• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.348-349
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.53 no.5
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• pp.688-693
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• 2020

Vibrio vulnificus is a Gram-negative marine bacterium known to cause septicemia. This study was conducted to investigate the distribution of V. vulnificus along the coast of Gadeok Island in Korea and to determine the molecular characteristics of isolated strains sampled between March and November 2019 from seawater. The strains were mostly detected between July and September, when the average water temperature and average salinity were 22.2-26.2℃ and 14.2-29.9 psu, respectively. V. vulnificus was not detected in seawater below 15℃. In September, the highest population of V. vulnificus was observed at 2,100 MPN (most probable number)/100 mL, attributable to decreased salinity from heavy rains. In addition, the detection rate of V. vulnificus was higher at the sampling station near the Nakdong River. Virulence-related genes were also identified among the isolates, such as vvhA (97.1%), viuB (44.1%), and vcgC (57.4%). In particular, viuB and vcgC were only observed in V. vulnificus isolated from June to September, when the detection rate was high and water temperature was above 20℃, suggesting the role of seasonal characteristics.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.8 no.1
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• pp.12-16
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• 1983

This paper is dealing a $V_3O_5-P_2O_5$ metal oxide glass semiconductor. This semiconductor is easy to fabricate in the atmospheric condition at relatively low temperature. The element is made like a bead, and platinum segments are used as electrodes. Other kind of metal withstanding high temperature near 1000C can also be used as electrode. Experiment verifies that the fabricated element has the resistance in the order of about ~$10^5\;\Omega$, and shows negative resistance characteristics and switching characteristics with respect to temperature. An equivalent circuit of the element is proposed based on its electrical characteristcs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1106-1110
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• 2003

The electrical characteristics of $A{\sim}C's$ ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $l130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6 mm/min, respectively, were investigated. The varistor voltage of $A{\sim}C's$ ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B $A{\sim}C's$ ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.834-838
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• 2002

In this paper, we have fabricated 4H-SiC schottky diodes utilizing a metal-oxide overlap structure for electric filed termination. The barrier height and Ideality factor were measured by current-voltage, capacitance-voltage characteristics. Schottky barrier height(SBH) were 1.41ev for Ni and 1.35eV for Pt, 1.52eV for Pt/Ti at room temperature and Pt/Ti Schottky diode exhibited Ideality factor was 1.06 to 1.4 in the range of $25^{\circ}C{\sim}200^{\circ}C$. To improve the reverse bias characteristics, an edge termination technique is employed for Pt/Ti/4H-SiC Schottky rectifiers and the device show excellent characteristics with higher blocking voltage up to 780V compared with unterminated devices.

• Journal of Korea Foundry Society
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• v.16 no.2
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• pp.109-115
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• 1996

Effect of various austempered structures on fracture characteristics of C/V graphite cast iron has studied. The tensile strength and hardness reached the maximum value of 971.4MPa and HB302 at the austempering temperature of $250^{\circ}C$, respectively. As the austempering temperature increased, the amount of retained austenite increased from 18% to 22, 29%, while $K_{IC}$ values ranged from the value of $65MPa{\cdot}m^{12} to 70MPa{\cdot}m^{1/2}, 66MPa{\cdot}m^{1/2}. This fact that $K_{IC}$ value was not sensitive to the increase of the amount of the retained austenite was that $K_{IC}$ was dependent on the matrix structure in lower bainitic matrix, while dependent on the notch effect from C/V graphite shape in upper bainitic matrix. Fractured surfaces showed a ductile fracture pattern at $300^{\circ}C$. Very large coalescence by C/V graphite and relatively small voids by spheroidal graphite were observed.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1853-1855
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• 2000

An experimental investigation has been performed in order to understand the $\Phi$-q-n characteristics related to the PD taking place from the various size of artificial defects inserted in epoxy insulation. In this purpose, PD has been detected simultaneously by two different methods such as commercialized PD detector(TE571) and our detection system using self designed CT type sensor. Under the presence of void in epoxy insulation, PD has been initiated at the voltages between 16kV and 20kV which are much lower than the dielectric strength of epoxy insulation (130kV/mm$\sim$l50kV/mm). And also it is revealed that $\Phi$-q-n characteristics have been observed to be dependent upon the size of the artificial defects. Throughout this work, the on site applicability of the self designed Sensor has also been proved by comparing the results with those from the commercialized PD detector. And more one, considerable basic data regarding the insulation, diagnosis could be provided to understand the presence of the voids possibly inserted into the epoxy insulation system of the power apparatus.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.65-69
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• 2003

Microstructural and electromagnetic properties of YIG ferrites, (Y, Ca)-(Fe, V, In, Al)-O for Isolator/Circulator were investigated with the sintering temperature. YIG ferrites of $Y_{2.1}Ca_{0.9}Fe_{4.4}V_{0.5}In_{0.05}Al_{0.05}O_{12}$ were fabricated by sintering at $1300^{\circ}C$, $1330^{\circ}C$, $1350^{\circ}C$, $1370^{\circ}C$. Crystallographic and microstructural properties were measured using XRD and SEM. Saturation magnetization$(4{\pi}M_s)$ were measured using VSM, and FMR(Ferromagnetic Resonance) experiment was conducted to measure ferromagnetic resonance line width$({\Delta}H)$. Microwave characteristics of YIG ferrites were measured using a Network Analyzer. The YIG ferrite of $Y_{2.1}Ca_{0.9}Fe_{4.4}V_{0.5}In_{0.05}Al_{0.05}O_{12}$, sintered at $1350^{\circ}C$, showed higher density, saturation magnetization and lower ferromagnetic resonance line width than those sintered at any other temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.13-18
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• 2000

We have fabricated LB ultra-thin films of maleate system by LB technique and evaluated the deposited status of LB ultra-thin films by I-V characteristics such as capacitance. It was found that the thickness of LB ultra-thin per layer is $27~30[{\AA}]$ by XRD. And, we have known that the conductivity along the horizontal direction of LB ultra-thin films was about $10^{-8}[S/cm]$, it corresponds to the semiconducting materials. Also, the I-V characteristics along the vertical direction of LB ultra-thin films was dominated by Schottky type current, the activation energy obtained by current-temperature characteristics was about 0.84[eV] and the conductivity was about $10^{-14}[S/cm]$, it corresponds to the insulator. And, the anisotropic conduction mechanism of the LB ultra-thin films in vertical direction and horizontal direction is determined by the hydrophilic group and the hydrophobic group in LB ultra-thin films. The above results are applicable to the semiconductor devices such as switching device, which function at the molecular level.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.385-390
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• 2023

In this paper, the 1,700 V level SiC-based power MOSFET device widely used in electric vehicles and new energy industries was designed, that is, a single trench gate power MOSFET structure and a double trench gate power MOSFET structure were proposed to analyze electrical characteristics while changing the design and process parameters. As a result of comparing and analyzing the two structures, it can be seen that the double trench gate structure shows quite excellent characteristics according to the concentration of the drift layer, and the breakdown voltage characteristics according to the depth of the drift layer also show excellent characteristics of 200 V or more. Among them, the trench gate power MOSFET device can be applied not only to the 1,700 V class but also to a voltage range above it, and it is believed that it can replace all Si devices currently applied to electric vehicles and new energy industries.