• IMMUNE NETWORK
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• v.11 no.1
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• pp.50-58
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• 2011

Background: Epstein-Barr virus associated gastric lymphoepithelioma-like carcinoma (LELC) is characterized by the intensive infiltration of lymphoid cells, the presence of EBV, and the better prognosis over typical adenocarcinoma. Thus, it was assumable that viral latent proteins may be responsible for the recruitment of a certain T cell repertoire to EBV-associated gastric carcinoma. Methods: To examine above possibility, EBV gene expression in gastric carcinoma tissues and usage of TCR among the tumor infiltrating lymphocytes were analyzed. Results: EBV specific DNA and EBERs RNA were detected in 4 out of 30 patients. RT-PCR analysis revealed that all 4 of EBV-positive tumor tissues expressed EBNA1 mRNA and BARTs and LMP2a was detected only one sample out of 4. However, the EBNA2 and LMP-1 transcripts were not detected in these tissues. $CD8^+$ T cells were the predominant population of infiltrating lymphocytes in the EBV-positive gastric carcinoma. According to spectra type analysis of infiltrating T cells, 10 predominant bands were detected by TCR $V{\beta}$ CDR3 specific RT-PCR from 4 EBV-positive tumor tissues. Sequence analysis of these bands revealed oligoclonal expansion of T cells. Conclusion: These findings suggest that clonally expanded T cells in vivo might be a population of cytotoxic T cells reactive to EBV-associated gastric carcinoma.

• Bulletin of the Korean Chemical Society
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• v.33 no.11
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• pp.3645-3650
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• 2012

Two new blue emitting cationic iridium(III) complexes with two substituted 2-phenlypyridine ligands as main ligands and one 2,2'-biimidazole as an ancillary ligand, $[(L1)_2Ir(biim)]Cl$ (1) and $[(L2)_2Ir(biim)]Cl$ (2), where L1 = 2-(2',4'-difluorophenyl)-4-methylpyridine, L2 = 2-(2',4'-difluoro-3'-trifluoromethylphenyl)-4-methylpyridine and biim = 2,2'-biimidazole, were synthesized for applications in phosphorescent organic light-emitting diodes (PhOLEDs). Their photophysical, electrochemical and electroluminescent (EL) device performances were examined. The photoluminescent (PL) spectra revealed blue phosphorescence in the 450 to 485 nm range with a quantum yield of more than 10%. The iridium(III) compounds studied showed good solubility in organic solvents with no solvatochromism dependent on the solvent polarity. The solution-processed OLEDs were prepared with the configuration, ITO/PEDOT:PSS (40 nm)/mCP:Ir(III) (70 nm)/OXD-7 (20 nm)/LiF (1 nm)/Al (100 nm), by spin coating the emitting layer containing the mCP host doped with the iridium phosphors. The best performance of the fabricated OLEDs based on compound 1 showed an external quantum efficiency of 4.5%, luminance efficiency of 8.52 cd $A^{-1}$ and blue emission with the CIE coordinates (x,y) of (0.16, 0.33).

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2955-2960
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• 2010

Spiro-type orange phosphorescent host materials, 9-diphenylphosphine oxide-spiro[fluorene-7,9'-benzofluorene] (OPH-1P) and 5-diphenylphosphine oxide-spiro[fluorene-7,9'-benzofluorene] (OPH-2P) were successfully prepared by a lithiation reaction followed by a phosphination reaction with diphenylphosphinic chloride. The EL characteristics of OPH-1P and OPH-2P as orange host materials doped with iridium(III) bis(2-phenylquinoline)acetylacetonate ($Ir(pq)_2acac$) were evaluated. The electroluminescence spectra of the ITO (150 nm)/DNTPD (60 nm)/NPB (30 nm)/OPH-1P or OPH-2P: $Ir(pq)_2acac$ (30 nm)/BCP (5 nm)/$Alq_3$ (20 nm)/LiF (1 nm)/Al (200 nm) devices show a narrow emission band with a full width at half maximum of 75 nm and $\lambda_{max}$ = 596 nm. The device obtained from OPH-1P doped with 3% $Ir(pq)_2acac$ showed an orange color purity of (0.580, 0.385) and an efficiency of (14 cd/A at 7.0 V). The ability of the OPH-P series to combine a high triple energy with a low operating voltage is attributed to the inductive effect of the P=O moieties and subsequent energy lowering of the LUMO, resulting in the enhancement of both the electron injection and transport in the device. The overall result is a device with an EQE > 8% at high brightness, but operating voltage of less than 6.4 V, as compared to the literature voltages of ~10 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.102-107
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• 2003

This study puts focus on the optimization of growth temperature of CIGS absorber layer which affects severely the performance of solar cells. The CIGS absorber layers were prepared by three-stage co-evaporation of metal elements in the order of In-Ga-Se. The effect of the growth temperature of 1st stage was found not to be so important, and 350$^{\circ}C$ to be the lowest optimum temperature. In the case of growth temperature at 2nd/3rd stage, the optimum temperature was revealed to be 550$^{\circ}C$. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173cm$\^$-1/. Scanning electron microscopy results revealed very small grains at 2nd/3rd stage growth temperature of 480$^{\circ}C$. At higher temperatures, the grain size increased together with a reduction in the number of the voids. The optimization of experimental parameters above mentioned, through the repeated fabrication and characterization of unit layers and devices, led to the highest conversion efficiency of 15.4% from CIGS-based thin film solar cell with a structure of Al/ZnO/CdS/CIGS/Mo/glass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.435-440
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• 2002

In this study, we have investigated photo-induced changes of optical energy gap( $E_{OP)}$ and photoluminescence (PL) in amorphous ($\alpha$-) S $e_{100-x}$G $e_{x}$ (x=5, 25 and 33) thin films prepared by conventional thermal evaporation method. In the $\alpha$-S $e_{100-x}$G $e_{x}$ thin film, the $E_{OP}$ is obtained by a linear extrapolation of the ($\alpha$hν)$^{\frac{1}{2}}$ versus hν plot to the energy axis using the optical absorption coefficient ($\alpha$) calculated from the extinction coefficient k measured in the wavelength range of 290~900nm. Although the values of $\Delta$ $E_{OP}$ are very different, all films exhibit photo-induced photo-darkening (PD) effect that is a red shift of $E_{OP}$ . In particular, $\Delta$ $E_{OP}$ in $\alpha$-S $e_{75}$ G $e_{25}$ thin film exhibits the largest value (i, e., $\Delta$ $E^{OP}$ ~40meV for $\alpha$-S $e_{95}$ G $e_{5}$ , $\Delta$ $E_{OP}$ ~200meV for $\alpha$-S $e_{75}$ G $e_{25}$ , $\Delta$ $E_{OP}$ ~130meV for $\alpha$-S $e_{67}$ G $e_{33}$ ). PL spectra in $\alpha$-SeGe by hν$_{HeCd}$ have no-Stokes shift (SS) and show a tendency dependent on both composition and illumination time. We explain the energy-induced phenomena such as the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..tc..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.831-836
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• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.449-449
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• 2010

유기발광소자(organic light-emitting diodes, OLEDs)는 저공정비용, 경량화, 가용성 및 대면적화 등의 장점으로 조명 분야와 디스플레이 분야로의 응용 가능성으로 인해 크게 주목을 받아 왔다. 이러한 OLED 소자의 고효율, 고휘도 및 저소비전력 등을 구현하기 위해서는 전극으로부터 전하 주입 층으로 효율적인 전하 주입이 요구된다. 즉, 각 전극의 폐르미 준위로부터 전하 전도준위대로의 전하주입 장벽이 없어야 한다. 본 연구에서는 홀 주입장벽이 없는 정공주입 층으로 $MoO_x$(molybdenum oxide)가 도핑된 NPB(N, N'-diphenyl-N, N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) 층을 사용하여 hole-only 소자를 제작하고 전류-전압 특성을 통해 양극으로부터 홀주입 층으로의 hole-ohmic 특성을 고찰했다. 또한, 전자 주입장벽이 없는 전자주입 층으로 $C_{60}$(fullerene)/LiF(lithum fluoride)의 이종 층을 사용하여 electron-only 소자를 제작하고 음극으로부터 전자주입 층으로의 전자 ohmic 특성을 조사했다. 또한, 전극으로부터 전하주입 층으로 ohmic 특성을 더 자세히 이해하기 위하여 전하주입 층의 자외선 광방출 스펙트럼(ultraviolet photoemission spectra)을 조사했다. 한편, glass/ITO/$MoO_x$-doped NPB (x%: x=0,25, 50 및 75; 5nm)/NPB (63nm)/$Alq_3$ (37nm)/$C_{60}$ (5nm)/LiF (1nm)/Al (100nm)로 구성된 all-ohmic OLED 소자의 발광특성은 $MoO_x$의 도핑 농도가 25%이상일 때 최적의 특성을 보여줬다. 이러한 현상은 정공주입 층에서 p형 도핑 농도의 증가에 따른 정공 농도의 증가에 기인한다. 또한 $MoO_x$의 도핑 농도의 증가에 따라 정공주입 층의 new gap state와 전극의 페르미 준위의 pinning에 기인한다. 25%의 $MoO_x$을 가진 OLED소자는 7.2V의 낮은 전압에서 $58300 cd/m^2$의 높은 휘도를 보여줬다.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.18 no.1
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• pp.99-132
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• 1992

Polypeptide has been used broadly as an active ingredient in cosmetics We thought it is very important to investigate the adsorption behavior of polypeptide in order to pre-estimate the effect of these polypeptides. For the study of polypeptide adsorption, we have investigated complex formation of basic homopolypeptides, poly(L-proline) Form I [PLP(I)], Form II [PLP(II)] and poly(4-hydroxy-L-proline) (PHLP) with acidic homopolypeptides, poly(L-glutamic acid) (PLGA), poly(D-glutamic acid) (PDGA) and poly(L-aspartic acid) (PLAA) through hydrogen bonding in a hydroalcoholic medium with viscometer, 1ight scatter, pH meter and circular dicroism (CD). The polypeptides used in this study have helical structure in some conditions. The result exhibited that al 1 the complexes were formed as the composition of basic/acidic homopolypeptide : L:2 irrespective of the complex systems used. A more favorable complex is formed in the PLP(II)-PLGA system than PHLP-PLGA because PLP(II) has a more flexible helical conformation, whereas PHLP has a more rigid helical conformation. The right-handed helix PLGA formed the complex favorably and quickly with the left-handed helix PLP(II), whereas the left-handed helix PDGA formed the complex favorably with the right-handed helix PLP(I). The effect of side chain of the acidic homopolypeptides on the complexation was also studied. The result showed that more favorable condition for the complexation was PLGA-PLP(II) system which has longer side chain at acidic homopolypeptide than PLAA - PLP(II). All the above facts were well supported by CD measurement for the complex systems. By the CD spectra for the complexes we could deduce the conformational change of each homopolypeptide in the complexes On the basis of the above results, we performed the adsorption test of PLP(I, II) and PHLP on the hair having a left-handed helix. The adsorption amount of each polypeptide was analyzed by HPLC. The result showed that PLP(I) was adsorbed more than PLP(II), PLP(II) was adsorbed more than PHLP on the hair. On adsorbing polypeptides having a helical structure on the hair through hydrogen bonding, it could be concluded that the helical polypeptides having the opposite directional structure to the hair are adsorbed more than those having the same directional structure with the hair and also the polypeptides having a flexible conformation are adsorbed more than those having a rigid conformation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.252-259
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• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.