• Korean Journal of Food Science and Technology
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• v.18 no.4
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• pp.270-277
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• 1986

Ficin, a proteolytic enzyme in Fig latex, was extracted and purified with using ammonium sulfate and CM-cellulose column chromatography, respectively, and studied for its chemical properties. The disc gel electrophoresis showed one major and three minor bands for $(NH_4)_2SO_4$ extract and only one band showed after CM-cellulose chromatography. The optimum conditions for ficin activity was found to be pH 7.0 and $50^{\circ}C$. The amino acids composition of the purified ficin were 21.8% as acidic, 3.5% as basic and 74.7% as neutral amino acids. The amino acids analysis indicated that the ficin was composed of 174 amino acids residue having molecular weight of 19,500.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

• Korean Journal of Plant Resources
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• v.17 no.2
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• pp.116-121
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• 2004

Panax ginseng discarded and lower than 4th grade is caused by red skin disease showing red color skin in ginseng. This kind of red skin ginseng is found a lot in Panax ginseng rather than Panax quinquefolium, and it is considered that red skin disease might be caused by gene. Therefore, this study was carried out to detect genes resistant to red skin disease using RT-PCR. RNA was extracted from three years old ginseng root of both red skin and normal portion in the same root. After RNA extraction, PCR amplification was performed from cDNA using many random primers. As a result, specific band for red skin was found. It is considered that the gene forming band has possibility to be related with red skin disease, and this gene should be decided if it's related with red skin disease. If that gene is related with red skin disease, it will be used for transformation to foster for resistance to red skin disease as well as for selection marker. Bowever, if it's not related with red skin disease, more primers should be used to find gene related with red skin disease.

• The korean journal of orthodontics
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• v.21 no.3
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• pp.563-580
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• 1991

The purpose of this study was to investigate and compare the biomechanical properties of orthodontic rubber elastic materials. Latex bands, nylon-covered elastic threads and polyurethane-based elastic modules, delivering $205{\pm}10$ grams force at 30mm stretching state were selected and stored separately in 3 environments-air ($22{\pm}3^{\circ}C$), distilled water ($37{\pm}1^{\circ}C$), or natural saliva ($37{\pm}1^{\circ}C$). And, the amount of remaining force and permanent elongation of each sample were measured on Instron at interval of 1 hour, 6 hours, 12 hours, 24 hours, 1 week, and 2 weeks. So the data derived were analyzed statistically. The results were as follows: 1. Force decay and permanent elongation of all materials increased with time lapsed; elastic module, latex band and nylon-covered elastic thread in that order of the amount of force decay; elastic module, elastic thread, latex band in that order of the amount of permanent elongation. 2. Among environmental conditions, force decay and permanent elongation in natural saliva, most increased, and those in air, least increased. 3. There was a negative correlation between force decay and permanent elongation. 4. Force decay and permanent elongation were most affected by the material itself, time and environments in that order. 5. After 24 hours in saliva, the percentage of remaining force in elastic module was 51.9% (107.37grams); in latex band, 83.2%(172.62grams); in elastic thread, 85.0%(179.25grams). After 2 weeks in saliva, the percentage of remaining force in elastic module was 42.9%(88.75grams); in latex band, 74.5%(154.50grams); in elastic thread, 77.6%(163.75grams).

• Journal of Pharmacopuncture
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• v.3 no.2
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• pp.153-168
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• 2000

This study was designed to study on major components of various Bee Venom(Bee Venom by electrical stimulation in Korea; K-BV I, Bee Venom by Microwave stimulation in Korea; K -BV II, 0.5rng/ml, Fu Yu Pharmaceutical Factory, China; C-BV, 1mg /ml, Monmouth Pain Institute, Inc., U.S.A.; A-BV) using Electrophoresis. The results were summarized as follows: 1. In 1:4000 Bee Venom solution rate, the band was not displayed distinctly usmg Electrophoresis. But in 1: 1000, the band showed clearly. 2. The results of Electrophoresis at solution rate 1:1000, K-BV I and K-BVII showed similar band. 3. The molecular weight of Phospholipase $A_2$ was known as 19,000 but its band was seen at 17,000 in Electrophoresis. 4. Protein concentration of Bee Venom by Lowry method was different at solution rate 1:4000 ; C-BV was $250{wmu}g/ml,\;K-BV\;I\;was\;190{wmu}g/ml,\;K-BVII\;was\;160{wmu}/ml\;and\;C-BV\;was\;45{wmu}/ml5$. Electrophoresis method was unuseful for analysis of Bee Venom when solution rate is above 1:4000 but Protein concentration of Bee Venom by Lowry method was possible. These data from the study can be applied to establish the standard measurement of Bee Venom and prevent pure bee venom from mixing of another components. I think it is desirable to study more about safety of Bee Venom as time goes by.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of Plant Biology
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• v.22 no.4
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• pp.101-106
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• 1979

Giemsa C-banding analysis with Korean rye strain revealed that individual chromosomes had characteristic banding patterns making it possible to distinguish the seven rye chromosomes one from another. It seems to be evident that B-chromosomes in rye contain proportionally more heterochromatin than autosomes.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.182-186
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• 2004

In this paper, 2.4GHz WLAN BPF(Band Pass Filter) which has two DGS(Defected Ground Structure) unit cells was simulated and manufactured. To do this, a unit DGS resonator with resonant frequency is designed. Then the BPF for WLAN with the center frequency of 2.4GHz md the bandwidth of 200MHz is designed using two DGS resonator, finally this circuit is fabricated. We also proposed the equivalent circuit of the BPF employing two DGS resonator. The BPF with DGS was obtained experimental results with network analyzer Agilent 8510C. The measured result shows good agreement with simulated data. Experimental results show the center frequency of 2.45GHz, the insertion loss of 1.08dB, and the 3-dB bandwidth of 470MHz(19.5%). Acceding to the measured values, it is found that the fabricated DGS BPF is available for wireless LAN.