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Electrochemical Characteristics of Dental Implant in the Various Simulated Body Fluid and Artificial Saliva (다양한 유사체액과 인공타액에서 치과용 임플란트의 전기화학적 특성)

  • Kim, T.H.;Park, G.H.;Son, M.K.;Kim, W.G.;Jang, S.H.;Choe, H.C.
    • Journal of the Korean institute of surface engineering
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    • v.41 no.5
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    • pp.226-231
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    • 2008
  • Titanium and its alloy have been widely used in dental implant and orthopedic prostheses. Electrochemical characteristics of dental implant in the various simulated body fluids have been researched by using electrochemical methods. Ti-6Al-4V alloy implant was used for corrosion test in 0.9% NaCl, artificial saliva and simulated body fluids. The surface morphology was observed using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The electrochemical stability was investigated using potentiosat (EG&G Co, 263A). The corrosion surface was observed using scanning electron microscopy (SEM). From the results of potentiodynamic test in various solution, the current density of implant tested in SBF and AS solution was lower than that of implant tested in 0.9% NaCl solution. From the results of passive film stability test, the variation of current density at constant 250 mV showed the consistent with time in the case of implant tested in SBF and AS solution, whereas, the current density at constant 250mV in the case of implant tested in 0.9% NaCl solution showed higher compared to SBF and AS solution as time increased. From the results of cyclic potentiodynamic test, the pitting potential and |$E_{pit}\;-\;E_{corr}$| of implant tested in SBF and AS solution were higher than those of implant tested in 0.9% NaCl solution.

Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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SURFACE CHARACTERISTICS AND BIOACTIVITY OF ANODICALLY OXIDIZED TITANIUM SURFACES (양극산화에 의한 티타늄 산화막의 표면 특성 및 생체 활성에 관한 연구)

  • Lee, Sang-Han;Cho, In-Ho
    • The Journal of Korean Academy of Prosthodontics
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    • v.45 no.1
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    • pp.85-97
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    • 2007
  • Statement of problem: Recently, anodic oxidation of cp-titanium is a popular method for treatment of titanium implant surfaces. It is a relatively easy process, and the thickness, structure, composition, and the microstructure of the oxide layer can be variably modified. Moreover the biological properties of the oxide layer can be controlled. Purpose: In this study, the roughness, microstructure, crystal structure of the variously treated groups (current, voltage, frequency, electrolyte, thermal treatment) were evaluated. And the specimens were soaked in simulated body fluid (SBF) to evaluate the effects of the surface characteristics and the oxide layers on the bioactivity of the specimens which were directly related to bone formation and integration. Materials and methods: Surface treatments consisted of either anodization or anodization followed thermal treatment. Specimens were divided into seven groups, depending on their anodizing treatment conditions: constant current mode (350V for group 2), constant voltage mode (155V for group 3), 60 Hz pulse series (230V for group 4, 300V for group 5), and 1000 Hz pulse series (400V for group 6, 460V for group 7). Non-treated native surfaces were used as controls (group 1). In addition, for the purpose of evaluating the effects of thermal treatment, each group was heat treated by elevating the temperature by $5^{\circ}C$ per minute until $600^{\circ}C$ for 1 hour, and then bench cured. Using scanning electron microscope (SEM), porous oxide layers were observed on treated surfaces. The crystal structures and phases of titania were identified by thin-film x-ray diffractmeter (TF-XRD). Atomic force microscope (AFM) was used for roughness measurement (Sa, Sq). To evaluate bioactivity of modified titanium surfaces, each group was soaked in SBF for 168 hours (1 week), and then changed surface characteristics were analyzed by SEM and TF-XRD. Results: On basis of our findings, we concluded the following results. 1. Most groups showed morphologically porous structures. Except group 2, all groups showed fine to coarse convex structures, and the groups with superior quantity of oxide products showed superior morphology. 2. As a result of combined anodization and thermal treatment, there were no effects on composition of crystalline structure. But, heat treatment influenced the quantity of formation of the oxide products (rutile / anatase). 3. Roughness decreased in the order of groups 7,5,2,3,6,4,1 and there was statistical difference between group 7 and the others (p<0.05), but group 7 did not show any bioactivity within a week. 4. In groups that implanted ions (Ca/P) on the oxide layer through current and voltage control, showed superior morphology, and oxide products, but did not express any bioactivity within a week. 5. In group 3, the oxide layer was uniformly organized with rutile, with almost no titanium peak. And there were abnormally more [101] orientations of rutile crystalline structure, and bonelike apatite formation could be seen around these crystalline structures. Conclusion: As a result of control of various factors in anodization (current, voltage, frequency, electrolytes, thermal treatment), the surface morphology, micro-porosity, the 2nd phase formation, crystalline structure, thickness of the oxide layer could be modified. And even more, the bioactivity of the specimens in vitro could be induced. Thus anodic oxidation can be considered as an excellent surface treatment method that will able to not only control the physical properties but enhance the biological characteristics of the oxide layer. Furthermore, it is recommended in near future animal research to prove these results.

Biocompatibility and Surface Characteristics of (Si,Mn)-HA Coated Ti-Alloy by Plasma Electrolytic Oxidation (PEO법으로 (Si,Mn)-HA 코팅된 치과 임플란트용 Ti 합금의 생체적합성 및 표면특성)

  • Gang, Jeong-In;Son, Mi-Gyeong;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.83-83
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    • 2017
  • 생체재료의 표면은 이식과 동시에 생체계면의 역할을 하게 되어, 일련의 생물학적 반응이 시작되고 진행되는 중요한 장소가 된다. 초기에 생체계면에서 일어나는 단백질 흡착이나 염증반응을 비롯한 생물학적 반응들은 궁극적으로 임플란트의 성패를 좌우할 만큼 중요하다. 골융합을 개선하기 위한 다른 방법으로 생체불활성의 타이타늄 (Ti)과 골조직의 능동적인 반응을 이루기 위해 생체활성 표면을 부여함으로서 계면에서의 골형성 반응을 증진시키는 방법이 이용된다. 생체불활성의 Ti과 Ti합금은 골조직과 직접적인 결합을 이루지 못하므로, 골조직과의 반응을 향상하기 위해 여러 종류의 생체활성 재료를 코팅하는 방법이 연구되어 왔고, 이 중 생체의 변화와 가장 유사한 하이드록시아파타이트 코팅이 가장 대중적인 방법으로 사용되었으며 이는 초기 골형성을 촉진하는 것으로 알려졌다. 치과용 임플란트의 표면형상과 화학조성이 골 융합에 영향을 미치는 가장 중요한 인자이므로 최근의 연구동향은 이들 두 가지 표면특성을 결합함으로서 결과적으로 최적의 골세포반응을 유도하고, 골융합 후 골조직과의 micromechanical interlocking에 의해 임플란트의 안정성에 중요한 역할을 하는 마이크론 단위의 표면조도와 표면 구조를 유지하면서, 부가적으로 골 조직 반응을 능동적으로 개선할 수 있는 생체활성 성분을 부여하여 골 융합에 상승효과를 이루기 위한 표면처리법에 관해 많은 연구가 요구되어지고 있다. 따라서 골을 구하는 원소인 망간과 실리콘으로 치환된 하이드록시아파타이트를 플라즈마 전해 산화법으로 코팅하여 세포와 잘 결합할 수 있는 표면을 제공함으로써 골 융합과 치유기간을 단축시킬 수 있을 것으로 사료된다. 실험방법은 시편은 치과 임플란트 제작 합금인 Ti-6Al-4V ELI disk (grade 5, Timet Co., USA; diameter, 10 mm, thickness, 3 mm)이며, calcium acetate monohydrate, calcium glycerophosphate, manganese(II) acetate tetrahydrate, sodium metasilicate을 설계조건에 따라 혼합 제조된 전해질 용액을 이용하여 플라즈마 전해 산화법으로 표면 코팅을 실시하였다. 각 시편의 플라즈마 전해시 전압은 280V로 인가하였고, 전류밀도는 70mA로 정전류를 공급하여 해당 인가전압 도달 후 3분 동안 정전압 방식을 유지하였다. 코팅된 피막 표면을 주사전자현미경과 X-선 회절분석을 통하여 미세구조 및 결정상을 관찰하였다. 또한 코팅된 표면의 생체활성 평가는 정량적으로 평가하기 위해 동전위시험과 AC 임피던스를 통하여 시행하였다. 분극거동을 확인하기 위해 potentiostat (Model PARSTAT 2273, EG&G, USA)을 이용하여 구강 내 환경과 유사한 $36.5{\pm}1^{\circ}C$의 0.9 wt.% NaCl에서 실시하였다. 전기화학적 부식 거동은 potentiodynamic 방법으로 조사하였고 인가전위는 -1500 mV에서 2000 mV까지 분당 1.67 mV/min 의 주사속도로 인가하여 시험을 수행하였다. 임피던스 측정은 potentiostat (Model PARSTAT 2273, EG&G, USA)을 이용하였으며, 측정에 사용한 주파수 영역은 10mHz ~ 100kHz 까지의 범위로 하여 조사하였고 ZSimWin(Princeton applied Research, USA) 소프트웨어를 사용하여 용액의 저항, 분극 저항 값을 산출하였다. 망간의 함량이 증가할수록 불규칙한 기공을 보였으며, 실리콘은 $TiO_2$ 산화막 형성을 저해하는 경향을 확인할 수 있었다. 단독으로 표면을 처리한 경우보다 두 가지 원소를 이용해 복합 표면처리를 시행한 경우가 내식성이 좋아 임플란트과의 골 유착에 긍정적인 영향을 미칠 것으로 사료된다.

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BaCeO3-BaZrO3 Solid Solution (BCZY) as a High Performance Electrolyte of Protonic Ceramic Fuel Cells (PCFCs) (BaCeO3-BaZrO3 고용체(BCZY) 기반 프로톤 세라믹 연료전지(PCFC)용 고성능 전해질 개발)

  • An, Hyegsoon;Shin, Dongwook;Choi, Sung Min;Lee, Jong-Ho;Son, Ji-Won;Kim, Byung-Kook;Je, Hae June;Lee, Hae-Weon;Yoon, Kyung Joong
    • Journal of the Korean Ceramic Society
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    • v.51 no.4
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    • pp.271-277
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    • 2014
  • To overcome the limitations of the solid oxide fuel cells (SOFCs) due to the high temperature operation, there has been increasing interest in proton conducting fuel cells (PCFCs) for reduction of the operating temperature to the intermediate temperature range. In present work, the perovskite $BaCe_{0.85-x}Zr_xY_{0.15}O_{3-\delta}$ (BCZY, x = 0.1, 0.3, 0.5, and 0.7) were synthesized via solid state reaction (SSR) and adopted as an electrolyte materials for PCFCs. Powder characteristics were examined using X-ray diffraction (XRD), thermogravimetric analysis (TGA) and Brunauer, Emmett and Teller (BET) surface area analysis. Single phase BCZY were obtained in all compositions, and chemical stability was improved with increasing Zr content. Anode-supported cell with $Ni-BaCe_{0.55}Z_{0.3}Y_{0.15}O_{3-\delta}$ (BCZY3) anode, BCZY3 electrolyte and BCZY3-$Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-\delta}$ (BSCF) composite cathode was fabricated and electrochemically characterized. Open-circuit voltage (OCV) was 1.05 V, and peak power density of 370 ($mW/cm^2$) was achieved at $650^{\circ}C$.

Si 함유 다이아몬드상 카본 필름의 환경 변화에 따른 마찰거동 연구

  • 박세준;이광렬;공호성;양승호
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.126-126
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    • 2000
  • 다이아몬드상 카본(DLC) 필름은 경도가 높고, 마찰계수가 낮다는 장점을 가지고 있기 때문에 내마모성 코팅이나 윤활성코팅에 응용을 위한 연구가 활발히 진행중이다. 하지만 마찰계수가 주변환경에 매우 큰 영향을 받는다는 단점이 있다. 이러한 단점은 DLC필름의 응용에 대한 저해 요인이 되며, 이 점을 보완하기 위해서 DLC 필름에 Si을 첨가하는 연구들이 진행되고 있다. 본 실험에서는 r.f-PACVD 법을 이용하여 Si이 첨가된 DLC 필름의 주위 환경 변화에 따른 마찰특성의 변화를 연구하였다. 사용한 반응 가스는 벤젠(C6H)과 희석된 Silane(SiH4 : H2 = 10 : 90)이며, 희석된 Silane과 벤젠의 첨가비율을 조절하여 필름내 Si의 함량을 조절하였고, 증착시 바이아스의 전압은 -400V로 하였다. 마찰테스트는 Ball-on-Disk type의 조건에서 대기, 건조공기, 진공의 세가지 분위기에서 마찰테스트를 실행하였다. 실험결과 마찰계수는 건조공기, 대기, 진공의 순으로 증가하였고, 필름내에 포함되어 있는 Si의 양이 증가할수록 마찰계수는 낮고 안정한 값을 나타내었다. Tribochemiacal 분석과, ball과 track의 전자현미경 사진 분석 결과, 진공에 비해서 건조공기와 대기중에서 마찰계수가 낮은 것은 DLC 필름내에 마모 track 중심부에 Si-C-O 계의 화합물이 형성되어, 이 화합물이 마찰계면에 존재하여 마찰계수를 낮추었음을 확인하였다. 그리고 대기중에서 실험한 경우, 습기의 존재로 인해 마모입자가 볼의 표면에서 엉김으로써 건조공기의 상태에서 보다 높은 마찰저항을 갖게 됨으로 인하여 마찰계수가 높아짐을 알 수 있었다.a)는 as-deposit 상태이며, 그림 1(b)는 45$0^{\circ}C$, 60min 열처리한 plan-view TEM 사진이다.dical의 영향을 조사하였으며 oxygen radical의 rf power에 따른 변화는 OES(Optical emission spectroscopy)를 사용하였다. 너무 적은 oxygen ion beam flux나 oxygen radical은 film의 전도도 및 투과도를 저하시켰고 반면 너무 과도한 flux의 증가 시는 전도도는 감소하였고 투과도는 증가하는 경향을 보였다. 기판에 도달하는 oxygen ion flux는 faraday cup을 이용하여 측정하였으며 증착된 ITO film은 XPS, UV-spectrometer, 4-point probe를 이용하여 분석하였다. 때문으로 생각되어진다. 또한, 성장 온도가 낮아짐에 따라 AlGaN의 성장을 저해하기 때문으로 판단된다. 성장 온도 변화에 따라 성장된 V의 구조적 특성 및 표면 거칠기 변화를 관찰하여 AlGaN의 성장 거동을 논의하겠다.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품

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Crystallographic orientation modulation of ferroelectric $Bi_{3.15}La_{0.85}Ti_3O_{12}$ thin films prepared by sol-gel method (Sol-gel법에 의해 제조된 강유전체 $Bi_{3.15}La_{0.85}Ti_3O_{12}$ 박막의 결정 배향성 조절)

  • Lee, Nam-Yeal;Yoon, Sung-Min;Lee, Won-Jae;Shin, Woong-Chul;Ryu, Sang-Ouk;You, In-Kyu;Cho, Seong-Mok;Kim, Kwi-Dong;Yu, Byoung-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.851-856
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    • 2003
  • We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.

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Effect of Ga Addition on the Electrical and Structural Properties of (Zn,Mg)O Transparent Electrode Films (Ga 첨가량이 (Zn,Mg)O 투명전극 막의 전기적, 결정학적 특성에 미치는 영향)

  • Suh, Kwang-Jong;Wakahara, Akihiro;Yoshida, Akira
    • Korean Journal of Materials Research
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    • v.15 no.8
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    • pp.491-495
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    • 2005
  • (Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

Two novel mutations in ALDH18A1 and SPG11 genes found by whole-exome sequencing in spastic paraplegia disease patients in Iran

  • Komachali, Sajad Rafiee;Siahpoosh, Zakieh;Salehi, Mansoor
    • Genomics & Informatics
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    • v.20 no.3
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    • pp.30.1-30.9
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    • 2022
  • Hereditary spastic paraplegia is a not common inherited neurological disorder with heterogeneous clinical expressions. ALDH18A1 (located on 10q24.1) gene-related spastic paraplegias (SPG9A and SPG9B) are rare metabolic disorders caused by dominant and recessive mutations that have been found recently. Autosomal recessive hereditary spastic paraplegia is a common and clinical type of familial spastic paraplegia linked to the SPG11 locus (locates on 15q21.1). There are different symptoms of spastic paraplegia, such as muscle atrophy, moderate mental retardation, short stature, balance problem, and lower limb weakness. Our first proband involves a 45 years old man and our second proband involves a 20 years old woman both are affected by spastic paraplegia disease. Genomic DNA was extracted from the peripheral blood of the patients, their parents, and their siblings using a filter-based methodology and quantified and used for molecular analysis and sequencing. Sequencing libraries were generated using Agilent SureSelect Human All ExonV7 kit, and the qualified libraries are fed into NovaSeq 6000 Illumina sequencers. Sanger sequencing was performed by an ABI prism 3730 sequencer. Here, for the first time, we report two cases, the first one which contains likely pathogenic NM_002860: c.475C>T: p.R159X mutation of the ALDH18A1 and the second one has likely pathogenic NM_001160227.2: c.5454dupA: p.Glu1819Argfs Ter11 mutation of the SPG11 gene and also was identified by the whole-exome sequencing and confirmed by Sanger sequencing. Our aim with this study was to confirm that these two novel variants are direct causes of spastic paraplegia.

Quantitative Structure-Toxicity Relationships (QSTRs) of Fungicidal Phenylthionocarbamate Derivatives (살균성, Phenylthionocarbamate 유도체들의 정량적인 구조와 독성과의 관계)

  • Sung, Nack-Do;Yang, Sook-Young;Park, Kwaun-Yong
    • Korean Journal of Agricultural Science
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    • v.28 no.1
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    • pp.33-40
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    • 2001
  • The authors attempted to derive a comprehensive quantitative structure-toxicity relationships (QSTRs) between various physicochemical parameters of phenyl substituents in fungicidal phenylthionocarbamate derivatives and toxicity evaluated using TOPKAT calculation. On the basis of this approach we made preditions for toxicity values for not yet tested substances with respect to these systems. The results suggested that the optimal values, $(B_2)_{opt.}=1.54_{\AA}$(Ames mutagenicity), $(R)_{opt.}=0.16$ (car-cinogenicity of male rat), $(\pi)_{opt.)=0.16$ (carcinogenicity of male mouse), $({\varepsilon}LOMO)_{opt}=-0.52e.v.$ ($LD_{50}$ of rat oral), $(B_3){opt.}=1.54_{\AA}$(chronic LOAEU), $(logP)_{opt.}=4.25$ ($LC_{50}$ of Fathead minnow) and $({\sigma})_{opt}=-0.68$ ($EC_{50}$ of Daphnia magna) of phenyl substituents were strongly correlated with the acute and chronic toxicities.

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