• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.5
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• pp.19-26
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• 1972

A newly developed quartz frequency modulator utili3ing a V. V. C. diode is briefly described. Its electrical characteristics-including modulation linearity, modulation distortion, and carrier frequency stability depending upon the variation of the environmental temperature and the applied power voltage, etc.-are suitable for the modulator of a mobile or a portable F.M. transmitter according to the experimental results. The excellent over-all electrical characteristics were proved from the experimental development of the two kinds of transceivers. One is the single channal transceiver which contains a direct frequency modulator at the carrier frequency of 52.750 MHg. The other is the dual channel transceiver (the frequencies are selected from about 40 channels without tuning adjustment) whose operational frequency is composed of a modulated frequency of 10.7 MHz and the frequency generated at a channel control oscillator, As mentioned above, it is realized that the electrical characteristics of this modulation method are suitable for portable F. M. transceivers.

• Journal of applied mathematics & informatics
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• v.35 no.1_2
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• pp.121-130
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• 2017

This study is concerned with the existence of positive solution for the following nonlinear elliptic system $$\{-M_1(\int_{\Omega}{\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^pdx)div({\mid}x{\mid}^{-ap}{\mid}{\nabla}u{\mid}^{p-2}{\nabla}u)\\{\hfill{120}}={\mid}x{\mid}^{-(a+1)p+c_1}\({\alpha}_1A_1(x)f(v)+{\beta}_1B_1(x)h(u)\),\;x{\in}{\Omega},\\-M_2(\int_{\Omega}{\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^qdx)div({\mid}x{\mid}^{-bq}{\mid}{\nabla}v{\mid}^{q-2}{\nabla}v)\\{\hfill{120}}={\mid}x{\mid}^{-(b+1)q+c_2}\({\alpha}_2A_2(x)g(u)+{\beta}_2B_2(x)k(v)\),\;x{\in}{\Omega},\\{u=v=0,\;x{\in}{\partial}{\Omega},$$ where ${\Omega}$ is a bounded smooth domain of ${\mathbb{R}}^N$ with $0{\in}{\Omega}$, 1 < p, q < N, $0{\leq}a$ < $\frac{N-p}{p}$, $0{\leq}b$ < $\frac{N-q}{q}$ and ${\alpha}_i,{\beta}_i,c_i$ are positive parameters. Here $M_i,A_i,B_i,f,g,h,k$ are continuous functions and we discuss the existence of positive solution when they satisfy certain additional conditions. Our approach is based on the sub and super solutions method.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.530-533
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• 1998

In this paper, a new scheme of a boosted voltage generator (BVG) is designed for low powr DRAM's. The designed BVG can supply stable $V_{pp}$ using a new circuit operting method. This method controls charge pumping capability by switching the supply voltage and ring oscillator frequency of driving circuit, so the BVG can save area and reduce the powr dissipation during $V_{pp}$ maintaining period. The charge pumping circuit of the BVG suffers no $V_{T}$ loss and is to be applicable to low-voltage DRAM's. $V_{pp}$ level detecting circuit can detect constant value of $V_{pp}$ against temperature variation. The level of $V_{pp}$ varies -0.55%~0.098% during its maintaining period. Charge pumping circuit can make $V_{pp}$ level up to 2.95V with $V_{cc}$ =1.5V. The degecting level of $V_{pp}$ level detecting circuit changes -0.34% ~ 0.01% as temperature varies from -20 to 80.deg. C. The powr dissipation during V.$_{pp}$ maintaining period is 4.1mW.W.1mW.

• Journal of Korean Society for Quality Management
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• v.25 no.2
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• pp.15-27
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• 1997

This paper describes a highly accelerated life test (HALT, USPCBT) method for rapid qualification testing of STH PWB(Silver Through Hole Printed Wiring Boards). This method was carried out to be an alternative to the present time-consuming standard 1344 hours life testing(THB). The accelerated life test conditions were $121^{\circ}C$/95%R.H. at 50V bias and without bias. Their results are compared with those observed in the standard 1344 hours life test at $40^{\circ}C$/95%R.H. at 50V bias and without bias. The studies were focused on the samples time-to-failure as well as the associated conduction and failure mechanisms. The abrupt drop of insulation resistance is due to the absorption of water vapour. And the continuous drop of insulation resistance is due to the Ag migration. The ratios of time-to-failure of HALT(USPCBT) to THB were 25 and 11 at 50V bias and without bias respectively.

• Journal of Sericultural and Entomological Science
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• v.35 no.1
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• pp.73-76
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• 1993

Adding a non-fluorescent dye, Rhodamine-B, to the adult diet of uzi fly, Exorista bombysis (Louis) has shown to be a useful method for marking the eggs for flight range experiments. The method is timesaving and the dye is safe to handle and the marked eggs are easy to detect. Files fed on the diet added with dye did not have much negative effect on adult mortality and fecundity, but egg hatchability was affected.

• Food Science and Preservation
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• v.11 no.3
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• pp.319-324
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• 2004

The antimicrobial activity of the extract of citrus peel prepared by the method of hot water, ethanol and sugar was examined. The results showed that the extract of citrus peel prepared by hot water or ethanol did not have antimicrobial activity, but the extract by 10$\%$(w/v) sugar revealed the high antimicrobial activity. Extracted in 10%(w/v) sugar solution for 9 days, showed the highest antimicrobial activity against 8 strains of bacteria. The minimum inhibition concentration was found to be 0.5$\%$(v/v) against S. aureus, 1.5$\%$(v/v) against B. subtilis, M. luteus and E. coli, and 2.0$\%$(v/v) against S. mutans. The antimicrobial activity of the citrus peel extract was stable regardless of the treatment at 40 $\~$ 100 $^{\circ}C$C for 20 min and unstable response to the change of pH. The results suggested the development of citrus peel as heat-stable antimicrobial agents.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1322_1323
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• 2009

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.117-118
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• 2008

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1248-1249
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• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were 38.11, with a dielectric loss of 0.134, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films annealed at 400$^{\circ}C$ were about -3.15%/K.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.961-963
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• 2000

Most of the application standard of the low-voltage devices have applied one the IEC standard another the UL standard. European union applied the IEC60947-1 standard has not exceed 1000V a.c. or 1500V d.c.. Therefore. it is necessary to the low-voltage device has expended for rated operational voltage with our products. The export of European market shall be made for the CE-Marking in accordance with IEC60947-1 ( Low-voltage switchgear and controlgear). We shall be considered for the requirement with the IEC standard. In this time to study for power supply system at EU ( European union. At that time for design and development in order to the construction and test method among the study for the rated insulation voltage at less then 690V.