• 한국수산과학회지
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• 제27권3호
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• pp.292-298
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• 1994

식중독 원인균으로 알려진 Vibrio mimicus(V. mimicus)의 분포 상태와 이의 생리적 특성을 조사하기 위하여 1993년 1월부터 9월까지 민락동과 광안리 해수욕장 부근의 해수를 채취하여 V. mimicus의 월별 분포 상태를 실험하였으며, 여기서 분리된 균주 중에서 항생제 내성이 강한 균으로 분리, 동정된 V. mimicus K-1의 생리적 성질과 배양 특성을 조사하였다. 수온이 $16.3^{\circ}C$인 4월부터 검출되기 시작하여 8월까지 검출되었으나, 수온이 $15^{\circ}C$ 이하인 겨울철(1, 2, 3월)에는 전혀 검출이 되지 않았다. 분포 정도는 최소 0.4(MPN/100ml)에서 최고 70((MPN/100ml)으로 지역에 따라 차이가 있었다. V. mimicus K-1은 $37^{\circ}C$, pH 7.5, 그리고 염도 $0.5\%$에서 각각 최대의 증식율을 보였다. 그리고 항생제 (colistin, erythromycin, bacitracin, tetracycline, penicillin)에 대해서 내성을 나타내었다. 자외선(30W, 50m)에 대해서는 상당히 내성이 약했으며, 70초간 조사 후에는 검출이 되지 않았다. 열에 의한 치사율은 $50^{\circ}C$에서 5.7분, $60^{\circ}C$에서 2.1분, 그리고 $70^{\circ}C$에서는 0.7분 만에 최초균수의 $90\%$이상이 사멸하였다.

• 융합정보논문지
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• 제7권6호
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• pp.97-102
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• 2017

본 논문에서는 연구목적과 관련하여, 협업 지능형교통체계와 자율주행체계에 관심을 가지고 있으며, C-ITS 특성 가운데 핵심 전달 메시지인 CAM과 DENM 특성 분석, 또한 V2X 통신의 보안 특성과 함께 CAM 및 DENM 메시지의 보안 인증서 및 헤더 구조를 중심으로 분석에 초점을 맞추고 있다. 연구방법에 대해, 우리는 CAM 메시지인 차량의 위치와 상태를 알리는 메시지를 분석하고, DENM 메시지인 차량 사고와 같은 이벤트를 알리는 메시지를 분석하고, 이를 지원하는 보안통신 특성을 분석한다. 차량통신에 사용하는 보안헤더와 인증서 형식과 함께, 차량용 서명된 인증서 검증 절차, 그리고 차량용PKI 특성을 얻었다. 아울러, V2X 보안통신을 위해 필요로 하는 보안 동기패턴에 대한 특성과 전송능력에 대해서도 함께 유도할 수 있었다. 그러므로 본 논문은 C-ITS 환경에서 DENM 및 CAM을 전송하는 통신 서비스를 위한 보안 특성을 고려할 때 의미 있는 결과라 할 수 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.33-36
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• 2002

MESFET was fabricated using 4H-SiC substrates and epitaxy The DC characteristics of 0.5 urn gate length, 400 urn gate width MESFET had $I_{dss}$=200 ㎃/mm, maximum transconductance of 12 ㎳/mm at Vrs=-4 V, V, Is=27 V. Thc device had an fT of 2.5 GHz and $f_{mdx}$ of 13.3 GHz at $V_{ds}$ =27 V and $V_{g}$=-4 V. The fabrication and characterization of this device are discussed.d.d.d.

• 한국정밀공학회지
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• 제14권11호
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• pp.69-76
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• 1997

The rotating bending fatigue tests were performed using the specimens taken from Cr-Mo-V steel, widely sued in thermal power plant turbines, at various temperatures such as room temperature, 300 .deg. C, 425 .deg. C and 550 .deg. C. The characteristics of fatigue crack propagation were examined and analyzed by using fracture mechanics parameter. The plastic replica method was also applied in order to measure the crack length on the basis of serial observation of fatigue crack propagation behavior on the defected specimen surface. The fatigue crack propagation behavior of Cr-Mo-V steel was investigated within the frame work of elastic-plastic fracture mechanics. The propagation law of fatigue crack is obtained uniquely by using the term .sigma. $^{n}$ sub a/where .sigma. $_{a}$ is the service stress, a is the crack length and n is a constant. The values of constant n are nearly equal to 2.48, 2.60 and 8.61 at room temperature, 300 .deg. C and 425 .deg. C.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.4-7
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• 2002

Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• 한국진공학회지
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• 제9권4호
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• pp.360-366
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• 2000

LSMCD (Liquid Source Misted Chemical Deposition)공정으로 Sr/Ta몰비 0.35~0.65 조성범위에서 150 nm 두께의 $Sr_xBi_{2.4}Ta_2O_9$ (SBT)박막을 제조하여, Sr/Ta몰비에 따른 결정상과 미세구조, 강유전 특성 및 누설전류 특성을 분석하였다. LSMCD 공정으로 제조한 SBT박막은 Sr/Ta 몰비 0.425의 조성에서 최적의 강유전 특성을 나타내어 $\pm$5 V의 구동전압 인가시 15.01 $\mu$C/$\textrm{cm}^2$의 잔류분극 $2P_{r}$과 41kV/cm의 항전계 $E_{c}$를 나타내었다. LSMCD공정으로 제조한 Sr/Ta 몰비 0.35~0.5 범위의 SBT 박막은 100 kV/cm의 전기장 하에서 $10^{-5}$A/$\textrm{cm}^2$ 미만의 낮은 누설전류 밀도를 나타내었으며, $\pm$5V의 구동전압 인가시 $10^{10}$회의 스위칭 후에도 잔류분극 감소가 1% 미만인 우수한 분극피로 특성을 나타내었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1008-1012
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• 1996

I-V, C-V characteristics of inverted staggered type hydrogenerated amorphous silicon thin film transistor(a-Si:H TFT) was studied and experimentally verified. The results show that the log-log plot of drain current increased by voltage increase. The saturated drain current of DC output characteristics increased at a fixed gate voltage. According to the increase of gate voltage, activation energy of electron and the increasing width of Id at high voltage were decreased. Id saturation current saturated at high Vd over 4.5V, Vg-ld hysteresis characteristic curves occurred between -15V and 15V of Vg. Hysteresis current decreased at low voltage of -15V and increased at high voltage of 15V.

• Bulletin of the Korean Chemical Society
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• 제30권12호
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• pp.2895-2898
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• 2009

The complete structural characterization of dehydrodivanillin, an important natural product of interest to the food, cosmetics and aroma industries, has been carried out using multi-dimensional NMR spectroscopic techniques, and its previously $reported^{13}$C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra of the films indicate a wide optical band gap of more than 3 eV. Typical J-V characteristics of Glass/ITO/dehydrodivanillin/Al structure exhibited moderate current densities ${\sim}10^{-4}\;A/cm^2$ at voltages > 25 V with an appreciable SCLC mobility of the order of $10^{-6}\;cm^2$/V-s.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1100-1106
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• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.