• Title/Summary/Keyword: C-V characteristic

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Application of CE-QUAL-W2 [v3.2] to Andong Reservoir: Part I: Simulations of Hydro-thermal Dynamics, Dissolved Oxygen and Density Current

  • Bhattarai, Prasid Ram;Kim, Yoon-Hee;Heo, Woo-Myoung
    • Korean Journal of Ecology and Environment
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    • v.41 no.2
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    • pp.247-263
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    • 2008
  • A two-dimensional (2D) reservoir hydrodynamics and water quality model, CE-QUAL-W2, is employed to simulate the hydrothermal behavior and density current regime in Andong Reservoir. Observed data used for model forcing and calibration includes: surface water level, water temperature, dissolved oxygen and suspended solids concentration. The model was calibrated to the year of 2003 and verified with continuous run from 2000 till 2004. Without major adjustments, the model accurately simulated surface water levels including the events of large storm. Deep-water reservoirs, like Andong Reservoir, located in the Asian Monsoon region begin to stratify in summer and overturn in fall. This mixing pattern as well as the descending thermocline, onset and duration of stratification and timing of turnover phenomenon were well reproduced by the Andong Model. The temperature field and distinct thermocline are simulated to within $2^{\circ}C$ of observed data. The model performed well in simulating not only the dissolved oxygen profiles but also the metalimnetic dissolved minima phenomenon, a common1y occurring phenomenon in deep reservoirs of temperate regions. The Root Mean Square Error (RMSE) values of model calibration for surface water elevation, temperature and dissolved oxygen were 0.0095 m, $1.82^{\circ}C$, and $1.13\;mg\;L^{-1}$, respectively. The turbid storm runoff, during the summer monsoon, formed an intermediate layer of about 15 m thickness, moved along the metalimnion until being finally discharged from the dam. This mode of transport of density current, a common characteristic of various other large reservoirs in the Asian summer monsoon region, was well tracked by the model.

Development of Plasma Assisted ALD equipment and Electrical Characteristic of TaN thin film deposited PAALD method (Plasma Assisted ALD 장비 계발과 PAALD법으로 증착 된 TaN 박막의 전기적 특성)

  • Do Kwan Woo;Kim Kyoung Min;Yang Chung Mo;Park Seong Guen;Na Kyoung Il;Lee Jung Hee;Lee Jong Hyun
    • Journal of the Semiconductor & Display Technology
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    • v.4 no.2 s.11
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    • pp.39-43
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    • 2005
  • In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

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Effect of Alloying on the Microstructure and Fatigue Behavior of Fe-Ni-Cu-Mo P/M Steels

  • Bohn, Dmitri A.;Lawley, Alan
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 1997.04a
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    • pp.34-34
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    • 1997
  • The effect of alloying mode and porosity on the axial tension-tension fatigue behavior of a P/M steel of nominal composition Fe-4w/o Ni-1.5w/o Cu-O.5w/o Mo-O.5w/o C has been evaluated. Alloying modes utilized were elemental powder mixing, partial alloying(distaloy) and prealloying by water atomization; in each case the carbon was introduced as graphite prior to sintering. Powder compacts were sintered($1120{\circ}C$/30 min.) in 7Sv/o $H_2$/25v/o $N_2$ to densities in the range 6.77-7.2 g/$cm^3$. The dependence of fatigue limit response on alloying mode and porosity was interpreted in terms of the constituent phases and the pore and fracture morphologies associated with the three alloying modes. For the same nominal composition, the three alloying modes resulted in different sintered microstructures. In the elemental mix alloy and the distaloy, the major constituent was coarse and fine pearlite, with regions of Ni-rich ferrite, Ni-rich martensite and Ni-rich areas. In contrast, the prealloy consisted primarily of martensite by with some Ni-rich areas. From an examination of the fracture surfaces following fatigue testing it was concluded that essentially all of the fracture surfaces exhibited dimpled rupture, characteristic of tensile overload. Thus, the extent of growth of any fatigue cracks prior to overload was small. The stress amplitude for the three alloying modes at 2x$l0^6$ was used for the comparison of fatigue strengths. For load cycles <3x$l0^5$, the prealloy exhibited optimum fatigue response followed by the distaloy and elemental mix alloy, respectively. At load cycles >2x$l0^6$, similar fatigue limits were exhibited by the three alloys. It was concluded that fatigue cracks propagate primarily through pores, rather than through the constituent phases of the microstructure. A decrease in pore SIze improved the S-N behavior of the sintered steel.

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Characteristic Evaluation of Optically Stimulated Luminescent Dosimeter (OSLD) for Dosimetry (광유도발광선량계(Optically Stimulated Luminescent Dosimeter)의 선량 특성에 관한 고찰)

  • Kim, Jeong-Mi;Jeon, Su-Dong;Back, Geum-Mun;Jo, Young-Pil;Yun, Hwa-Ryong;Kwon, Kyung-Tae
    • The Journal of Korean Society for Radiation Therapy
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    • v.22 no.2
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    • pp.123-129
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    • 2010
  • Purpose: The purpose of this study was to evaluate dosimetric characteristics of Optically stimulated luminescent dosimeters (OSLD) for dosimetry Materials and Methods: InLight/OSL $NanoDot^{TM}$ dosimeters was used including $Inlight^{TM}MicroStar$ Reader, Solid Water Phantom, and Linear accelerator ($TRYLOGY^{(R)}$) OSLDs were placed at a Dmax in a solid water phantom and were irradiated with 100 cGy of 6 MV X-rays. Most irradiations were carried out using an SSD set up 100 cm, $10{\times}10\;cm^2$ field and 300 MU/min. The time dependence were measured at 10 minute intervals. The dose dependence were measured from 50 cGy to 600 cGy. The energy dependence was measured for nominal photon beam energies of 6, 15 MV and electron beam energies of 4-20 MeV. The dose rate dependence were also measured for dose rates of 100-1,000 MU/min. Finally, the PDD was measured by OSLDs and Ion-chamber. Results: The reproducibility of OSLD according to the Time flow was evaluated within ${\pm}2.5%$. The result of Linearity of OSLD, the dose was increased linearly up to about the 300 cGy and increased supralinearly above the 300 cGy. Energy and dose rate dependence of the response of OSL detectors were evaluated within ${\pm}2%$ and ${\pm}3%$. $PDD_{10}$ and PDD20 which were measured by OSLD was 66.7%, 38.4% and $PDD_{10}$ and $PDD_{20}$ which were measured by Ion-chamber was 66.6%, 38.3% Conclusion: As a result of analyzing characteration of OSLD, OSLD was evaluated within ${\pm}3%$ according to the change of the time, enregy and dose rate. The $PDD_{10}$ and $PDD_{20}$ are measured by OSLD and ion-chamber were evaluated within 0.3%. The OSL response is linear with a dose in the range 50~300 cGy. It was possible to repeat measurement many times and progress of the measurement of reading is easy. So the stability of the system and linear dose response relationship make it a good for dosimetry.

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Effect of Partially Oxidized Ti Powder on Electrical Properties and Microstructures of $BaTiO_3$-based Ceramics ($BaTiO_3$계 세라믹스의 전기적 성질과 미세조직에 미치는 부분산화 Ti 분말 첨가의 영향)

  • Kim, Jun-Gyu;Jo, Won-Seung;Park, Gyeong-Sun
    • Korean Journal of Materials Research
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    • v.10 no.10
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    • pp.671-676
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    • 2000
  • $BaTiO_3$-based ceramics with partially oxidized Ti powders were prepared by sintering at $1350^{\circ}C$ for 1 h in v vacuum, and then heated in air. In this study, the effect of partially oxidized Ti powders on electrical properties and microstructures of $BaTiO_3$-based ceramics was investigated. It was found out that the semiconductive $BaTiO_3$-based ceramics beζame to show excellent PTCR (more than $10^5$) characteristic by adding 5~7 vol% of partially oxidized Ti powder. Also, it was found out that the sintered compact had extremely porous and fine-grained microstructure. The relative density and grain size of sintered compact with 5 vol% of partially oxidized Ti powders were 54% and $1.3\;{\mu\textrm{m}}$, respectively. The mechanism for the development of PTCR characteristic in $BaTiO_3$-based ceramics with partially oxidized Ti powders due to the adsorption of oxygen at grain boundaries, and could be explained, based on Heywang model.

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Alterations of Cerebral Metabolic Activation Following Electro-Acupuncture Stimulation on ST36 and LR3 Acu-Points in Rats (흰쥐의 족삼리 및 태충 전침자극에 따른 뇌대사활성의 변화)

  • Sohn, Young-Joo;Jung, Hyuk-Sang;Ku, Ja-Seung;Won, Ran;Kim, Yong-Suk;Park, Young-Bae;Sohn, Nak-Won
    • Journal of Acupuncture Research
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    • v.19 no.1
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    • pp.159-174
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    • 2002
  • Objective : The meridian theory in oriental medicine explains that each acu-point has a characteristic functional effect. It will be supposed that an acupuncture stimulation on different acu-point evokes different activation on different areas in the central nervous system(CNS) according to the meridian theory. On this supposition, our group tried the semi-quantitative [14C]2-deoxyglucose([14C]2-DG) autoradiography on the acupuncture stimulation to the hindlimb acu-points of Sprague-Dawley rats. Methods : A venous catheter for the intravenous administration of isotope was equipped in the right external jugular vein on 3 days prior to the [14C]2-DG study. On the day of the study, two acupuncture needles were inserted into the ST36(Zusanli) or LR3(Taichong) on the left hindlimb. Electro-acupuncture stimulation (2 Hz, 5 ms, 1~3 mA, 15 minutes) started just before the i.v. injection of [14C]2-DG ($25{\mu}Ci/rat$). The brain and the spinal cord were removed and processed for the [14C] 2-DG autoradiography. Results : The EA stimulation on ST36 reveals over 120% metaboilc activation in Arcuate nucleus, Anterior pretectal nucleus, Dorsal cochlear nucleus, Interposed cerebellar nucleus, and Nucleus of Darkschewitsch. The EA stimulation on LR3 reveals over 120% metaboilc activation in Lateral habenula nucleus, Medial vestibular nucleus, Ventromedial thalamic nucleus, Anteroventral thalamic nucleus, Anterior cingulate cortex, Dentate gyrus, Antero cortical amygdaloid nucleus, Anterior pretectal nucleus, and Dorsal tegmental nucleus compared with the non EA stimulation control group. Conclusion : These results demonstrate that the different acu-points evoke the different activations in brain areas. And with this functional brain mapping study, a new scientific elucidation for the basis of the acupuncture-meridian theory in oriental medicine through differences of activated area in CNS according to the each acupuncture point.

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Phase Analysis of Mechanically Alloyed $\sigma$-VFe Alloy Powders by Neutron and X-ray Diffraction (기계적 합금화한 $\sigma$-VFe합금의 중성자 및 X선 회절에 의한 상분석)

  • Lee, Chung-Hyo;Jo, Jae-Mun;Lee, Sang-Jin;Sim, Hae-Seop;Lee, Chang-Hui
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.661-665
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    • 2001
  • The mechanical alloying (MA) effect in $\sigma$-VFe intermetallic compound was studied by neutron and X-ray diffraction. The structure of MA $\sigma$-VFe powders were characterized by the X- ray diffraction with Cu- $K\alpha$ radiation and neutron diffraction with monochromatic neutrons of $1.835\AA$ using a high resolution powder diffractometer (HRPD). Mechanical alloying of $\sigma$-VFe compound gives rise to a dramatic structural change. After 60 hours of MA, the Fe-Fe distribution of the $\sigma$- phase VFe tetragonal structure with 30 atoms in a unit cell is found to change into that of the $\sigma$-(V,Fe) solid solution with bcc structure, which is a stable phase at elevated temperature above $1200^{\circ}C$. A comparison of X-ray diffraction data for the $\alpha$-phase has been also made with the corresponding neutron diffraction data. The (101) and (111) diffraction peaks of the $\sigma$-phase was clearly observed only in neutron diffraction pattern, which is believed to be a characteristic feature due to the chemical atomic ordering of $\sigma$- VFe phase.

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Ferulic Acid Protects INS-1 Pancreatic β Cells Against High Glucose-Induced Apoptosi (INS-1 췌장 베타 세포에서 ferulic acid의 당독성 개선 효과)

  • Jae Eun Park;Ji Sook Han
    • Journal of Life Science
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    • v.34 no.1
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    • pp.9-17
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    • 2024
  • Diabetes mellitus (DM) is one of the main global health problems. Chronic exposure to hyperglycemia can lead to cellular dysfunction that may become irreversible over time, a process that is termed glucose toxicity. Our perspective about glucose toxicity as it pertains to the pancreatic β-cell is that the characteristic decreases in insulin secretion are caused by regulated apoptotic gene expression. In this study, we examined whether ferulic acid protects INS-1 pancreatic cells against high glucose-induced apoptosis. High glucose concentration (30 mM) induced glucotoxicity and death of INS-1 pancreatic β cells. However, treatment with 1, 5, 10, or 20 μM ferulic acid increased the cell viability in a concentration-dependent manner. Treatment with ferulic acid dose-dependently decreased the intracellular levels of reactive oxygen species, thiobarbituric acid reactive substances, and nitric oxide in INS-1 pancreatic β cells pretreated with high glucose. These effects influence the apoptotic pathway, increasing the expression of the anti-apoptotic protein Bcl-2 and reducing the levels of pro-apoptotic proteins, including Bax, cytochrome C, and caspase 9. Annexin V/propidium iodide staining indicated that ferulic acid significantly reduced high glucose-induced apoptosis. These results demonstrate that ferulic acid is a potential therapeutic agent to protect INS-1 pancreatic β cells against high glucose-induced apoptosis.

Sputtering Yield and Secondary Electron Emission Coefficient(${\gamma}$) of the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ Thin Film Grown on the Cu Substrate by Using the Focused Ion Beam (Cu 기판위에 성장한 MgO, $MgAl_2O_4$$MgAl_2O_4/MgO$ 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정)

  • Jung K.W.;Lee H.J.;Jung W.H.;Oh H.J.;Park C.W.;Choi E.H.;Seo Y.H.;Kang S.O.
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.395-403
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    • 2006
  • It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

CHARACTERISTICS OF HETEROEPITAXIALLY GROWN $Y_2$O$_3$ FILMS BY r-ICB FOR VLSI

  • Choi, S.C.;Cho, M.H.;Whangbo, S.W.;Kim, M.S.;Whang, C.N.;Kang, S.B.;Lee, S.I.;Lee, M.Y.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.809-815
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    • 1996
  • $Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

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