• Korean Journal of Materials Research
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• v.2 no.6
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• pp.461-467
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• 1992

A fabrication process for SiC whisker preform reinforced AC4A Al composites is being developed. The Al alloy used as the matrix in this study is AC4A. SiC whisker preform made by Tokai Carbon Co. Ltd. Shizuoka, Japan were used. These consisted of $\beta$-type single crystals 0.1 ~ 10${\mu}$m in diameter and 20~10${\mu}$m in length. The most adequate fabrication condition was that whisker preform was preheated up to 750~80$0^{\circ}C$, set into a mould preheated to ~40$0^{\circ}C$, molten Al alloy heated to ~80$0^{\circ}C$ and applied pressure 75MPa. And Si$C_w$reinforced AC4A composite was advanced above twice than AC4AI/M. Also it was not large effect by pressure at Si$C_w$ 20v/o.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.83-85
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• 2008

4성분계 Ti-Si-C-N 코팅막은 $TiCl_4$, $SiH_4$, $CH_4$, Ar, 그리고 $N_2$ 가스 혼합체를 이용하여 RF-PECVD 기법에 의해 Si 와 AISI 304 기판위에 합성하였다. Ti-C-(0.6)-N(0.4) 조성의 코팅막에 Si를 첨가함으로 Ti(C,N) 결정질은 줄어들고, Si3N4 및 SiC 비정질상이 나타났다. Ti-Si(9.2 at.%)-C-N의 조성에서 나노 크기의 nc-Ti(C,N) 결정질을 비정질 a-Si3N4/SiC가 둘러싸고 있는 형태의 나노 복합체를 나타내었다. 경도 24 Gpa의 Ti-C-N 코팅막은 Si를 첨가함으로 Ti-Si(9.2 at.%)-C-N 조성에서 46 Gpa의 최고 경도를 나타내었으며, 마찰계수의 경우에도 Ti-C-N 코팅막에 Si를 첨가함으로 크게 낮아졌다.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.242-247
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• 1998

Hydrogenated amorphous carbon nitride[a-C:H(N)] films were deposited on p-type Si(100) at room temperature with bias voltage of 200 V by DC saddle-field plasma-enhanced chemical vapor deposition. Effects of the ratio of $N_2$ to $CH_4$($N_2/CH_4$), in the range of 0 and 4 on such properties as optical properties, microstucture, relative fraction of nitrogen and carbon, etc. of the films have been investigated. The thickness of the a-C:H(N) film was abruptly decreased with the addition of nitrogen, but at $N_2/CH_4$>0.5, the thickness of the film gradually decreased with the increase of the $N_2/CH_4$. The ratio of N to C(N/C) of the films was saturated at 0.25 with the increase of $N_2CH_4$. N-H, C≡N bonds of the films increased but C-H bond decreased with the increase of $N_2CH_4$.Optical band gap energy of the film decreased from 2.53 eV at the ratio of $N_2CH_4$=4.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.139-147
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• 1994

Orthophosphate crystals were grown by the hydrothermal method and the properties of grown crystals were investigated by means of X-ray diffraction. Vickers hardness tester, etc. The starting powders of $AIPO_4 and GaPO_4 $were prepared as a single phase by the solid state reaction of stoichiometric mixture of $AI_2O_3 or Ga_2O_3$ and $NH_4H_2PO_4$ and the subsequently by the hydrothermal treatment. The hydrothermal conditions for high growth rates of the orthophosphate crystals are as follows: $AlPO_4$ crystal; temperature ranges, between $170$~$200^{\circ}C$; temperatures difference, $15$~$20^{\circ}C;$, hydrothermal solvent, 4m HCl, $GaPO_4 crystal; temperature ranges, between $210 and 240^{\circ}C;$; temperature difference, $25$~$30^{\circ}C; $, hydrothermal solvent, 4m HCl. Morphologies of grown crystals tended to be bounded by (1010), (1011) and (0111) faces at low temperatures, and grew with well developed (0001) faces by increasing the growth temperature. On the other hand, the properties of orthophosphate crystals $(AlPO_4/GaPO_4)$ were as follows: lattice parameters (nm); a=0.494, c=1.094/a=0.490, c=1.105, density (gcm-3); 2.62/3.56, Vickers hardness (Nm^2); $1.02{\times}10^1^0/7.06{\times}10^9$, refractive indices; $ne=1.529{\pm}0.003, no=1.519{\pm}0.003/ne=1.611{\pm}0.006, no=1.599{\pm}0.006, birefringence; {\pm}0.01/{\pm}0.012$, dielectric constant (Fm-1); 6/7.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.12
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• pp.1944-1949
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• 2001

Four SiC-Si$_3$N$_4$ceramic cutting tools with different composition have been fabricated by hot-pressing. Correlations among the annealing time, the corresponding microstructure and the mechanical properties of resulting ceramics have been investigated. The fracture toughness and the grain size of both SiC and Si$_3$N$_4$in SiC-Si$_3$N$_4$composites increased with the annealing time. 1\`he hardness of SiC-Si$_3$N$_4$composites was relatively independent of the grain size and the sintered density. These ceramic cutting tools were tested under various cutting conditions and compared with the commercial Si$_3$N$_4$ceramic cutting tools. The experimental results were compared in terms of tool life and cutting force. The performance of SiC-Si$_3$N$_4$ceramic cutting tool shows the possibility to be a new ceramic tool.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.138-143
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• 1997

The crystal structure of isoimperatorin, f-[(3-methyl-2-butenyl)oxy]-7H-furo[3,2-g][1] benzopyran-7-one, has been determined from single crystal x-ray diffraction study; C16H14O4, Monoclinic, P21/c, a=8.865(1) Å, b=9.331(1) Å, c=16.156(1) Å, β=98.12(1)', V=1322.9(2) Å3, T=293(2)K, z=4, Cu Kα(λ=1.5418 Å). The structure was solved by direct method and refined by full-matrix least squares to a final R=5.72% for 1922 unique observed Fo>4o(F0) reflections and 182 parameters.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.104-111
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• 2001

B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.

• Journal of the Korean Chemical Society
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• v.55 no.4
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• pp.650-655
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• 2011

Three new peptide analogs 5a-c were obtained through coupling of 5-Amino benzimidazoles 2a-c with L-phenylalanine. For the purpose ${\alpha}$-amino group was blocked with phthalic anhydride and activation of ${\alpha}$-carboxy group of phenylalanine was carried out by preparing phthaloyl-L-phenylalanyl chloride 4. After developing a successful peptide linkage, the phthaloyl group was removed by treating 5a-c with hydrazine hydrate to get free peptides 6a-c, purified through a column of Amberlite (IR-4B). All of these compounds 2a-c and 5,6a-c have been characterized on the basis of their IR, 1H NMR and EIMS analyses. Antibacterial activity of these compounds is also been reported.

• Korean Journal of Agricultural and Forest Meteorology
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• v.13 no.3
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• pp.123-139
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• 2011

It is expected that identification and lists of $C_4$ plants in specific regions are useful not only for the ecological researches that are related to vegetation phenology and succession but also as an index of climate change. In this review, $C_4$ plants growing in South Korea were listed and their life forms were investigated. In addition, we discussed the influences that climatic change and the $C_4$ plants exerted on plant ecosystem. Photosynthetic pathway types ($C_3$ and $C_4$) for the plant species in South Korea were determined by reviewing the scientific literatures published between 1971 and 2010. Of the total 4476 species in 1123 genera and 197 families, 206 species (4.6%) in 84 genera (7.5%) and 21 families (10.7%) were identified as $C_4$ plants (including $C_3$-$C_4$ intermediate plants). Among the identified $C_4$ species, 53 species (25.7%) in 26 genera and 15 families were classified as Dicotyledoneae, while 153 species (74.3%) in 58 genera and 6 families were classified as Monocotyledoneae. The majority of the $C_4$ species belong to four families: Chenopodiaceae (15 species), Amaranthaceae (13 species), Gramineae (102 speceis) and Cyperaceae (45 species). With respect to life form composition of 206 $C_4$ species, Th-$R_5$-$D_4$-t was most dominant: 95 species (46.1%) were included in Th, 123 species (59.7%) in $R_5$, 179 species (86.9%) in $D_4$, and 122 species (59.2%) in t. The projected increase in temperature due to climate change may provide better conditions for the growth of $C_4$ plants. Such a result will have considerable impacts on the interspecific competition between $C_3$ and $C_4$ plants, the distribution of $C_4$ plants, plant phenology, and plant diversity.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.7-16
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• 1993

Effect of sulfate on the reactionof C3S formation in presence of clinker melt and its appearance in clinker were investigated, using (NH4)2SO4 and CaSO4 as sulfate sources. When (NH4)2SO4 and CaSO4 were added, both showed the similar results, 1.0wt% of sulfate could promoted the reaction of C3S formation, however for its content of more than 2.0wt%, the formation of C3S was prevented. Residual limit of sulfate to C3S formation is about 1.4wt%. Appearances of sulfate were C4A3l and CaSO4 in interstitial phase. For the addition of (NH4)2SO4 or CaSO4 of 20wt%~4.0wt%, C3S grains showed the hypertrophic growth. We might consider that, because sulfate reduced the surface tension and viscosity of the clinker melt, C3S crystals were precipitated below 140$0^{\circ}C$, and the crystlas of C3S were coalesced and linked in the same crystallographical direction with increasing temperature becuase of their rapid growth rate.