• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.92-96
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• 2002

A silver indium sulfide $(AgInS_{2})$ epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-ta-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$, and the spin orbit splitting, $\Delta_{so.}$ have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}(T)$, was determined.

• Journal of the Mineralogical Society of Korea
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• v.12 no.1
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• pp.23-31
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• 1999

The dehydroxylation of kaolinite was investigated in detail by means of energy-filtering transmission electron microscope with both orientations parallel and perpendicular to c. The dehydroxylation could be characterized by the broad background including (0.211) band (20~24$^{\circ}$ 2$\theta$) on X-ray diffraction and by the three halo rings (d-spacing : 3.28~4.40$\AA$ (near (02,11) band), 2.41~245$\AA$ (near (20,13) band), 1.16~1.23$\AA$ (near (0.8,44) band)), and (02,11) and (20,13) spots on electron diffraction. These indicate existence of a short-range order along the a and b axes. Interplanar spacing of (001) is reduced to about 6.86$\AA$ and the sharp additional intensity maximum of about 14.2$\AA$ reveals that metakaolinite has a modulated structure along c axis. It is proposed that the modulated structure is attributed to the domains consisting of more than two-layers due to the changes of positions of the vacant octahedral sites in successive layers.

• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2004.04a
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• pp.23-27
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• 2004

Developing of electromagnetic wave absorbers for GHz frequency, we used cast Alnico magnets. It is the first research paper to show that electromagnetic wave absorbers with Alnico magnets have good reflectivity in the GHz frequencies. Especially in this study, we used recycled cast Alnico magnets for natural resources problems and natural environment problems. New electromagnetic wave absorbers developed in this study are useful for X-band and C-band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.121-122
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• 2006

Single crystal of $CdIn_2Te_4$ were grown by the Bridgman method without using seed crystals. From photocurrent measurements, its was found that three peaks, A, B, and C, correspond to the instrinsic transition from the valence band states of ${\Gamma}_7$(A), ${\Gamma}_6$(B), and ${\Gamma}_7$(C) to the conducton band states of ${\Gamma}_6$, respectively. Crystal field splitting and spin orbit splitting were found to be at 0.2360 eV and 0.1119 eV, respectively, from found to be photocurrent spectroscopy.

• Publications of The Korean Astronomical Society
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• v.5 no.1
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• pp.65-84
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• 1990

The temperature effects of the KNU UBV photometric system are investigated, using the HAMAMATSU 1P21 data. The variation of the passband width of V-band with temperature is about $5{\AA}/^{\circ}C$ while those of B-band and U-band are negligible. This large effect of V-band causes a significant variation of V-mag. and (B-V)-color with temperature such as ${\sim}0.02mag/^{\circ}C$ in both cases. This result strongly suggests that in the photometric observations of binary stars, the temperature effects of the response of photomultiplier and the passband of filters must be considered to avoid the systematic variation in magnitude and color particularly at the minimum of light curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.387-388
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• 2008

This paper presents the design approach and test results of the Q-band precision subminiature coaxial adaptor based on transmission line theory using multi-step impedance and air-holes to increase its cutoff frequency. In order to increase the frequency performance, the adaptor is designed with hooked structure, fixing step, multi-air-holes, and outer conductor. The return loss increments due to the hooked structure and multi air-holes are minimized to 2 dB and 1.5 dB, respectively. A VSWR(Voltage Standing Wave Ratio) of <1.2 is obtained from DC to 40 GHz, while guaranteeing the durability of the adaptor from room-temperature$(25^{\circ}C)$ to $120^{\circ}C$.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.969-977
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• 1996

본고에서는 여러가지 Wide Band-gap중에서 특히 최근에 많은 관심을 끌고 있는 GaN와 4H-SiC, 6H0SiC의 전자기적 물성을 소개하고 현재 이들로부터 제작된 prototype소자들의 성능을 비교함으로써 그 발전현황을 알아보기로 한다. 본고에서 관심을 두는 소자분야는 광전소자(optoelectronic devices)라기보다는 고주파 고출력용 전력소자임을 밝힌다. 아울러 GaN로부터 제작된 MESFET(MEtal Semiconductor Field-Effect Transistor)소자의 고주파 대역에서의 Large-Signal특성을 Device/Circuit Model을 통하여 실험치와 비교하여보고 이로부터 최적화된 channel 구조를 갖는 소자구조에서의 RF특성을 조사한다.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.20-21
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• 2003

Erbium doped fiber (EDF) sources are useful devices for characterization of optical components for wavelength division multiplexing (WDM) fiber optic communication system. Therefore, there are many efforts to extend the bandwidth and to increase the power of the light source. Especially, L-band ASE source uses the low inversion state of EDF. It makes the power efficiency very low and needs a lot of fiber as several times as the fiber needed in C-band ASE generation. (omitted)

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.6
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• pp.268-271
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• 2004

An analytic design formula is proposed for a TEM mode dielectric bandpass filter with attenuation poles at desired frequencies in the stop band. In order to sustain the constant ripple in the passband due to attenuation poles, the initial resonant frequencies of the various resonators adopted in a filter with attenuation poles are newly calculated. The proposed design theory is verified by designing various bandpass filters with attenuation poles in the stop band.