• The Journal of Korean Institute of Communications and Information Sciences
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• v.8 no.1
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• pp.12-16
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• 1983

This paper is dealing a $V_3O_5-P_2O_5$ metal oxide glass semiconductor. This semiconductor is easy to fabricate in the atmospheric condition at relatively low temperature. The element is made like a bead, and platinum segments are used as electrodes. Other kind of metal withstanding high temperature near 1000C can also be used as electrode. Experiment verifies that the fabricated element has the resistance in the order of about ~$10^5\;\Omega$, and shows negative resistance characteristics and switching characteristics with respect to temperature. An equivalent circuit of the element is proposed based on its electrical characteristcs.

• Journal of the Korean Ceramic Society
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• v.11 no.3
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• pp.19-26
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• 1974

Mechanical properties of the system PbO-B2O3-V2O5 low melting glass during crystallization by heat-treatment were investigated. Wettability of the system PbO-B2O3-V2O5 was excellent and appropriate for commercial sealing as a low melting solder glass. Crystals, during heat-treated at 30$0^{\circ}C$ of the system PbO-B2O3-V2O5 were $\beta$-4PbO.B2O3, 5PbO.4B2O3, and Pb2V2O7 mainly. The percent of crystallinity was 82$\pm$5%. Mechanical properties of the system PbO-B2O3-V2O5 were influenced not only by the differences of density and coefficient of thermal expansion and the stress induced from the difference in the density and coefficient of thermal expansion between glass phase and crystals but also crystallization conditions.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.35-42
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• 1998

- The Si-$SiO_2$ interface of silicon on insulator (SOI) formed by 100 keV $O^+$ was ohserved using high resolution transmission electron microscopy (HRTEM), before and after annealing. The interface of as-implanted sample, ~$5\times 10^{17}\textrm{cm}^{-2}O^+$ implanted at $550^{\circ}C$ was very rough and it has many defectsoxide precipitate, stacking fault, coesite $SiO_2$ etc. However, the interface became flat by high temperature annealing at $1300^{\circ}C$ for 4 hour. It's roughness, observed by HRTEM, was comparable to the interface roughness of 3 keV $O_2^\;+$ ion beam oxide and -6 nm gate oxide formed by thermal oxidation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.4
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• pp.988-996
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• 1998

BN ceramics with 0.07wt% $V_{2}O_{5}$ and 0.03wt% CuO(BNC3V7) sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. Dielectricconstant of 44.3, TCF of 22 ppm$/^{\circ}C$ and $Qxf_{o}$ value of 22,000 GHz can be obtained from BNC3V7, multilayer type band pass filters using tapped method and conventional method were designed for PCS (Personal Communication System) applications. Tapped method by adopting input/output-tapping scheme the chip filter stucture becomes simpler and needs fewer layers than that using the conventional input/output-coupling scheme. A multilayer type band pass filter fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at $900^{\circ}C$ were compared with the designed ones. Even though the centered frequencies of tapped and conventional band pass chaip filters were measured to shift about 90MHz downward, the band pass characteristics of both filters were similar that of designed ones. The spuriousresonance characteristic of tapped pass chip filter was better than that of conventional chip filer.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.51-56
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• 2001

$CeO_2$ thin films as insulator for MFISFET (Metal-ferroelectric-insulator- semiconductor-field effect transistor) were deposited by r.f. magnetron sputtering. Ar and $O_2$ gas as the deposition gas were used and the effects of oxygen partial pressure during sputtering on texture and electrical properties of $CeO_2$ thin films were evaluated. All $CeO_2$ thin films deposited on p-type Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The films deposited with only Ar gas among various condition had highest preferred orientation but show large hysteresis characteristics in capacitance-voltage measurement due to relatively many charged paricles and roughness. Films show smooth surface state and good C-V characteristics with increasing oxygen partial pressure. It was thought that this trend in C-V characteristics was due to the amount of mobile ionic charge within $CeO_2$ films. The composition of films show oxygen excess, that is, O/$Ce_2$ ratio of films was 2.22~2.42 range and leakage current of films show $10^{-7}~10^{-8}A$order at 100 kV/cm.

• Journal of Korean Society for Atmospheric Environment
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• v.18 no.E1
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• pp.29-36
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• 2002

The selective catalytic reduction (SCR) reaction of promoter catalysts was investigated in this study. A pure anatase type of TiO$_2$ was used as support. Activation measurement of prepared catalysts was practiced on a fixed reactor packing by the glass bead after filling up catalysts in 1/4 inch stainless tube. The reaction temperature was measured by K-type thermocouple and catalyst was heated by electric furnace. The standard compositions of the simulated flue gas mixture in this study were as follows: NO 1,780ppm, NH$_3$1,780ppm, $O_2$1% and $N_2$ as balance gas. In this study, gas analyzer was used to measure the outgassing gas. Catalyst bed was handled for 1hr at 45$0^{\circ}C$, and the reactivity of the various catalyst was determined in a wide temperature range. Conversion of NH$_3$/NO ratio and of $O_2$ concentration was practiced at 1,1.5 and 2, respectively. The respective space velocity were as follows . 10,000, 15,000 and 17,000 hr-1. It was found that the maximum conversion temperature range was in a 5$0^{\circ}C$. It was also found toi be very sensitive at space velocity, $O_2$ concentration, and NH$_3$/NO ratio. We also noticed that the maximum conversion temperature of (W, Mo, Sn) -V$_2$O$_{5}$/TiO$_2$ catalysts was broad. Specially WO$_3$-V$_2$O$_{5}$TiO$_2$2 catalyst appeared nearly 100% conversion at not only above 30$0^{\circ}C$ ut also below 25$0^{\circ}C$. At over 30$0^{\circ}C$, NH$_3$ oxidation decreased with decrease of surface excess oxygen. In addition, WO$_3$-V$_2$O$_{5}$TiO$_2$ catalyst did not appear to affect space velocity, $O_2$ concentration, and NH$_3$/NO ratio.ratio.

• Korean Chemical Engineering Research
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• v.57 no.6
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• pp.891-897
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• 2019

In this study, heteropoly acid PVMo catalysts were supported on activated carbon with various composition of phosphoric acid ($H_3PO_4$), vanadium (V) pentoxide ($V_2O_5$) and molybdenum (VI) trioxide ($MoO_3$). Catalytic performance was examined at $140^{\circ}C$ for 1hour in vapor formaldehyde. XRD and BET analyses were carried with the catalysts before and after the reaction. Formaldehyde conversion was increased with decreasing Mo and $H_3PO_4$ content and increasing $V_2O_5$ content. Acidity of the catalysts was investigated with $NH_3-TPD$. Crystallinity of the catalysts was relatively low, and surface area was decreased after the reaction. In $NH_3-TPD$ result, the ratio of strong acid site corresponding to $NH_3$ desorption between $400^{\circ}C$ and $500^{\circ}C$ was increased by decreasing $MoO_3$ and $H_3PO_4$ content and increasing $V_2O_5$ content. Therefore, it was found that the strong acid site could affect the catalytic reactivity in vapor formaldehyde conversion.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.30 no.4
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• pp.550-555
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• 1997

Vibrio cholerae non-O1 (V. cholerae non-O1) was previously called nonagglutinable or noncholera vibrios, since it fails to react with polyvalent O1 antisera. This organism is biochemically and genetically indistinguishable from V. cholerae O1 except serological difference. V. cholerae non-O1 strains are often detected in the environment including bays, estuaries, and fresh water, and also found in food. Therefore it is designated food borne bacterium in Japan. However, research papers on V. cholerae non-O1 are very rare in Korea. In order to investigate bacteriological characteristics of V. cholerae non-O1, we isolated V. cholerae non-O1 from the environmental sea water. Among the isolated V. cholerae non-O1 strains, we selected the strain which had the most strong hemolytic activity, named as V. cholerae non-O1 FM-3. The optimum growth conditions of V. cholerae non-O1 FM-3 were $37^{\circ}C$ and pH 8.5 in BHI broth (containing $0.5\%$ sodium chloride), and it grew better than V. cholerae non-O1 ATCC 25872. But both were not able to grow in BHI broth added $5.0\%$ of sodium chloride or adjusted to pH 5.0. According to the experimental results on the susceptibility test against various antibiotics, there were no significant differences between the isolated strain and reference strain (V. cholerae non-O1 ATCC 25872). Most of the antibiotics examined had bacteriostatic action against V. cholerae non-O1 FM-3 while vancomycin, oxacillin, colistin, polymyxin B, and sulfadiazine had no bacteriostatic activity.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.576-580
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• 2017

In the present paper, the thermal deactivation characteristics of plate-type commercial $V_2O_5-WO_3/TiO_2$ SCR catalyst were investigated. For this purpose, the plate-type catalyst was calcined at different temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ for 3 hours. Structural and morphological changes were characterized byXRD, specific surface area, porosity, SEM-EDS and also NOx conversion with ammonia according to the calcine temperature. The NOx conversion decreased with increasing calcine temperature, especially when the catalysts were calcined at temperatures above $700^{\circ}C$. This is because the crystal phase of $TiO_2$ changed from anatase to rutile, and the $TiO_2$ grain growth and $CaWO_4$ crystal phase were formed, which reduced the specific surface area and pore volume. In addition, $V_2O_5$, which is a catalytically active material, was sublimated or vaporized over $700^{\circ}C$, and a metal mesh used as a support of the catalyst occurred intergranular corrosion and oxidation due to the formation of Cr carbide.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.37-42
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• 1998

The barrier heights and carrier densities of ZnO varistors with various compositions were estimated using C-V, J-V and $\rho$-T relations. The barrier heights obtained from C-V and J-V plots were 0.73~5.98 eV and 0.25~2.70 eV, respectively. The carrier densities estimated from C-V plots were ~$10^{18}cm^{-3}$. Acceptable values of the barrier heights and the carrier densities were obtained from $\rho$-1/T curves and the capacitances at zero bias; 0.6~0.8 eV for the barrier heights and ~$10^{17}cm^{-3}$ for carrier densities. Addition of cobalt increased the barrier height and the carrier density, while chromium slightly lowered both of them.