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A Performance Modeling of the Lean NOx Trap Catalyst with GT-POWERTM (GT-POWERTM를 이용한 Lean NOx Trap 촉매 성능 모델링)

  • Kim, Hyunjun;Han, Manbae;Jeon, Ji-Yong;Kim, Tae-Min
    • Transactions of the Korean Society of Automotive Engineers
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    • v.21 no.6
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    • pp.64-71
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    • 2013
  • In this study we designed a lean $NO_x$ trap (LNT) model with $GT-POWER^{TM}$ program and then the LNT model was compared to the bench flow reactor test results. This model consists of 9 kinetic reactions to represent the main steps of NO oxidation, $NO_x$ adsorption, $NO_x$ release and then its reduction. The comparison was performed on the operating conditions at the space velocity of 50,000 1/hr and 80,000 1/hr with the temperature range of $200^{\circ}C{\sim}500^{\circ}C$ with the even spaced temperature step of $50^{\circ}C$. The experimental results show that the $NO_x$ conversion efficiency was enhanced by the temperature up to $350^{\circ}C$ and then decayed at higher temperatures. The LNT model predicts the similar trend of the $NO_x$ conversion efficiency to the experimental results below $350^{\circ}C$, but overestimates above $350^{\circ}C$. This overestimation comes from the higher reduction efficiency which was obtained by the different reduction gas composition such as $C_3H_6$ in the model to replace $CH_4$, $C_2H_4$ in the bench test.

Dielectrical and Pyroelectrical Properties of $Pb(Zn_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$ Compound Ceramics ($Pb(Zn_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$세라믹의 유전 및 초전 특성)

  • 이성갑;조현무
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.10
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    • pp.796-801
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    • 2001
  • Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the solid-state reaction method, and especially PZT(90/10) and PZT(10/90) powders were derived by the sol-gel method. All specimens showed a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increased in sintering temperature, the values for the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 14.4$\mu$m and 9.8$\mu$m, respectively. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247. 2.06%, respectively. The coercive field and the remanent polarization of x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 8.5kV/cm, 13$\mu$C/$\textrm{cm}^2$ and 17.2kV/cm, 28 $\mu$C/$\textrm{cm}^2$, respectively. The pyroelectric coefficient of the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 5.64$\times$10$^{-8}$ C/$\textrm{cm}^2$K and 2.76$\times$10$^{-8}$ C/$\textrm{cm}^2$K, respectively.

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Physiologic Cervical Alignment Change between Cervical Spine X-ray and Computed Tomography

  • Lee, Ho Jin;Kim, Il Sup;Hong, Jae Taek
    • Journal of Korean Neurosurgical Society
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    • v.64 no.5
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    • pp.784-790
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    • 2021
  • Objective : The purpose of this study was to investigate the correlations among various radiological parameters used to determine cervical alignment from cervical spine radiographs (X-CS) and cervical spine computed tomography (CT-CS), both within and between modalities. Methods : This study included 168 patients (≤60 years old) without a definite whole spine deformity who underwent CT-CS and X-CS. We measured occipital slope (O-s), C1 slope, C2 slope, C7 slope, sella turcica - C7 sagittal vertical axis (StC7-SVA), spino-cranial angle, T1 slope, and C27-SVA. We calculated the O-C2 angle, O-C7 angle, and C2-7 angle from the measured parameters and conducted correlation analyses among multiple parameters. Results : The intrinsic correlation features among multiple cervical parameters were very similar for both X-CS and CT-CS. The two SVA parameters (C27-SVA and StC7-SVA) were mainly influenced by the upper cervical slope parameters (r=|0.13-0.74|) rather than the lower slope cervical parameters (r=|0.08-0.13|). The correlation between X-CS and CT-CS for each radiological parameter was statistically significant (r=0.26-0.44) except for O-s (r=0.10) and StC7-SVA (r=0.11). Conclusion : The correlation patterns within X-CS and CT-CS were very similar in this study. The correlation between X-ray and CT was statistically significant for most radiological parameters, and the correlation score increased when the horizontal gaze was consistently maintained. The lower cervical parameters were not statistically associated with translation-related parameters (C2-7 SVA and StC7-SVA). Therefore, the upper cervical segment may be a better predictor for determining head and neck translation.

Gelatinization Properties of Starch Dough with Moisture Content, Heating Temperature and Heating Time (수분함량, 가열온도 및 가열시간에 따른 전분 반죽의 호화특성)

  • Lee, Boo-Yong;Lee, Chang-Ho;Lee, Cherl-Ho
    • Korean Journal of Food Science and Technology
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    • v.27 no.3
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    • pp.428-438
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    • 1995
  • The gelatinization properties of corn and waxy corn starch doughs were examined at various moisture contents, heating temperatures and heating times. The onset temperatures of gelatinization with 1% CMC using Brabender Amylograph were $64^{\circ}C$ for both corn and waxy corn starch. In the gelatinization properties using DSC, onset temperature$(T_o)$, maximum peak temperature$(T_p)$, completion temperature$(T_c)$ and enthalpy of the corn starch were $68.15^{\circ}C,\;74.01^{\circ}C,\;85.65^{\circ}C$ and $3.2\;cal/gram$ respectively. While those of the waxy corn starch were $68.24^{\circ}C,\;75.43^{\circ}C,\;93^{\circ}C$ and $4.2\;cal/gram$ respectively. In enzymatic analysis, when the moisture content increased from 36% to 52% and heating temperature from $60^{\circ}C$ to $100^{\circ}C$, the gelatinization degree of starch dough increased from about 10% to about 62%. The gelatinization degree of waxy corn starch dough was $15{\sim}20%$ higher than that of corn starch dough under the same gelatinization conditions. The regression equations of gelatinization degree (Y) of starch dough in the range of $36{\sim}52%$ moisture content $(X_1)\;60{\sim}100^{\circ}C$ heating temperature $(X_2)\;and\;0{\sim}2.0$ min heating time $(X_3)$ were examined using response surface analysis. The regression equation of corn starch dough was: $Y=28.659+8.638\;X_}+15.675\;X_2+7.770\;X_3-1.620\;{X_1}^2+10.790\;X_1X_2-4.220\;{X_2}^2+0.510\;X_1X_3+1.980\;X_2X_3-6.850\;{X_3}^2\;(R^2=0.9714)$ and that of waxy corn starch dough was: $Y=32.617+12.535\;X_1+20.470\;X_2+8.608\;X_3+4.093\;{X_1}^2+13.550\;X_1X_2-4.467\;{X_2}^2+1.560\;X_1X_3+2.160\;X_2X_3-9.527\;{X_3}^2$\;(R^2=0.9621)$. As the moisture content, heating temperature and heating time increased, the reaction rate constant(k) of gelatinization increased. The greatest reaction rate constant was observed at initial 0.5 min heating time of 1st gelatinization stage. At the heating temperature of $90^{\circ}C$, gelatinization of starch dough was completed almost in the initial 0.5 min heating time. The reaction rate constant of waxy corn starch dough was higher than that of corn starch dough under the same gelatinization conditions. At the 52% moisture content, the regression equation between reaction rate constant(k) and heating temperature(T) for corn starch dough was $log\;k=11.1140-4.1226{\times}10^3(1/T)$ (r=-0.9520) and that of waxy corn starch dough was $log\;k=10.1195-3.7090{\times}10^3(1/T)$ (r=-0.9064).

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Structure and Pyroelectrical Properties of Pb($Zn_{1/3}Nb_{2/3}$)$O_3$-Pb($Zr_{x}Ti_{1-x}$)$O_3$Compound Ceramics (Pb($Zn_{1/3}Nb_{2/3}$)$O_3$-Pb($Zr_{x}Ti_{1-x}$)$O_3$ 세라믹의 구조적, 초전 특성)

  • 조현무;이성갑;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.543-546
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    • 2000
  • Ferroeleclric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4$\mu$m. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.06%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively. The pyroelectric coefficient of the x=0.65 specimen sintered at 125$0^{\circ}C$ was 5.64$\times$10$^{-8}$ C/cm$^2$K, respectively.

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$a-Si_{1-x}Ge_x:H$ 박막의 고상결정화에 따른 스핀밀도의 변화

  • 노옥환;윤인호;이정근
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.64-64
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    • 1999
  • 다결정 실리콘-게르마늄(poly-SiGe)은 태양전지 및 TFT-LCD와 같은 소자 응용에 있어서 중요하게 연구되고 있는 물질이다. 우리는 수소화된 비정질 실리콘-게르마늄 (a-Si1-xGex:H) 박막을 증착시키고 고상결정화시키며 XRD(x-ray diffraction) 및 ESR (electron spin resonance) 측정을 수행하였다. PECVD 증착가스는 SiH4과 GeH4가스를 사용하였고 Ge의 성분비는 x=0.0, 0.1, 0.5 정도로 조절되었다. 기판은 Corning 1737 glass를 사용하였고, 기판 온도는 20$0^{\circ}C$ 이었다. 증착압력과 r.f. 전력은 각각 0.6Torr와 3W이었다. 증착된 SiGe 박막은 고상결정화를 위해 $600^{\circ}C$ N2 분위기에서 가열되고, 그에 따른 XRD 및 ESR spectrum의 변화를 관찰하였다. ESR 측정은 X-band 그리고 상온에서 행해졌다. 먼저 XRD 측정으로부터 박막의 고상결정화 정도를 알 수 있었고, 고상결정화 과정이 초기 핵형성 단계와 결정화 단계, 그리고 더 이상 결정화가 일어나지 않는 완료 단계로 구분될 수 있음을 보여주었다. X값이 증가함에 따라 결정화 시간은 훨씬 단축되었다. ESR로 측정된 스핀 밀도는 a-Si1-xGex:H 박막이 처음 가열됨에 따라 전체적으로 크게 증가했다가, 결정화가 일어나면서 다시 감소하여 나중에는 거의 변화가 없었다. ESR 신호의 초기 증가는 수소 이탈에 의한 dangling bond의 증가에 기인하며, 다음 단계의 감소 및 안정 상태는 결정화에 따른 결정경계 영역의 감소와 결함들의 안정성에 기인하는 것으로 생각된다. 그러나 흥미로운 것은 Si1-xGex 합금의 경우 가열시간이 증가됨에 따라 Si-db(Si-dangling bond)와 Ge-db에 의한 신호가 서로 분리되어 나타났으며, 이 Si-db 스핀 밀도와 Ge-db 스핀밀도의 변화정도는 x값에 크게 의존함을 보여준 것이다. 즉 순수한 a-Si:H의 경우 Si-db 의 스핀밀도의 증가시간은 4시간 정도였고, 그리고 다시 감소하였으며, x=0.1 인 박막에서 Si-db와 Ge-db의 변화 시간은 순수 S-db 변화의 경우와 거의 유사하였다. 그러나 x=0.5 샘플에서는 Si-db의 변화가 빨라져서 0.1 시간 안에 증가되었고, Ge-db의 변화는 더 빠르게 수 분 동안에 증가 된후 다시 감소하였다. 이것은 수소의 Si에 대한 친화력 뿐 만아니라 Si-H과 Ge-H 결합에너지가 주위 원자들의 구성에 크게 영향받을 수 있는 가능성을 제시해준다.

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Studies on Negative Thermal Expansion in $SrA1_2(BO_3)_2O$ Compound ($SrA1_2(BO_3)_2O$ 화합물에 있어서 열적 수축성 연구)

  • 장기석;이영건;오원균;한범수;더글라스케슬러
    • Korean Journal of Crystallography
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    • v.14 no.1
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    • pp.7-12
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    • 2003
  • The compound SrA1₂(BO₃)₂O is a good host lattice for negative thermal expansion. We have measured thermal expansion over the limited temperature range by X-ray diffraction and ceramic dilatometry. In the aluminum borate compound, a thermal contraction is observed with a coefficient -1.64×10/sup -4/ Å/℃ on the c axis in the temperature range 23∼215℃ and with a maximum change -1.75㎛ in length of a ceramic bar of 20㎜ in the temperature range 110∼170℃, respectively.

Estimation of fracture toughness of X65 and X70 steels by DWTT (X65 및 X70강 가스배관의 DWTT 및 파괴인성평가)

  • Cho, Ye-Won;Song, Young-Ho;Kim, Jeong-Min;Kim, Woo-Sik;Park, Joon-Sik
    • Journal of the Korean Institute of Gas
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    • v.16 no.3
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    • pp.54-64
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    • 2012
  • DWTT (Drop Weigh Tearing Test) is one critical method that can exhibit the fracture properties of line pipe steel, since it estimates the properties with real pipe steel. In this study, the ductile portion, inverse fracture ratio and absorbed energy of API X65 and X70 line pipe steels were estimated with temperature variation. Both steels showed that the ratio of ductile area and absorbed energy were decreased with respect to decreasing the test temperature. However, while the ductile fracture behavior exhibited until $-40^{\circ}C$ for the X70 steel, but it showed until $-30^{\circ}C$ for the X65 steel. The fracture properties were discussed with respect to test temperatures.

Grazing Incidence X-ray Diffraction (GIXRD) Studies of the Structure of Si$_{1-x}Ge_x$/Si Surface Alloy

  • Shi, Y.;Zhao, R.;Jiang, C.Z.;Fan, X.J.
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.2
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    • pp.84-87
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    • 2002
  • The Si$_{1-x}$ Gex/Si surface alloy (x = 0.3, 0.4 and 0.5), which are prepared by solid source MBE and have the SiGe epilayer thickness of 50$\AA$, are annealed with different parameters. The surface structure analyses of the heterostructure samples are made on a triple-axis X-ray diffractometer in grazing incidence X-ray diffraction (GIXRD) geometry. It has been found that with different annealing time (1.5h, 18h, 64h) and annealing temperature (550 $^{\circ}C$, 750 $^{\circ}C$), the SiGe epilayer experienced different strain relaxation process, which was deduced from the GIXRD measurements of the in-plane (220) diffraction peak of Si(001) substrate and the relevant (220) surface diffraction of SiGe epilayer. The results show that the stress relieving and the lateral strain relaxation in the SiGe/Si heterostructure can be promoted by correct annealing, which is very helpful for the preparation of SiGe/Si strained superlattice with fine strain crystallization..

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