• Title/Summary/Keyword: C-AFM

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AFM을 이용한 나노급 $Ge_2Sb_2Te_5$의 전기적 특성

  • Bae, Byeong-Ju;Hong, Seong-Hun;Jo, Jung-Yeon;O, Sang-Cheol;Hwang, Jae-Yeon;Lee, Heon
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.21.1-21.1
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    • 2009
  • 상변화 메모리는 비휘발성 메모리이면서 빠른 동작 속도, 낮은 동작 전압 등 다양한 장점을 지니고 있어 차세대 메모리로 주목 받고 있다. 최근 상변화 메모리의 동작 전류를 감소시키기 위해 상변화 물질 및 전극 물질에 대한 연구를 진행하고 있으며, 소자의 크기를 최소화 하기 위한 연구가 진행되고 있다. 본 연구에서는 나노 임프린트 리소그래피와 전도성 AFM을 이용하여 나노급 상변화 물질의 특성을 평가하였다. 나노급 상변화 물질을 형성하기 위해 열경화성 나노 임프린트 리소그래피를 이용하여 $Ge_2Sb_2Te_5$(GST)/Mo/SiO2 기판 위에 200nm급 홀 패턴을 형성하였다. 홀 패턴에 Cr을 증착하여 리프트 오프 한 뒤 Cr을 하드 마스크로 사용하여 GST를 식각하였다. 그 결과, Mo 하부 전극 위에200nm 지름과 100nm 높이를 가지는 GST 나노 기둥을 형성하였다. GST 나노 기둥의 전기적 특성 평가를 위해 저항 측정 장비 및 펄스 발생기와AFM을 사용하였다. AFM은 접촉 모드로 설정하였으며, Pt가 코팅된 AFM tip을 사용하여 Cr 하드 마스크와 함께 상부 전극으로 사용하였다. GST 나노 기둥을 초기화 시키기 위해 I-V sweep을 하였으며, 그 결과 $1M\Omega$에서 $10\;k\Omega$으로 저항이 변화함을 확인하였다. GST 나노 기둥은 2V, 5ns의 리셋 펄스에서 비정질로 변화하였으며, 1.3V, 150ns의 셋 펄스에서 결정질로 변화하였다. 이 동작 전압으로 5번의 스위칭 특성을 평가하였으며, 이 결과는 소자 형태의 200nm 급GST의 특성과 유사하여 나노급 상변화 물질을 테스트하는 새로운 방법으로 사용될 수 있을 것이다.

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The Etching Properties of SBT Thin Films in Cl$_2$ Inductively Coupled Plasma (Cl$_2$ 유도결합 플라즈마를 이용한 SBT 박막의 식각특성)

  • Kim, Dong-Pyo;Kim, Chang-Il
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.5
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    • pp.211-215
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    • 2001
  • SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.

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Premature Stiffening of Cement Paste Associated with AFm Formation

  • Chung, Chul-Woo;Lee, Jae-Yong
    • Journal of the Korea Institute of Building Construction
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    • v.11 no.1
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    • pp.83-90
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    • 2011
  • The purpose of this research is to investigate the effect of AFm formation on the stiffening process of cement paste. High and low alkali sulfate clinkers were used for the experiments. The flow and stiffening behavior of cement paste was investigated using modified ASTM C403 penetration resistance test and oscillatory shear rheology. X-ray powder diffraction (XRD) was used for phase identification associated with stiffening of the paste. It was found from the results that low alkali clinker mixture produced very strong premature stiffening whereas high alkali clinker mixture did not cause premature stiffening. This is because of the large amount of alkali sulfate present in the clinker. Addition of calcium and sodium chloride to the high alkali clinker mixture caused faster stiffening and set.

Nanoparticle Size of $TiO_2$ Thin-Films Fabricated by Novel Method(IV) (새로운 방식에 외해 제작된 $TiO_2$ 박막의 나노입자크기(IV))

  • Moon, Jeong-Oh;Jeong, Jae-Hoon;Kim, Kang-Eun;Moon, Byung-Kee;Son, Se-Mo;Chung, Su-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.760-763
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    • 2002
  • Nanoparticle size of Titanium dioxide thin films was prepared by novel method. Particle size and surface structure of $TiO_2$ thin films were investigated by atomic force microscopy(AFM), scanning electron microscopy(SEM). All thin films process were prepared at room temperature. Particle size was reduced from 100 to 30nm with increasing amount of $Ti[OCH(CH_3)_2]_4$ observed by AFM images. All thin films were irradiated for 5 minutes by white light. Increasing the annealing temperature, particles size was increased. In the $TiO_2$(40%) thin films was annealed at $300^{\circ}C$ for 30minutes, the particle size was about 10nm.

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A Studies on the Surface Morphology and Fine Structure of PET Film Treated by DMF (DMF로 처리된 PET Film의 표면모폴로지와 미세구조에 대한 연구)

  • 서은덕
    • Textile Coloration and Finishing
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    • v.16 no.1
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    • pp.59-64
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    • 2004
  • As a simulation of solvent-assisted dyeing, the solvent effects on the structure of polyethylene terephthalate(PET) film treated by dimethylformamide(DMF) were investigated. The effects were evaluated by the atomic force microscopy(AFM) topographical changes and FT-IR spectrum analysis. PET films treated with DMF at $70^{\circ}C$ for several different treatment time(20, 40, and 60 min). AFM topography showed that, with increasing treatment time by DMF, PET surfaces became smooth due to the swelling phenomenon and the rigid structure changed into flexible state which was contributed to increase the surface area of PET films. FT-IR spectrum analysis showed that DMF and molecular chains of PET interacted each other via their polar carbonyl groups and that DMF also affected the out-of-plane bending vibration mode of phenyl ring of PET.

Fabrication and Characterization of $High-T_c$ Superconducting Single Channel Flux Flow Transistor using the Atomic Force Microscope TiO Cantilever Tip (원자힘 주사현미경 TiO 탐침을 이용한 고온 초전도 단일채널 자속 흐름 트랜지스터의 제작 및 특성 해석)

  • Ko, Seok-Cheol;Kang, Hyeong-Gon;Lim, Sung-Hun;Lee, Jong-Hwa;Lee, Hae-Sung;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.101-104
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    • 2004
  • We have fabricated a channel of superconducting flux flow transistor(SFFT) using the voltage-biased atomic force microscope(AFM) TiO tip and performed numerical simulations for the SFFT controlled by the magnetic field with a control current. The critical current density in a channel of the fabricated SFFT was decreased with the applied current by a control line. By comparing the measured with theoretical results, we showed a possibility of fabrication of an SFFT with a nano-channel using AFM anodization process technique.

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Orientation Control of Polyoxometalate Nanoparticles in Organic- Inorganic Hybrid LB Films

  • Lee, Burm-Jong;Kim, Hee-Sang;Park, Dong-Ho;Nam, Sang-Hee;Yunghee Oh
    • KIEE International Transactions on Electrophysics and Applications
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    • v.4C no.1
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    • pp.26-30
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    • 2004
  • Orientation control of a polyoxometalate (POM) nanoparticle in its two-dimensional arrangement was attempted by Langmuir-Blodgett (LB) technique. For their uniorientation, two carboxyl groups were introduced on one side of the POM particle, and hydrophobic long chains were attached by esterification with the carboxyl groups (C18-POM). The C18-POM layer spread on water surface showed stability against surface pressure up to 60 mN/m. The pattern of the C18-POM isotherm was quite different from stearyl alcohol (C18-OH), while the POM itself did not show any development of surface pressure on water surface. The AFM images of C18-POM LB films showed some microcrystalline structures that were noticed as dot structures by Brewster angle microscopy. The microimages for C18-POM did not completely spread out as a monolayer on the water surface. The XPS spectra indicated the presence of POM structures and stearyl ester bonds formed from about 65% of the total carboxyls. The XRD spectra showed that the unioriented POMs were not positioned with the same lattice distance but rather in a wavy surface state.

6H-SiC single crystal growth by the sublimation method : (II) the analysis of internal defects (승화법에 의한 6H-SiC 단결정 성장 : (II) 내부 결함 해석)

  • Kim, Hwa-Mok;Kang, Seung-Min;Joo, Kyoung;Shim, Kwang-Bo;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.2
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    • pp.191-196
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    • 1997
  • The micro-defects in the SiC single crystals were characterized using a variety of the microscopic techniques (OM, TEM, AFM). It was observed that the hexagonal-plate precipitates and the longitudinal micropipes are present inside of SiC wafers. TEM results exhibited that there are amorphous phase in the SiC wafer and the phase were originated from the formation of the nonstoichiometric $Si_{1-x}_xC_x$ phases during growth process.

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Improved Magnetic Anisotropy of YMn1-$xCrxO_3 $ Compounds

  • Yoo, Y.J.;Park, J.S.;Kang, J.H.;Kim, J.;Lee, B.W.;Kim, K.W.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.218-218
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    • 2012
  • Recently, hexagonal manganites have attracted much attention because of the coexistence of ferroelectricity and antiferromagnetic (AFM) order. The crystal structure of hexagonal manganites consists of $MnO_5$ polyhedra in which $Mn^{3+}$ ion is surrounded by three oxygen atoms in plane and two apical oxygen ions. The Mn ions within Mn-O plane form a triangular lattice and couple the spins through the AFM superexchange interaction. Due to incomplete AFM coupling between neighboring Mn ions in the triangular lattice, the system forms a geometrically-frustrated magnetic state. Among hexagonal manganites, $YMnO_3$, in particular, is the best known experimentally since the f states are empty. In addition, for applications, $YMnO_3$ thin films have been known as promising candidates for non-volatile ferroelectric random access memories. However, $YMnO_3$ has low magnetic order temperature (~70 K) and A-type AFM structure, which hinders its applications. We have synthesized $YMn1_{-x}Cr_xO_3$ (x = 0, 0.05 and 0.1) samples by the conventional solid-state reaction. The powders of stoichiometric proportions were mixed, and calcined at $900^{\circ}C$ for $YMn1_{-x}Cr_xO_3$ for 24 h. The obtained powders were ground, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, and heated up to $1,300^{\circ}C$ and sintered in air for 24 h. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu $K{\alpha}$ radiation. All the magnetization measurements were carried out with a superconducting quantum-interference-device magnetometer. Our experiments point out that the Cr-doped samples show the characteristics of a spin-glass state at low temperatures.

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AFM Studies on the Surface Morphology of Sb-doped $SnO_2$ Thin Films Deposited by PECVD (AFM을 이용한 PECVD에 의해 증착된 Sb-doped $SnO_2$ 박막의 표면형상에 관한 연구)

  • Yun, Seok-Yeong;Kim, Geun-Su;Lee, Won-Jae;Kim, Gwang-Ho
    • Korean Journal of Materials Research
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    • v.10 no.8
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    • pp.525-531
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    • 2000
  • Sb-doped tin oxide films were deposited on Cornig glass 1737 substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The films deposited at different reaction parameters were then examined by using XRD and AFM. The relatively good crystalline thin film was formed at $450^{\circ}C$, input gas ratio R[$P_{SbCl}P_{{SnCl}_4}$]=1.12 and r.f. power 30W. The surface roughness of the film formed by PECVD compared to TCVD was more smooth. Higher concentration of Sb dopant, lower deposition temperature, and thinner thickness of deposited film led to de-creasing surface roughness of the formed thin films.

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