• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1565-1573
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• 2001

In order to resolve problems according to the phase error in QPSK demodulator in the digital satellite broadcasting, the demodulator requires carrier recovery loop which searches for the frequency and phase of the carrier. In this paper the drawback of NCO of the conventional carrier recovery loop is to wastes a amount of power for the structure of Look-up table , we designed the structure of combinational logic without the Look-up table. In the comparison with dynamic power of the proposed NCO, the power of NCO with the Look-up table is 175[${\mu}$W], NCO with the proposed structure is 24.65[${\mu}$W]. As the result, it is recognized that loss power is reduced about one eighth. In the simulation of carrier recovery loop designed QPSK demodulator, it is known that the carrier phase is compensated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.295-302
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• 2014

OFDM technique uses multiple sub-carriers for the data transmission. Therefore, inter carrier interference is generated because of nonlinear high power amplifier and carrier frequency offset. Wireless OFDM transmission over Doppler fading channels also causes inter carrier interference. The interference increases the bit error rate in receiver. Sub-carrier allocation methods in LTE and WiMAX standards are different. The performance of OFDM systems using different sub-carrier allocation, gauged by the bit error rate, is analyzed considering the nonlinear high power amplifier, carrier frequency offset and Doppler fading channels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.215-219
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• 2004

This paper is investigated about the effect of carrier gas and humidity for generating hydrogen gas. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with no humidity and humidity 45[%], the generation of hydrogen gas is decreased with increasing the humidity. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small particle produced from humidifier.

• Current Optics and Photonics
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• v.3 no.2
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• pp.164-171
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• 2019

Photoluminescence (PL) properties of GaN-based light-emitting diodes (LEDs) were analyzed to study the effects of carrier leakage on the luminescence properties at room temperature. The electrical leakage and PL properties were compared for LEDs showing leakages at forward bias and an LED with an intentional leakage path formed by connecting a parallel resistance of various values. The leakages at the forward bias, which could be observed from the current-voltage characteristics, resulted in an increase in the excitation laser power density for the maximum PL efficiency (ratio of PL intensity to excitation power) as well as a reduction in the PL intensity. The effect of carrier leakages on PL properties was similar to the change in PL properties owing to a reduction of the photovoltage by a reverse current since the direction of the carrier movement under photoexcitation is identical to that of the reverse current. Valid relations between PL properties and electrical properties were observed as the PL properties deteriorated with an increase in the carrier leakage. The results imply that the PL properties of LED chips can be an indicator of the electrical properties of LEDs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.9
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• pp.974-982
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• 2009

Photomixing techniques beating two optical signals with different wavelengths and strong correlations are also very useful techniques to make a continuous wave(CW) signals in the range of millimeter(mm) and terahertz(THz) frequencies. An optical double sideband-suppressed carrier(DSB-SC) technique is one of the popular techniques to generate two optical signals with different wavelengths and strong correlations. DSB-SC signals with strong correlations are generated by a CW modulation of an optical carrier with a local oscillator and an optical modulator. In the previous parers related the DSB-SC for producing the CW signals within the range of mm and THz frequencies, there have been no reports why the optical carrier should suppress. In order to clear that, we have analyzed and measured the characteristics of the mm-wave CW signals made by the DSB-SC photomixing in this paper. From our analysis and measurement results, compared with the case of the DSB with the maximized optical carrier, the power and phase noise have improved about 23.9 dB and 21 dBc/Hz(@ 1 MHz offset frequency) in the case of the DSB with the minimized optical carrier (that is to say, the DSB-SC). Consequently, it is evident reason that the optical carrier should sufficiently suppress to obtain the mm-wave CW signals with the high power and low noise. This paper has given very helpful data to make mm- and THz-wave CW signals using photomixing techniques with the DSB-SC because the reason why the optical carrier should be suppressed is reported in this paper based on the numerical and experimental results.

• Journal of Broadcast Engineering
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• v.16 no.1
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• pp.96-107
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• 2011

Recently, studies of 3D HDTV broadcasting technology have been processed actively. Korea is making efforts to modify Advanced Television Systems Committee (ATSC) 8-Vestigial Side Band (8-VSB) systems for terrestrial 3D HDTV broadcasting services. We intend to adopt a new frame structure to use PN (Pseudo-Noise) sequence as frame header, and VSB modulation. PN sequence is used to recover carrier freqeuncy offset, carrier phase error. In this paper, we will describe this system as the modified ATSC systems. The receiver of the modified ATSC system should be able to estimate and recover carrier frequency offset exactly. A existing ATSC systems inserts pilot to recover carrier frequency offset, on the other hand the modified ATSC systems use PN sequence to recovery carrier frequency offset without the use of pilot. In this paper, we introduce carrier frequency recovery (CFR) scheme for the modified ATSC systems. The proposed CFR scheme is composed of coarse CFR scheme using Fitz algorithm and fine CFR scheme using a simple PN sequence correlation algorithm. And, the symbol information of QAM modulated signal is contained in both In-phase (I)channel and Quadrature-phase (Q)channel. However the symbol information of VSB modulated signal is contained in I channel, and Q channel is just Hilbert transform of I channel. For the reason, VSB modulated symbols can not have fixed phase like QAM modulated symbols, and VSB modulated symbols is more sensitive to carrier frequency offset. Therefore we perform phase correction of received PN sequence to improve performance.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.197-206
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• 2000

The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,1-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.

• Journal of the Ergonomics Society of Korea
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• v.31 no.2
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• pp.379-388
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• 2012

Objective: This study developed a new shower carrier prototype to reduce caregivers' muscle burden and to increase use convenience by reflecting the needs of domestic long-term care institutions. Background: In the long-term care institutions, one of the ADL(Activities of Daily Life) factors is bathing/showering. Recently, bath/shower-assisting equipment is actively being introduced in care institutions to reduce the caregivers' care cost, but most of the domestic equipment was designed to imitate foreign products and rarely reflected the needs of care institutions. Method: Based on Korean elderly people's body information, the bed size(length: 1,900mm, width: 650mm) was set-up, and a variable headrest with a newly designed headform was developed to provide the comfort for the elderly and convenience for caregivers. To reduce caregivers' muscle burden on transferring and showering activities, a 3-step column lifting module equipped with dual actuators(lowest/highest levels from the ground: 600/1,100mm, Stroke: 500mm) was developed, and the wheelbase parameter(length: 1,250mm, width: 580mm) was defined securing the turn-over safety of the shower carrier. The drivability tests were performed for the prototype and foreign product, and the male and female subject's muscle activities were measured through the tests. Results: The structural stability of the shower carrier prototype was secured by finite element analysis, and the muscle activities of the subjects through the drivability tests largely decreased in the prototype, compared to the foreign product. Conclusion: In this study, a new shower carrier prototype was developed to possibly reduce caregivers' muscle burden and to increase use convenience based on the needs of long-term care institutions. It was expected that the drivability performance of the prototype could be relatively superior to that of the foreign product. Application: The results obtained from the study can be applied for the optimal development of a shower carrier including other equipment to effectively care for the elderly.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.2-139.2
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• 2016

Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.