• Bulletin of the Korean Chemical Society
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• v.4 no.2
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• pp.79-83
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• 1983

The structure of thiamphenicol, one of the congeners of chloramphenicol which is a well-known antibiotic, has been determined by single crystal x-ray diffraction techniques. The crystal structure was determined using diffractometer data obtained by the $2{\theta}:{\omega}$ scan technique with $MoK{\alpha}$ radiation from a crystal having space group symmetry $P2_{1}2_{1}2_{1}$, and unit cell parameters a = 5.779, b = 15.292 and c = 17.322 ${\AA}$ . The structure was solved by direct methods and refined by least squares to an R = 0.070 for the 2116 reflections. The overall V-shaped conformation of thiamphenicol revealed in this study is consistent with those from the crystallographic studies and the proposed models from the theoretical and nmr studies of chloramphenicol. However there is no intramolecular hydrogen bond and the propanediol moiety is fully extended in the thiamphenicol molecule, while the crystal structures of chloramphenicol show the existence of the hydrogen bond between the two hydroxyl groups of the propanediol moiety forming an acyclic ring. All of the thiamphenicol molecules in the crystal are linked by a threedimensional hydrogen bonding network.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.309.2-309.2
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• 2014

산화아연은 넓은 밴드갭과 큰 엑시톤 에너지를 갖고 있어 광전자반도체 물질로 산화인듐주석의 대체물질로 유망하다. 그러나, 산화아연 박막 및 나노막대는 대부분 c-축 방향으로의 성장이 보고되고 있다. 하지만, c-축으로 성장하는 극성 산화아연은 자발분극과 압전분극을 갖으며 이는 quantum confinement Stark effect (QCSE)를 발생시킨다. 그러므로, 반극성과 무극성 산화아연의 연구가 활발히 진행 되고 있다. 더욱이, 산화아연 나노구조체는 넓은 표면적, 높은 용해도, 광범위한 적용분야 등의 이점으로 많은 연구가 이뤄지고 있다. 본 연구에서는 m-면 사파이어 기판 위에 원자층 증착법을 이용하여 비극성 산화아연의 박막을 형성 후 전기화학증착법을 이용하여 반극성 산화아연 막대를 성장하고 이에 대한 성장 메커니즘을 분석하였다. 반극성 (10-11) 산화아연 나노구조체를 성장하기 위하여 두 단계 공정을 이용하였다. 먼저 원자층 증착법을 이용하여 m-면 사파이어 기판 위에 60 nm의 산화아연 씨앗층을 $195^{\circ}C$에서 성장 하였다. X-선 회절분석을 통하여 m-면 사파이어 위에 성장한 산화아연 씨앗층이 무극성 (10-10)으로 성장한 것을 확인하였다. 무극성 산화아연 씨앗층 위에 나노구조체를 형성하기 위하여 전기화학 증착법을 이용하여 주 공정이 진행되었다. 전구체로는 질산아연헥사수화물 ($Zn(NO3)2{\cdot}6H2O$)과 헥사메틸렌테트라민을 ((CH2)6N4)을 사용하였다. 무극성 산화아연 기판을 질산아연헥사수화물과 헥사메틸렌테트라민을 용해한 전해질에 담근 뒤 $70^{\circ}C$에서 두시간 동안 -1.0V의 정전압을 인가하였다. SEM을 이용한 표면 분석에서 원자층 증착법을 이용해 성장한 무극성 산화아연 씨앗층 위에 산화아연 나노구조체를 성장 시, 한 방향으로 기울어진 반극성 산화아연 나노구조체가 성장하는 것이 관찰되었다. 산화아연 막대의 성장 시간에 따라 XRD를 측정한 결과, 성장 초기에는 매우 약한 $31.5^{\circ}$ (100), $34.1^{\circ}$ (002), $36^{\circ}$ (101) 부근의 피크가 관찰되는 반면, 성장 시간이 증가함에 따라 강한 $36^{\circ}$ 부근의 피크가 관찰되는 X-선 회절 분석 결과를 얻을 수 있었다. 이는, 성장 초기에는 여러 방향의 나노구조체가 성장하였지만 성장시간이 점차 증가함에 따라 (101) 방향으로 우선 성장되는 것을 확인하였다.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.95-98
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• 1998

We have developed new type of superconducting-superionic conducting nanohybrids, $Ag_xI_wBi_2Sr_2Ca_{n-1}Cu_nO_y$ (n=1 and 2) by applying the chimie douce reaction to the superconducting Bi-based cuprates. These nanohybrids can be achieved by the stepwise intercalation whereby the $Ag^+$ ion is thermally diffused into the pre-intercalated iodine sublattice of $IBi_2Sr_2Ca_{n-1}Cu_nO_y$. According to the X-ray diffraction analysis, the Ag-I intercalates are found to have an unique heterostructure in which the superionic conducting Ag-I layer and the superconducting $IBi_2Sr_2Ca_{n-1}Cu_nO_y$ layer are regularly interstratified with a remarkable basal increment of ~7.3$\AA$. The systematic XAS studies demonstrate that the intercalation of Ag-I accompanies the charge transfer between host and guest, giving rise to a change in hole concentration of $CuO_2$ layer and to a slight $T_c$ change. The Ag K-edge EXAFS result reveals that the intercalated Ag-I has a $\beta$-AgI-like local structure with distorted tetrahedral symmetry, suggesting a mobile environment for the intercalated $Ag^+$ ion. In fact, from ac impedance analyses, we have found that the Ag-I intercalates possess a fast ionic conductivity ($\sigma_i=10^{-1.4}\sim 10^{-2.6}\Omega^{-1}\textrm{cm}^{-1}\;at\;270^{\circ}C$ with an uniform activation energy ($\DeltaE_a=0.22\pm 0.02$ eV). More interesting finding is that these intercalates exhibit high electronic conducting as well as ionic ones ($t_i$=0.02~0.60) due to their interstratified structure consisting of superionic conducting and superconducting layers. In this respect, these new intercalates are expected to be useful as an electrode material in various electrochemical devices.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.271-274
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• 2005

We investigated the crystalline and electrical properties of ZnO thin films for transparent electrode as a function of the oxygen pressures during the deposition. The ZnO thin films were deposited on a flexible teflon substrates by the pulsed laser deposition. From the X-ray diffraction, ZnO films showed c axis oriented ZnO(0002) crystal structure. The FWHM (full width at half maximum) values decreased from $0.51^{\circ}\;to\;0.34^{\circ}$ as the oxygen pressure increased from 0.1 mTorr to 10.0 mTorr showing the improvement of crystallinity. The resistivity and hall mobility of ZnO film deposited at the oxgen pressure of 0.1 mTorr at $200^{\circ}C$ was about $5\times10^{-4}\Omega{\cdot}cm\;and\;20cm^2/V{\cdot}s$, respectively. The optical transmittance of the ZnO films on flexible teflon substrate was found to be above $85\%$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.99-99
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• 2003

The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.165-165
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• 2003

The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Journal of the Korean Electrochemical Society
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• v.9 no.1
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• pp.29-33
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• 2006

A new porous separator based on poly(vinyl chloride) (PVC)/poly(vinylidene fluoride-co-hexafluoro-propylene) (P(VdF-co-HFP)/poly(methyl methacrylate) (PMMA) was prepared by a phase inversion method. To enhance mechanical property, the membrane was stretched uniaxially at high temperature. Tensile strength and ionic conductivity were measured for various draw ratios. The tensile strength and ionic conductivity were increased with increasing draw ratio. The tensile strength of the separator reached 52MPa after stretching to draw ratio of 5, and the ionic conductivity of the separator was increased from $1.9Xs10^{-4}S/cm\;to\;4.6X10^{-4}S/cm\;at\;25^{\circ}C$. The stretched separator immersed in liquid electrolyte was electrochemically stable up to 4.7 V. The cell based on the stretched separator was maintained at about 99% of the initial discharge capacity after 10th cycle operation at 0.2C rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.280-286
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• 2010

We have investigated the influence of rapid thermal annealing (RTA) temperature on properties of Al-doped zinc oxide (AZO) thin films deposited on glass substrate by using radio-frequency magnetron sputtering. The RTA is performed in a nitrogen ambient in the temperature range from 300 to $600^{\circ}C$ for 1 minute in a rapid thermal annealer after growing the AZO thin films. The crystallographic structure and the surface morphology of AZO thin film are measured by using X-ray diffraction, and atomic force microscopy and scanning electron microscopy, respectively. The optical transmittance of the deposited thin films is examined in the wavelength range of 300-1100 nm, where the average transmittance is above the 90% in the visible and near-infrared regions. The optical bandgap is calculated from the Tauc's model, and it shows a significant dependence on the RTA temperature. As for the electrical properties of the thin films, the AZO thin film annealed at $400^{\circ}C$ shows the lowest electrical resistivity of $8.6{\times}10^{-3}{\Omega}cm$ and the Hall mobility of $11.3cm^2$/V-sec. These results suggest that the RTA temperature is an important parameter to influence on the structural, electrical, and optical properties of AZO thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.116-119
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• 2002

A different route to the synthesis of $Eu^{3+}$ - activated matrices such as $YAlO_{3}$ and $GdAlO_{3}$ and luminiscent properties of these compounds, were studied. The new route (Combustion method) consist of the redox reactions between the respective metal nitrates and urea in a preheated furnace at ${500^{\circ}C}$. The Phosphor thus obtained were then heated at ${1000^{\circ}C}$ for 2-3 hours to get better luminiscent properties. The incorporation of $Eu^{3+}$ activator in these phosphors were checked by luminiscence investigations. Scanning electron microscopy (SEM) studies were carried out to understand surface morphological features and the particle size. X-ray energy dispersive analysis (EDAX) was also performed for the qualitative analysis of the phosphors.

• Ocean and Polar Research
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• v.33 no.3
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• pp.265-280
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• 2011

The temporal dynamics of the meiofauna community in Marian Cove, King George Island, Antarctica were observed from March 7 to December 21 2007. Nine meiofauna taxa were found, with nematodes the most dominant group, making up 92.97% of the total meiofauna density, followed by harpacticoid copepods (3.18%). Meiofauna abundance ranged from 123 to 874 individuals per 10 $cm^2$ (mean 464 inds.10 $cm^{-2}$), which is lower than that found in some polar and temperate regions. The lowest meiofauna abundance was found in the 26th April sample (III) and the highest meiofauna abundance was found in the March 23rd sample (II). There was no correlation between meiofauna abundance and season. The seasonal changes were likely caused by meltwater runoff, and there were the physical disturbances on the bottom sediment by huge iceberg. Biomass of meiofauna varied between 20.36 and 101.02 ${\mu}gC{\cdot}10\;cm^{-2}$, and overall mean biomass was 54.17 ${\mu}gC{\cdot}10\;cm^{-2}$ during the study periods. More than 80% of meiofauna was concentrated in the upper 2 cm of the sediment, and density decreased with depth. The mean diversity index was 0.37, and the ratio between the abundance of nematodes: and harpacticoids (N/C) ratio ranged from 7.31 to 95.04 (mean 26.39). NMDS analysis divided the community into three groups: A (III, IV, V, VII, VIII), B (II, IX, XI, XII) and C (I, V, X). The results of ANOSIM and SIMPER analysis revealed significant differences in community structure among three groups and major contributed meiofauna taxon in grouping were nematodes and copepods. No significant correlations were observed between major meiofauna taxon and environmental factors. Thirteen species in 12 genera representing nine families of harpacicoids were recorded. Ancorabolidae was the most diverse family, and Heteropsyllidae was the most abundant. The correlation analysis between benthic harpacticoid copepods and environmental factors showed that some species were affected by water temperature, sediment temperature, salinity, chlorophyll a concentration, grain size of the sediments and heavy metal contents of the sediments. These data describe the usefulness of benthic harpacticoid copepods as biological indicator species in Antarctic regions.