• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• 한국통신학회논문지
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• 제23권4호
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• pp.988-996
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• 1998

BN 세라믹에 소결조제로 0.07wt% $V_{2}O_{5}$ 와 0.03wt% CuO을 첨가 하였을 때(BNC3V7) Ag 전극과 동시 소성이 가능한 $900^{\circ}C$ 소결할 수 있었다. 이때 BNC3V7 시편은 유전상수 44.3 $Qxf_{o}$값 22,000 GHz, TCF 값 ppm$/^{\circ}C$의 유전특성을 얻을 수있었다. PCS대역에서 사용 가능한 적층칩 대역 필터를 기존의 방법과 태핑기법에 의한 2가지 방법으로 설계하였다. 입출력 태핑 기법을 이용하여 필터를 제조할 경우 입출력 커플링을 이용한 기존방법에 비해 layer를 감소시킬 수 있어 구조가 간단해진다는 장점이 있다. 적층칩 대역 필터는 Tape casting한 후 Ag전극을 이용하여 Screen printing하여 제작 하였다. 제작된 필터는 $900^{\circ}C$에서 소결하여 설계된 필터와 특성 값을 비교 하였다. 태핑된 칩 필터와 기존 칩 필터 모두 중심주파수는 90MHz 낮은 주파수 대역으로 이동 하였지만 대역 통과 특성은 설계 값과 유사 하였다. 태핑된 칩 필터의 스퓨리어스 특성은 기존 칩 필터에 비해 향상되었다.

• Nuclear Engineering and Technology
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• 제23권4호
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• pp.420-425
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• 1991

SNU 1.5-MV 직렬형 반데그라프 가속기의 헬륨음이온원으로서 Rb 전하교환기를 제작하였다. 교환기의 최적운전조건을 결정하기 위해 특성실험을 수행하였다. Duoplasmatron 이온원에서 인출된 1~10 keV 에너지의 첼륨양이온빔을 Rb 증기속에 통과시킴으로써 2 단계 전하교환반응, 즉 $He^{+}\;+\;Rb\;{\rightarrow}\;He^{\circ\ast}\;+\;Rb^{+}\;과\;He^{\circ\ast}\;+\;Rb\;{\rightarrow}\;He^{-}\;+\;Rb^{+}$에 의해 헬륨음이온을 얻었다 실험결과로부터 헬륨음이온의 최대생성률이 헬륨양이온에너지가 7 keV일때 얻어짐을 알 수 있었다. Oven과 Canal의 최적온도는 각각 $370^{\circ}C{\;}와\;95^{\circ}C$로 결정되었다. 최적동작조건하에서 최대 헬륨음이온 생성률은 $2.42\pm002\;%$이었다. 본 전하교환기는 헬륨음이온생성에 효과적인 장치임이 입증되었다.

• 한국세라믹학회지
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• 제38권4호
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• pp.380-387
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• 2001

140$0^{\circ}C$ 환원 분위기(질소-수소) 조건에서 열처리하여 반도성 SrTiO$_3$하소분말을 제조하였다. 하소분말을 이용하여 135$0^{\circ}C$에서 2시간동안 상압 소결하여 소결체를 제조하였으며, 이때 소결 분위기에 따른 소결체 입계의 전기적 특성을 고찰하였다. 이들 소결체는 전형적인 바리스터 특성을 나타내었으며, 특히 소결 분위기를 질소-수소로부터 공기로 변화시킴에 따라서 소결체의 문턱 전압, 입계 비저항 그리고 입계 전위 장벽은 430V/cm, 10MΩ.cm 그리고 2.0$\times$$10^{-3}$eV로부터 1000V/cm 이상, 240 MΩ.m 그리고 1.1eV로 변하였다.

• Corrosion Science and Technology
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• 제8권2호
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• pp.89-92
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• 2009

Pure Ti as well as Ti-6Al-4V alloy exhibit excellent properties for dental implant applications. However, for a better biocompatibility it seems important to avoid in the composition the presence of V due to the toxic effects of V ion release. Thus Al and V free and composed of non-toxic element such as Nb, Zr alloys as biomaterials have been developed. Especially, Zr contains to same family in periodic table as Ti. The addition of Zr to Ti alloy has an excellent mechanical properties, good corrosion resistance, and biocompatibility. In this study, the electrochemical characteristics of Ti-Zr alloys for biomaterials have been investigated using by electrochemical methods. Methods: Ti-Zr(10, 20, 30 and 40 wt%) alloys were prepared by arc melting and homogenized for 24 hr at $1000^{\circ}C$ in argon atmosphere. Phase constitutions and microstructure of the specimens were characterized by XRD, OM and SEM. The corrosion properties of the specimens were examined through potentiodynamic test (potential range of -1500 ~ 2000 mV), potentiostatic test (const. potential of 300 mV) in artificial saliva solution by potentiostat (EG&G Co, PARSTAT 2273. USA).

• BMB Reports
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• 제32권4호
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• pp.409-413
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• 1999

The cDNA encoding CMP-NeuAc:lactosylceramide ${\alpha}2$,3-sialyltransferase (GM3 synthase) was isolated from a human fetal brain cDNA library using sequence information obtained from amino acid sequences found in the conserved regions of the previously-cloned mouse GM3 synthase (mST3Gal V) and human sialyltransferases. The cDNA sequence included an open reading frame coding for 362 amino acids, and the primary structure of this enzyme predicted all the structural features characteristic of other sialyltransferases, including a type II membrane protein topology and both sialylmotifs. Comparative analysis of this cDNA with mST3Gal V showed 85% and 86% identity of the nucleotide and amino acid residues, respectively. The expression of this gene is highly restricted in both human fetal and adult tissues.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.139-143
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• 2005

For application of carbon nano-tube (CNT) as a counter electrode materials of dye-sensitized solar cell (DSSC), the electrochemical behavior of CNT electrode was studied, employing cyclic-voltammetry (C-V) and impedance spectroscopy. Fabrication of CNT-paste and formation of CNT-counter electrode for characteristic measurement have been carried out using ball-milling and doctor blade process, respectively. Unit cell for measurements was assembled using Pt electrode, CNT electrode, and iodine-embedded electrolyte. Field emission-scanning electron microscopy (FE-SEM) was used for structural investigation of CNT powder and electrode. Sheet resistance of electrode was measured with 4-point probe method. Electrochemical properties of electrode, C-V and impedance spectrum, were studied, employing potentiogalvanostat (EG&G 273A) and lock in amplifier (EG&G 5210). As a results, the sheet resistance of CNT electrode is almost similar to that of F-doped SnO2 (FTO) coated glass substrate as approximately 10 ohm/sq. From C-V and impedance spectroscopy measurements, it was found that CNT electrode has high reaction rate and low interface reaction resistance between CNT surface and electrolyte. These results provides that CNT electrode were superior to that of conventional Pt electrode. Particularly, the reaction rate in the CNT electrode is about thrice high than Pt electrode. Therefore. CNT electrode is to be good candidate material for counter electrode in DSSC.

• 한국재료학회지
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• 제15권2호
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• 전기전자학회논문지
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• 제22권1호
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• pp.180-184
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• 2018

산화갈륨 ($Ga_2O_3$)과 탄화규소 (SiC)는 넓은 밴드 갭 ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV)과 높은 임계전압을 갖는 물질로서 높은 항복 전압을 허용한다. 수직 DMOSFET 수평구조에 비해 높은 항복전압 특성을 갖기 때문에 고전압 전력소자에 많이 적용되는 구조이다. 본 연구에서는 2차원 소자 시뮬레이션 (2D-Simulation)을 사용하여 $Ga_2O_3$와 4H-SiC 수직 DMOSFET의 구조를 설계하였으며, 항복전압과 저항이 갖는 trade-off에 관한 파라미터를 분석하여 최적화 설계하였다. 그 결과, 제안된 4H-SiC와 $Ga_2O_3$ 수직 DMOSFET구조는 각각 ~1380 V 및 ~1420 V의 항복 전압을 가지며, 낮은 게이트 전압에서의 $Ga_2O_3-DMOSFET$이 보다 낮은 온-저항을 갖고 있지만, 게이트 전압이 높으면 4H-SiC-DMOSFET가 보다 낮은 온-저항을 갖을 수 있음을 확인하였다. 따라서 적절한 구조와 gate 전압 rating에 따라 소자 구조 및 gate dielectric등에 대한 심화 연구가 요구될 것으로 판단된다.

• Advances in nano research
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• 제12권1호
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• pp.25-35
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• 2022

Within the framework of the density functional theory combined with the method of non-equilibrium Green's functions (DFT + NEGF), the features of electron transport in fullerene nanojunctions, which are «core-shell» nanoobjects made of a combination of fullerenes of different diameters C₂₀, C₈₀, C₁₈₀, placed between gold electrodes (in a nanogap), are studied. Their transmission spectra, the density of state, current-voltage characteristics and differential conductivity are determined. It was shown that in the energy range of -0.45-0.45 eV in the transmission spectrum of the "Au-C₁₈₀-Au" nanojunction appears a HOMO-LUMO gap with a width of 0.9 eV; when small-sized fullerenes C₂₀, C₈₀ are intercalation into the cavity C₁₈₀ the gap disappears, and a series of resonant structures are observed on their spectra. It has been established that distinct Coulomb steps appear on the current-voltage characteristics of the "Au-C₁₈₀-Au" nanojunction, but on the current-voltage characteristics "Au-C₈₀@C₁₈₀-Au", "Au-(C₂₀@C₈₀)@C₁₈₀-Au" these step structures are blurred due to a decrease in Coulomb energy. An increase in the number of Coulomb features on the dI/dV spectra of core-shell fullerene nanojunctions was revealed in comparison with nanojunctions based on fullerene C₆₀, which makes it possible to create high-speed single-electron devices on their basis. Models of single-electron transistors (SET) based on fullerene nanojunctions "Au-C₁₈₀-Au", "Au-C₈₀@C₁₈₀-Au" and "Au-(C₂₀@C₈₀)@C₁₈₀-Au" are considered. Their charge stability diagrams are analyzed and it is shown that SET based on C₈₀@C₁₈₀-, (C₂₀@C₈₀)@C₁₈₀- nanojunctions is output from the Coulomb blockade mode with the lowest drain-to-source voltage.