• Title/Summary/Keyword: C-axis

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A study of Frequency Distributions by the Action styles (작업환경에서 오는 시력분포 및 고찰)

  • Kang, Hyang Nyeo;Kim, Sung Tae
    • Journal of Korean Ophthalmic Optics Society
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    • v.5 no.2
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    • pp.99-105
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    • 2000
  • The classifying distribution by the action style was opticion 100, photoartist 100, college student 100 for the simple myopic 35%, for the simple myopic astigmatism 2%, for the compound myopic astigmatism 30.6% for the mixed astigmatism 62.6% for the compound hyperopic astigmatism 37.4% for the ratio of emmetropia 22.4% respectively. The retractive erroreye were -0.50~-2.00Dptr for the simple myopia 14%, -2.00~-6.00Dptr 16%, -6.00Dptr 5%, C-0.25(90.180)~C-2.00DptrAxis(90, 180) 2% for the simple myopicastigmatismS-0.25C-0.25DptrAxis(90, 180)~S-1.00C-1.00DptrAxis (90, 180) 22.6%, S-1.00C-1.00 DptrAxis (90, 180)~S-2.00C-2.00DptrAxis(90, 180) 8% for the compound myopic astigmatism. S+0.25C -0.25DptrAxis(90, 180)~S+2.00C-2.00DptrAxis(90,180) 6.2% for the mixed astigmatism. S+0.25C+0.25DptrAxis(90,180)~S+1.00C+1.00DptrAxis(90,180) 3.4%, S+1.00C+1.00DptrAxis(90,180)~S+2.00C+2.00DptrAxis(90,180) 0.34% for the compound hyperopic astigmatism.

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Effect of Annealing on c-axis Orientation of $PbTiO_3$ Thin Films by D.C magnetron Reactive Sputtering (D.C Magnetron Reactive Sputtering 법으로 증착한 $PbTiO_3$ 박막의 열처리에 따른 c-축 배향성의 변화)

  • 이승현;권순용;최한메;최시경
    • Journal of the Korean Ceramic Society
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    • v.33 no.7
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    • pp.802-808
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    • 1996
  • PbTiO3 thin films were fabricated onto MgO(100) single crystal substrate by reactive D. C magnetron sput-tering of Pb and Ti metal in an oxygen and argon gas mixture. The annealing of the thin films resulted in the decrease of both the c-axis orientation ratio and the lattice parameter. It is well known that the c-axis lattice parameter of thin film is dependent on the Pb/(Pb+Ti)ratio and the residual stress in the film The PbTiO3 thin films with a Pb/(Pb+T) ratio ranging from 0.45 to 0.57 were fabricated and annealed. The structure of the film the c-axis orientation ratio and the lattice parameter were not dependent on the Pb/(Pb+Ti) ratio before and after annealing. These experimental results proved that the decrease of the c-axis lattice parameter under the annealing conditions was due to the relaxation of the intrinsic stress in the film. This relaxation of the intrinsic stress caused the decrease of the c-axis orientation ratio and this phenomenon can be explained by c-axis growth lattice model.

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Orientation Control of $SrBi_2Ta_2O_9$ Thin Films on Pt (111) Substrates

  • Lee, Si-Hyung;Lee, Jeon-Kook;Choelhwyi Bae;Jung, Hyung-Jin;Yoon, Ki-Hyun
    • The Korean Journal of Ceramics
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    • v.6 no.2
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    • pp.116-119
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    • 2000
  • The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.

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TEM study on a-axis outgrowth formation in c-axis oriented YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin films

  • Hahn, T.S.;Hong, K.S.;Kim, C.H.
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.51-55
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    • 2000
  • Using modified melt-textured grown targets, YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin films were prepared by pulsed laser deposition technique at the laser energy density from 1 J/cm$_2$ to 4 J/cm$_2$. All the films showed c-axis preferred orientations, however, a-axis outgrowths on the film surface were considerably increased with an increase of the laser energy density. To examine the origin of the a-axis outgrowth formation, the microstructures of films deposited at 2 J/cm$_2$ and 4 J/cm$_2$ were investigated using X-ray diffraction, transmission electron microscopy, and high-resolution electron microscopy. It was shown that a significant number of Y$_2$O$_3$ inclusions were formed during the growth of c-axis oriented films at 4 J/cm$_2$. These inclusions formed nucleation sites for the a-axis outgrowths. It is considered that, due to the unstable growth conditions with a high flux density of incident vapor species and the strain induced by the surrounding c-axis films, the Y$_2$O$_3$ inclusions would prefer the nucleation of α-axis grains.

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C-axis Orientation of ZnO Thin Films Prepared by FTS Method (대향타겟식스퍼터링으로 제작된 ZnO 박막의 C-축 배향성)

  • 금민종;손인환;최형욱;최동진;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.685-687
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    • 1999
  • We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

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Effect of heat-treatment on the structural and electrical properties of ZnO thin films by the sol-gel method

  • Lee, Seung-Yup;Park, Byung-Ok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.2
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    • pp.72-75
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    • 2008
  • Zinc oxide (ZnO) thin films were prepared by a sol-gel method. The structural and electrical properties were investigated by varying drying and annealing temperatures. The thin films were coated (250 nm) by spin-coating method on glass substrates. The optimum drying temperature of ZnO thin films was 300$^{\circ}C$ where the resistivity was the lowest and the preferred c-axis orientation was the highest. The annealing was carried out in air and inert atmospheric conditions. The degree of the preferred c-axis orientation was estimated. The highest preferred c-axis orientation was recorded at 600$^{\circ}C$. The preferred c-axis orientation and grain growth resulted in the mobility enhancement of the ZnO thin films, and the lowest resistivity was 0.62${\Omega}{\cdot}cm$ at 600$^{\circ}C$.

Microstructure and Property Relationship of Laser Ablated YBCO Thin Films from Modified Melt-Textured Grown Targets

  • Kim, C.H.;Hahn, T.S.;Hong, K.S.
    • Progress in Superconductivity
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    • v.2 no.1
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    • pp.15-19
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    • 2000
  • [ $YBa_2Cu_3O_{7-\delta}$ ] thin films were deposited by laser ablation using modified melt-textured grown targets. As the laser energy density was increased, the films showed an increasing c-axis orientation and an improvement of superconducting properties. However, at 4 $J/cm^2$, the degree of c-axis alignment and $J_c$ of the film were considerably reduced. These were attributed to the enhanced a-axis outgrowths. It was shown that the increased laser energy density resulted in the formation of $Y_2O_3$ inclusions during the c-axis film growth, and that these inclusions nucleated the a-axis outgrowths.

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A Study of the Refraction State on Spherical Lens and Aspherical Lens (구면렌즈와 비구면렌즈를 착용한 굴절이상안의 비교에 관한 연구)

  • Kang, Hyang Nyeo;Kim, Jin Koo
    • Journal of Korean Ophthalmic Optics Society
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    • v.6 no.1
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    • pp.43-47
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    • 2001
  • The classifying distribution by the Spherical lens and Aspherical lens was middle myopic, middle myopic astigmatism middle mixed astigmatism compared. The refractive erroeye spherical lens were S-3.00 ~ S-6.00Dptr for the middle myopic 16%, S-6.00Dptr 19%, S-3.00C-0.50(90.180) ~ S-6.00C-2.00Asix(90.180)57%, S-3.00C+0.50(90.180) ~ S-6.00C+2.00Axis(90.180) 8% for the compound myopic astigmatism. Aspherical lens were S-3.00 ~ S-6.00Dptr for the middle myopic 31%, S-6.00Dptr 36%, S-3.00C-0.50(90.180) ~ S-300C-2.00Axis(90.180) 21%, S-3.00C+0.50(90.180) ~ S-3.00C+2.00Axis(90.180)12%, for the compound hyperopic astigmatism.

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Magnetic Creep in Narrow Channel (좁은 Channel에서의 자기적 Creep)

  • 박영문
    • 전기의세계
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    • v.23 no.2
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    • pp.55-61
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    • 1974
  • Nature of magnetic creep phenomena in low coercive force films(Ni 80%-Fe 20%) in form of narrow channels imbedded in high coercive force films is studied in this work. Aluminium is evaporated on the hot glass substrate and eched free in the shape of narrow channels by photoetoetching method. then, Permalloy(Ni 80%, Fe 20%) is deposited on these Aluminium substrate under the uniform field of 30(Oe) to introduce anisotropy. Permalloy film on Al has a high coercive force and one on the substrate devoid of Al has how coercive force. Magnetic revers domain which is introduced at the end of channel grows under the a.c field in hard axis direction, in spite of very weak d.c field in easy axis direction. This creeping is investigated as a function of external fields and channel widths. Permalloy film thickness is 500.angs.-900.angs. and channel widths are 40, 51, 65, 81, 115.mu. respectively. Creeping increases as external field increases while it decreases with channel width decrease. Creep velocity in channels depends on the a.c field along hard axis, d.c field along easy axis and channel widths and its range is 1-10cm/sec in this experiment. From study of dependence of creep velocity on channel width, it can be concluded that creep velocity is expressed in form of v=v$_{0}$ exp .alpha.(H-H$_{0}$) where .alpha. is a function of a.c field along hard axis and H is driving d.c field along easy axis, H$_{0}$ is not a coercive force of film as usuall expected but the d.c threshold field along easy axis which is a function of channel width. This characteristic is also confirmed by the study of dependence of creep velocity upon easy axis field strength. Value of .alpha. obtained is 1.3-2.3cm/sec We depending upon film charactor, hard axis field strength and frequency.uency.

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A Study on the c-axis preferred orientation of CoCr(-Ta)/Si doublelayer (CoCr(-Ta)/Si 이층막의 c-축 우선 배향성에 관한 연구)

  • Kim, Y.J.;Park, W.H.;Kwon, S.K.;Son, I.H.;Choi, H.W.;Kim, K.H.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1475-1477
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    • 2001
  • In odor to set high saturation magnetization and coercivity, it had need to orient axis of easy magnetization of CoCr-based thin film perpendicular direction(c-axis) to the substrate plane. It was known that crystalline orientation of CoCr-based thin film was improved by introducing underlayer like Ti, Ge. We prepared singlelayer and double layer with Si underlayer by Facing Targets Sputtering System. As a result, intensity and c-axis dispersion angle ${\Delta}{\theta}_{50}$ of singlelayer were improved with increasing film thickness. Also, it was found that CoCr/Si and CoCrTa/Si double layer showed good c-axis dispersion angle due to introducing Si.

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