• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.197-205
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• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• KEPCO Journal on Electric Power and Energy
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• v.6 no.4
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• pp.405-411
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• 2020

In this paper, we designed the COS MEMS system for sensing the falling detection and explosive noise of fuse link in COS (Cut Out Switch) installing on the power distribution. This system analyzed the failure characteristics and an instantaneous breakdown of power distribution. Therefore, our system strengths the industrial competence and guaranties the stable power supply. In this paper, we applied BLE (Bluetooth Low Energy) technology which is suitable protocol for low data rate, low power consumption and low-cost sensor applications. We experimented with LSM6DSOX which is system-in-module featuring 3 axis digital accelerometer and gyroscope boosting in high-performance mode and enabling always-on low-power features for an optimal motion for the COS fuse holder. Also, we used the MP34DT05-A for gathering an ultra-compact, low power, omnidirectional, digital MEMS microphone built with a capacitive sensing element and an IC interface. The proposed COS MEMS system is developed based on nRF52 SoC (System on Chip), and contained a 3-axis digital accelerometer, a digital microphone, and a SD card. In this paper of experiment steps, we analyzed the performance of COS MEMS system with gathering the accelerometer raw data and the PDM (Pulse Data Modulation) data of MEMS microphone for broadcasting the failure of COS status.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1211-1214
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• 2003

The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.129-133
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• 2001

In this paper, hermetic sealing was studied fur wafer level packaging of the MEMS devices. With the flip-chip bonding method, this B-stage epoxy sealing will be profit to MEMS device sealing and further more RF-MEMS device sealing. B-stage epoxy can be cured 2-step and hermetic sealing can be obtained. After defining $500{\mu}{\textrm}{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was then aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line were maintained during the sealing process. The height of the seal-line was controlled within $\pm0.6${\mu}{\textrm}{m}$ and the strength was measured to about 20MPa by pull test. The leak rate of the epoxy was about $10^7$ cc/sec from the leak test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.148-152
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• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work, polysilazane liquide as a precursor was deposited on Si wafers by spin coating, microstructured and solidificated by UV lithography, and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules, hardness and tensile strength of the SiC microstructure implemented under optimum process condtions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated mulitlayer or 3D microstructures as well as its good mechanical properties.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.11
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• pp.544-547
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• 2006

In this paper, we present a temperature-controlled system for MEMS electrical resistance heaters without a temperature sensor. To rapidly control the heater temperature, the microheater system developed consists of a power supply, power amplifier, digital ${\underline{P}}roportional-{\underline{I}}ntegral-{\underline{D}}ifferential$ (PID) controller, and a quarter bridge circuit with the microheater and three resistors are nominally balanced. The microheaters are calibrated inside a convection oven to obtain the temperature coefficient with a linear or quadratic fit. A voltage amplifier applies the supply voltage proportional to the control signal from the PID controller. Small changes in heater resistance generate a finite voltage across the quarter bridge circuit, which is fed back to the PID controller to compare with the set-point and to generate the control signal. Two MEMS microheaters are used for evaluating the developed control system - a NiCr serpentine microheater for a preconcentrator and a Nickel microheater for ${\underline{P}}olymerase\;{\underline{C}}hain\;{\underline{R}}eaction$ (PCR) chip.

• Journal of Korean Association for Spatial Structures
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• v.18 no.3
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• pp.67-74
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• 2018

Recently, measuring instruments for SHM of structures has been developed. In general, the wireless transmission of sensor signals, compared to its wired counterpart, is preferable due to the absence of triboelectric noise and elimination of the requirement of a cumbersome cable. However, in extreme environments, the sensor may be less sensitive to temperature changes and to the distance between the sensor and data logger. This may compromise on the performance of the sensor and instrumentation. Therefore, in this paper, free vibration experiments were conducted using wireless MEMS sensors at an actual site. Measurement was assessed in time and frequency domain by changing the temperature variation at($-8^{\circ}C$, $-12^{\circ}C$ and $-16^{\circ}C$) and the communication distance (20m, 40m, 60m, 80m).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.392-393
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• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work. polysilazane liquide as a precursor was deposited on Si wafers by spin coating. microstructured and solidificated by UV lithography. and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules. hardness and tensile strength of the SiC microstructure implemented under optimum process conditions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated multlayer or 3D microstructures as well as its good mechanical properties.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.265-272
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• 2003

This paper describes anodic bonding characteristics of MLCA (Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100%, input power $1\;W/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA and Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-0.08 %FS. Moreover, any damages or separation of MLCA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MLCA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.