• Korean Journal of Optics and Photonics
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• v.3 no.1
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• pp.55-62
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• 1992

The optical absorption characteristics of glasses colored by CdS. CdSe, $CdS_{1-x}Se_x$,ZnS, and ZnSe microcrystallites have been studied with emphasis on changes of the cut-off wavelength. The sharpcut filters with various cut-off wavelengths were fabricated by controlling the composition and the heat-treatment temperature. The cut-off wavelength shifts due to the different heat-treatment temperatures for CdS. CdSe, ZnS, and ZnSe doped SK-16 glasses were found to be relatively small(~30 nm). However, by treating the CdS1,Se, doped SK-16 glasses with different x values at the same heattreatment temperature, it was possible to obtain the filters with various cut-off wavelengths(~130 nm) without losing the high extinction coefficients of the filters. The filter glasses with various cut-off wavelngths(~100 nm) and high extinction coefficiencts were also produced by treating the CdSe and $CdS_{0.5}Se_{0.5}$ doped ZK-1 glasses at different temperatures.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.316-321
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• 2016

To study emission characteristics for dual-emission tandem organic light emitting display (OLED), we fabricated blue fluorescent OLED according to thickness variation of $MoO_x$ as charge generation layer and Al as cathode. The bottom emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness showed threshold voltage of 9, 7, 9 V, maximum current emission efficiency of 19.32, 23.18, 15.44 cd/A and luminance of $1,000cd/m^2$ at applied voltage of 17.6, 13.2, 16.5 V, respectively. The top emission characteristics of OLED with $MoO_x$ 2, 3, 5 nm thickness indicated threshold voltage of 13, 10, 13 V, maximum current emission efficiency of 0.17, 0.23, 0.16 cd/A and luminance of $50cd/m^2$ at applied voltage of 22.6, 16.5, 20.1 V, respectively. In case of thicker or thinner than $MoO_x$ of 3 nm, the emission characteristics were decreased because of mismatching of electron and hole in emission layer. The bottom emission characteristics of OLED with Al 15, 20, 25 nm thickness showed threshold voltage of 8, 8, 7 V, maximum current emission efficiency of 18.42, 22.98, 23.18 cd/A and luminance of $1000cd/m^2$ at applied voltage of 16.2, 13.9, 13.2 V, respectively. The reduction of threshold voltage and increase of maximum current emission efficiency are caused by the increase of current injection according to increase of Al cathode thickness. The top emission characteristics of OLED with Al 15, 20, 25 nm thickness indicated threshold voltage of 7, 7, 8 V, maximum emission luminance of 371, 211, $170cd/m^2$, respectively. The top emission OLED of Al cathode with 15 nm thickness showed maximum luminance and it decreased at thickness of 20 nm. These phenomena are caused by the decrease of intensity of emitted light by reduction of optical transmittance according to increase of Al cathode thickness.

• Journal of Genetic Medicine
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• v.19 no.2
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• pp.85-93
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• 2022

Purpose: Cornelia de Lange syndrome (CdLS) is a rare genetically heterogeneous disorder caused by genetic variants of the cohesin complex. However, the diverse genetic etiologies and their phenotypic correlations in Korean patients with CdLS are still largely unknown. Hence, this study aimed to clarify the clinical characteristics and genetic background of Korean patients with CdLS. Materials and Methods: The medical records of 15 unrelated patients (3 males and 12 females) genetically confirmed to have CdLS were retrospectively reviewed. All individuals were diagnosed with CdLS using target gene analysis, whole-exome sequencing, and/or chromosomal microarray analysis. The clinical score (CS) was calculated to assess disease severity. Results: The median age at diagnosis was 1.7 (range, 0.0-11.8) years, and median follow-up duration was 3.8 (range, 0.4-11.7) years. Eight (53.3%) patients showed classic phenotypes of CdLS, two (13.3%) showed non-classic phenotypes, and five (33.3%) had other phenotypes sharing limited signs of CdLS. Fifteen causative variants were identified: NIPBL in five (33.3%, including 3 males), SMC1A in three (20.0%), SMC3 in three (20.0%), and HDAC8 in four (26.7%) patients. The CS was significantly higher in the NIPBL group than in the non-NIPBL group (14.2±1.3 vs. 8.7±2.9, P<0.001). Conclusion: We identified the clinical and genetic heterogeneity of CdLS in Korean patients. Patients with variants of NIPBL had a more distinctive phenotype than those carrying variants of other cohesin complex genes (SMC1A, SMC3, and HDAC8). However, further studies are warranted to understand the pathogenesis of CdLS as a cohesinopathy and its genotype-phenotype correlations.

• Solar Energy
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• v.11 no.3
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• pp.74-83
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• 1991

In this study, the (p)ZnTe/(n)Si solar cell and (n)CdS-(p)ZnTe/(n)Si poly-junction thin film are fabricated by vaccum deposition method at the substrate temperature of $200{\pm}1^{\circ}C$ and then their electrical properties are investigated and compared each other. The test results from the (p)ZnTe/(n)Si solar cell the (n)CdS-(p)ZnTe/(n)Si poly-junction thin fiim under the irradiation of solar energy $100[mW/cm^2]$ are as follows; Short circuit current$[mA/cm^2]$ (p)ZnTe/(n)Si:28 (n)CdS-(p)ZnTe/(n)Si:6.5 Open circuit voltage[mV] (p)ZnTe/(n)Si:450 (n)CdS-(p)ZnTe/(n)Si:250 Fill factor (p)ZnTe/(n)Si:0.65 (n)CdS-(p)ZnTe/(n)Si:0.27 Efficiency[%] (p)ZnTe/(n)Si:8.19 (n)CdS-(p)ZnTe/(n)Si:2.3 The thin film characteristics can be improved by annealing. But the (p)ZnTe/(n)Si solar cell are deteriorated at temperatures above $470^{\circ}C$ for annealing time longer than 15[min] and the (n)CdS-(p)ZnTe/(n)Si thin film are deteriorated at temperature about $580^{\circ}C$ for longer than 15[min]. It is found that the sheet resistance decreases with the increase of annealing temperature.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.348-353
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• 1996

Rapid thermal annealing (RTA) was applied to polycrystalline CdTe thin films evaporated on CdS/ITO/glass substrate and the effect of the annealing temperatures and the atmosphere on physical properties of polycrystalline CdTe thin films and CdTe/CdS solar cell characteristics were studied. Results obtained by EDX showed that the bulk composition of CdTe remained stoichiometric after annealing at $550^{\circ}C$ in the air but the surface composition became Cd-rich. Cross-sectional TEM and micro EDX showed that columnar grains and micro-twins remained even after RTA, however, and the sulfur content in the annealed CdTe (added by sulfur diffusion from CdS during the annealing) was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at $550^{\circ}C$ in air showed the best solar energy conversion efficiency.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1178-1180
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• 1995

In this paper, structual, optical and electrical properties of CdTe thin films prepared by electron beam evaporation method were studied. The crystal structure of CdTe films deposited at substrate temperature of $100{\sim}400^{\circ}C$ was zincblend type with preferential orientation of the (111)plane parallel to the substrate. The result of optical absoption and transmittance show that solar radiation with energy larger than band gap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and optical band gap of the CdTe film was larger with increasing substrate temperature. The resistivity of CdTe films deposited on the glass substrate was about $10^5{\sim}10^7{\Omega}cm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.845-848
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• 2002

The study of photoconductor materials is demanded for development for flat-panel digital x-ray Imager. In this paper, We investigated the feasibility of application as x-ray image sensor using Cd(Zn)Te compound with high stopping power on high radiation. These Cd(Zn)Te samples were fabricated by vacuum thermal evaporation method to large area deposition and investigated I-V measurement as applied voltage. The experimental results show that the additional injection Zn in CdTe film reduced the leakage current, for the $Cd_{0.85}Zn_{0.15}Te$ detector, the net charge had the highest value as $144.58pC/cm^2$ at 30 V.

• Food Science and Biotechnology
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• v.18 no.1
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• pp.185-189
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• 2009

Microencapsulation of flavor was carried out by molecular inclusion process using $\beta$-cyclodextrin (${\beta}CD$). ${\beta}CD$-flavor complex was prepared at various flavor-to-${\beta}CD$ ratios (1:6-1:12) to determine the effect of ${\beta}CD$ concentration on the inclusion efficiency. Maximum total oil retention and minimal surface oil content were obtained at flavors to ${\beta}CD$ ratio of 1:10. The physical properties and controlled release pattern of flavors from ${\beta}CD$-flavor complex were measured and compared with spray-dried microcapsules prepared using carbohydrate wall system. ${\beta}CD$-flavor complex showed higher total oil retention and surface oil contents, smaller mean particle size, lower moisture uptake, and higher oxidation stability than spray-dried microcapsule. Oxidative stability of flavor was correlated with hygroscopicity of wall materials. The controlled release mechanism was highly affected by temperature and characteristics of wall materials.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.2
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• pp.148-159
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• 1987

This paper proposes CSMA/CD-TDM/SD(carrier sense multiple access/collision detection-time division multiplexing/silence detection) control scheme in bus type integrated data/voice local area networks. Simulation results show that this control scheme satisfies the lossless real-time constraints of the voice traffic and improves the data throughput-delay characteristics as compared to those of the CSMA/CD/MPD and the CSMA/CD-TDMA.

• Journal of the Korea Safety Management & Science
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• v.4 no.2
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• pp.199-207
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• 2002

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for $Cu_2$S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 50$0^{\circ}C$ for 15 second and annealed at 35$0^{\circ}C$ for 20 minute or 50$0^{\circ}C$ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of $Cu_2$S/CdS heterojunction, the open circuit voltage, $V_{oc}$ was 0.7 V and the short circuit current, $I_{sc}$ was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.