• 한국안광학회지
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• 제5권2호
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• pp.99-105
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• 2000

작업환경에서 시력저하가 나타나는 굴절이상의 종류별 분포는 안경사 100명, 사진기사 100명, 대학생 100명중 단성근시 35% 근시성 단난시 2% 근시성 복난시 30.6% 혼합난시 6.26% 원시성 복난시 3.74% 정시 22.4%의 순으로 나타났다. 양안 굴절이상의 근시도수 분포는 -0.50~-2.00 Dptr가 전체 대상자중 14%, -2.00~-6.00 Dptr 이상이 16% -6.00 Dptr 이상이 5%로 나타났으며, 근시성 단난시의 분포는 C-0.25(90, 180)~C-2.00 Dptr Axis(90, 180) 2%, 근시성 복난시의 분포는 S-0.25 C-0.25 Dptr Axis(90, 180)~S-1.00 C-1.00 Dptr Axis(90, 180)이 22.6%, S-1.00 C-1.00 Dptr Axis(90, 180)~S-2.00 C-2.00 Dptr Axis(90, 180)이 8%로 나타났다. 혼합난시의 분포는 S+0.25 C-0.25 Axis(90, 180)~S+2.00 C-2.00 Axis(90, 180)가 6.26%, 원시성 복난시의 분포는 S+0.25 C+0.25 Axis(90, 180)~S+1.00 Dptr Axis(90, 180)가 3.4%, S+1.00 C+1.00 Axis(90, 180)~S+2.00 C+2.00 Dptr Axis(90, 180)가 0.34%의 순으로 나타났다.

• 한국세라믹학회지
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• 제33권7호
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• pp.802-808
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• 1996

PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.116-119
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• 2000

The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.51-55
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• 2000

Using modified melt-textured grown targets, YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin films were prepared by pulsed laser deposition technique at the laser energy density from 1 J/cm$_2$ to 4 J/cm$_2$. All the films showed c-axis preferred orientations, however, a-axis outgrowths on the film surface were considerably increased with an increase of the laser energy density. To examine the origin of the a-axis outgrowth formation, the microstructures of films deposited at 2 J/cm$_2$ and 4 J/cm$_2$ were investigated using X-ray diffraction, transmission electron microscopy, and high-resolution electron microscopy. It was shown that a significant number of Y$_2$O$_3$ inclusions were formed during the growth of c-axis oriented films at 4 J/cm$_2$. These inclusions formed nucleation sites for the a-axis outgrowths. It is considered that, due to the unstable growth conditions with a high flux density of incident vapor species and the strain induced by the surrounding c-axis films, the Y$_2$O$_3$ inclusions would prefer the nucleation of α-axis grains.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.685-687
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• 한국결정성장학회지
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• 제18권2호
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• pp.72-75
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• 2008

Zinc oxide (ZnO) thin films were prepared by a sol-gel method. The structural and electrical properties were investigated by varying drying and annealing temperatures. The thin films were coated (250 nm) by spin-coating method on glass substrates. The optimum drying temperature of ZnO thin films was 300$^{\circ}C$ where the resistivity was the lowest and the preferred c-axis orientation was the highest. The annealing was carried out in air and inert atmospheric conditions. The degree of the preferred c-axis orientation was estimated. The highest preferred c-axis orientation was recorded at 600$^{\circ}C$. The preferred c-axis orientation and grain growth resulted in the mobility enhancement of the ZnO thin films, and the lowest resistivity was 0.62${\Omega}{\cdot}cm$ at 600$^{\circ}C$.

• Progress in Superconductivity
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• 제2권1호
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• pp.15-19
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• 2000

[ $YBa_2Cu_3O_{7-\delta}$ ] thin films were deposited by laser ablation using modified melt-textured grown targets. As the laser energy density was increased, the films showed an increasing c-axis orientation and an improvement of superconducting properties. However, at 4 $J/cm^2$, the degree of c-axis alignment and $J_c$ of the film were considerably reduced. These were attributed to the enhanced a-axis outgrowths. It was shown that the increased laser energy density resulted in the formation of $Y_2O_3$ inclusions during the c-axis film growth, and that these inclusions nucleated the a-axis outgrowths.

• 한국안광학회지
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• 제6권1호
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• pp.43-47
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• 2001

구면렌즈와 비구면렌즈를 착용한 피검자의 굴절이상을 중등도근시, 중등도 근시성 복난시, 중등도 혼합난시이상의 착용자를 대상으로 비교하였다. 양안 굴절이상의 구면렌즈 착용자는 S-3.00 ~ S-6.00Dptr 가 16%, S-6.00D Dptr 이상이 19%, S-3.00C-0.50(90.180) ~ S-6.00C-2.00DptrAxis(90.180) 이 57%, S-3.00C+0.50 ~ S-6.00C+2.00DptrAxis(90.180)이 8%로 분포되어 나타났으며, 비구면렌즈 착용자는 S-3.00 S-6.00Dptr이 31%,S-6.00Dptr 이상이 36%, S-3.00C-0.50(90.180) ~ S-6.00C-2.00DptrAxis(90.180)이 21%, S-3.00C+0.50(90.180) ~ S-6.00C+2.00DptrAxis(90.180)이 12%로 분포되었다.

• 전기의세계
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• 제23권2호
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• pp.55-61
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• 1974

Nature of magnetic creep phenomena in low coercive force films(Ni 80%-Fe 20%) in form of narrow channels imbedded in high coercive force films is studied in this work. Aluminium is evaporated on the hot glass substrate and eched free in the shape of narrow channels by photoetoetching method. then, Permalloy(Ni 80%, Fe 20%) is deposited on these Aluminium substrate under the uniform field of 30(Oe) to introduce anisotropy. Permalloy film on Al has a high coercive force and one on the substrate devoid of Al has how coercive force. Magnetic revers domain which is introduced at the end of channel grows under the a.c field in hard axis direction, in spite of very weak d.c field in easy axis direction. This creeping is investigated as a function of external fields and channel widths. Permalloy film thickness is 500.angs.-900.angs. and channel widths are 40, 51, 65, 81, 115.mu. respectively. Creeping increases as external field increases while it decreases with channel width decrease. Creep velocity in channels depends on the a.c field along hard axis, d.c field along easy axis and channel widths and its range is 1-10cm/sec in this experiment. From study of dependence of creep velocity on channel width, it can be concluded that creep velocity is expressed in form of v=v$_{0}$ exp .alpha.(H-H$_{0}$) where .alpha. is a function of a.c field along hard axis and H is driving d.c field along easy axis, H$_{0}$ is not a coercive force of film as usuall expected but the d.c threshold field along easy axis which is a function of channel width. This characteristic is also confirmed by the study of dependence of creep velocity upon easy axis field strength. Value of .alpha. obtained is 1.3-2.3cm/sec We depending upon film charactor, hard axis field strength and frequency.uency.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1475-1477
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• 2001

In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.