and the fatigue ratio was 0.31. Metallographic observation revealed that the fatigue crack initiated at the surface and propagated along the grain boundary. This propagation path was attributed to the presence of PFZ along the grain boundary. The tensile strength increased from 330MPa in the Cd-free Al-Cu- Mn cast alloy to 401MPa in the 0.15%Cd-containing alloy.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.382-387
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• 2000

The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$single crystals were crystallized into a defect chalcopyrite structure. The optical energy gap of the $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals was found to be 3.377 eV and 2.924 eV, respectively, at 300 K. Blue emission with peaks in 456nm~466nm at 280K was observed in the $CdAl_2S_4$ single crystal. Optical absorption and emission peaks due to impurities in the $CdAl_2S_4 Co^{2+}$ single crystal were observed and described as originating from the electron transition between energy levels of the $Co^{2+} ion sited at the Td symmetry point.

• Journal of the Korean Chemical Society
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• v.48 no.3
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• pp.249-253
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• 2004

CdS semiconductor quantum dot (QD) structures in aqueous solution are fabricated by using a gamma-ray irradiation technique and their optical absorption spectra are investigated. Cadmium sulfate solution, 2-mercaptoethanol solution, and reducing agent $e^{-}_{aq}$ are employed to produce CdS molecules, leading to CdS quantum dots. The measured linear absorption spectra before and after g-ray irradiation clearly show exciton peaks between 300 nm and 400 nm, which indicate the formation of CdS QD's. It is also observed that the exciton peaks are red-shifted with increasing the g-ray irradiation time from 5 min to 15 min. Therefore, it is concluded that the mean QD sizes can be systematically controlled with the dosage of the g-ray irradiation.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 1999.10a
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• pp.299-300
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• 1999

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.78-86
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• 1995

Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.

• Journal of the Korean Society of Food Science and Nutrition
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• v.23 no.5
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• pp.725-730
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• 1994

This study was conducted to investigate the effect of dietary zinc (Zn) and/or cadmium (Cd) on hepatic microsomal and cytosol enzyme activities. Male Spraque-Dawley rats (110$\pm$10g ) received zinc (0, 30 and 300 ppm/) and Cd-treated groups were administered oral intubation with Cd chloride (5.0mg/kg of body weight 0 at the same time once a week. The effect of Cd on the activity of hepatic cytochromep-450 , xanthine oxidase(X. O) and superoxide dismutase (SOd) was studied in rats. Cd oral intubation resulted in a decrease in cytochrome P-450 content and SOD activity whereas a significant increase in the X.O. activity was observed was observed . Intake of excessive Zn led to an increased activity of microsomal alcohol dehydrogenase (ADH) , whereas Zn deficiency group led to a decreased group. The mechanism by which Zn induces the decreasing of Cd toxicity in rats, seems to rely on the protection of the enzyme systems P-450, ADH, aldehyde dehydrogenase (ALDH) and X.O. in the liver, possibly by forming non-toxic Cd metallothionein. These results indicate that Zn and Cd regulation might occur via inhibitory protein component of the $H_2O$$_2$ -generator system.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.666-672
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• 1996

The optical property of CdTe thin film is important for applications such as the compound semiconductor type solar cells. CdTe films are prepared by RF sputtering at various substrate temperature between $25^{\circ}C$ and $300^{\circ}C$, then, annealed in argon gas environment at $400^{\circ}C$. The annealing process of the thin film caused variation in the film structure and the composition of films. The deformation of CdTe thin film was observed by X-ray diffractometry. After annealing, the grain size increased and the portion of the non-crystalline CdTe reduced. Futhermore, the structure of sputtered CdTe film grown at the substrate temperature more than $250^{\circ}C$ was enhanced in the (111) direction of zincblend structure. There was a discrepancy, in the spectroscopic ellipsometer spectrum, between the single crystal CdTe and the sputtered CdTe thin films, especially in the region over 3.2eV. An oxidation layer was found on the CdTe thin film by spectroscopic ellipsometry analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.228-228
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• 2008

CdS is II-VI semiconductor with a wide band gap of approximately 2.42 eV. CdS is the most popularly employed heterojunction partner to p-CdTe due to its similar chemical properties. In this work, to improvement of the surface properties of the CdS films, PET substrate is treated by high density $O_2$ plasma. CdS films are prepared by chemical bath deposition(CBD) method. In case of the PET substrate with plasma treatment for 2min, the crystalline orientation of CdS films exhibits a strong hexagonal(002). Grain size was increased from 300nm without $O_2$ plasma treatment to 380nm with an $O_2$ plasma treatment.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1323-1324
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• 2007

전기방사법을 이용하여 PVK-CdTe 용액으로 하이브리드 나노파이버를 제조하였다. 하이브리드 나노파이버 형상은 광학현미경과 Scanning Electron Microscope으로 관찰되었으며, 직경은 $300nm\;{\sim}\;30{\mu}m$이고, 길이는 $500\;{\mu}m$이상 이였다. PVK-CdTe 하이브리드 나노파이버의 Photoluminescence 측정을 통하여 하이브리드 나노파이버내에 나노입자특성을 유지한 CdTe 나노입자의 존재를 확인하였으며, 대기와 진공 중에서의 I-V 측정을 통해 진공 상태에서보다 대기상태에서 약 2배 정도 전류가 증가한다는 것을 알았다.