• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.100-105
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• 2006

In this paper, a low noise amplifier(LNA) in a receiver of a low noise block down converter (LNB) for direct broadcasting service(DBS) is implemented using GaAs HEMT. The LNA is designed for the bandwidth of 11.7 GHz-12.2 GHz. The two-stage LNA consists of a input matching circuit, a output matching circuit, DC-blocks and RF-chokes. Experimental results of the LNA show the noise figure less than 1.4 dB, the gain greater than 23 dB and the flatness of 1 dB in the bandwidth of 11.7 to 12.2 GHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.10
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• pp.564-569
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• 2000

This paper analyzed single AlGaAs/GaAa heterojunction energy band structures by solving Schr dinger's equation and Poisson's equation self-consistently. Four different concentrations, positively ionized donors, holes in the valence band, free electrons in the conduction band and 2DEG are taken into account for the whole system. 2DEG from both of the structures are obtained and compared with the date available in the literatures. Differential capacitances are also calculated from the concentration profiles obtained to prove the validity of the single AlGaAs/GaAs system. Finally, theoretical predictions for both of 2DEGs and the capacitances show good agreement with the experimental data referred in this study. It has only an error of les than 10 percent.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.4
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• pp.707-713
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• 2007

This paper implements a RFID multi-band multi-protocol reader platform, possible to select one of the UHF bands used in particular for distribution system in RFID, that is, from 860MHz to 960MHz, through programmable configuration. It also enables implemented platform in this paper to recognize many kinds of TAG protocol, such as EPC Class 1 GEN 1, Class 1 Gen2, ISO 18000-6A, B and C.

• Bulletin of the Korean Chemical Society
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• v.8 no.2
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• pp.115-118
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• 1987

The angular dependence of polarization of the A-band emission from RbCl:$Pb^{2+}$ is measured at 13.4 K to determine the symmetry axes of the $Pb^{2+}-v^-_c$ dipoles. The results indicate that these centers posess tetragonal symmetry. This implies that $v^-_c$ is situated in the next-nearest-neighbor (nnn) position to the $Pb^{2+}$ ion. The polarization ratio of the A-band emission measured at various temperatures is found to be independent of the temperature. The temperature independence of polarization confirms that, for the ion, the Jahn-Teller effect reduced by strong spin-orbit interaction does not give rise to thermal depolarization.

• Journal of Advanced Navigation Technology
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• v.21 no.2
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• pp.193-199
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• 2017

In the paper, a dual band-notched monopole antenna is proposed for 2.4 GHz WLAN (2.4 ~ 2.484 GHz) and UWB (3.1 ~ 10.6 GHz) applications. The 3.5 GHz WiMAX band notched characteristic is achived by a pair of L-shaped slots instead of the previous U-shaped slot on the center of the radiating patch, whereas the 7.5 GHz band notched characteristic is achived by C-shaped strip resonator placed near to the microstrip feed line. The measured impedance bandwidth (${\mid}S_{11}{\mid}{\leq}-10dB$) is 8.62 GHz (2.38 ~ 11 GHz) which is sufficient to cover 2.4 GHz WLAN and UWB band, while measured band-notched bandwidths for 3.5 GHz WiMAX and 7.5 GHz bnad are 1.13 GHz (3.15 ~ 4.28 GHz) and 800 MHz (7.2 ~ 8 GHz) respectively. In particular, it has been observed that antenna has a good omnidirectional radiation patterns and higher gain of 2.51 ~ 6.81 dBi over the entire frequency band of interest.

• Parasites, Hosts and Diseases
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• v.30 no.3
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• pp.209-218
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• 1992

When cystic fluid of Taenia solium metacestodes (CF) was filtrated through Sephacryl S-300 Superfine, major proteins were in fractions III add IV Major protein in fraction III was Band C protein of 150 kDa and that in fraction IV was Band N protein (Choi et of., 1990). When CF was electrophoresed in 0.9% agarose gel and reacted with anti-CF rabbit serum (RACF), two main bands, a long outer and a short inner band, were precipitated, together with 8 minor bands. RACF reacted with fraction III forming the long outer band whereas RACF formed the short infer band with fraction IV in immunoelectrophoresis (IEP) The long outer precipitin band of CF fraction III was similar to antigen B in hydatid fluid (HF) of Oriol et at. (1971), while the short inner band of CF fraction IV was similar to HF antigen 5 of Caption et at. (1967) . When HF was reacted with RACF, the short inner band was immunoprecipitated without forming the long outer band. Common antigenicity between CF and HF seemed to exist in fraction IV rather than in fraction III of CF. Patient sera of neurocysticercosis reacted more frequently with fraction III than with fraction IV.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.194-200
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• 2001

In this study, the optical properties of diamond-like carbon(DLC) films, which was synthesized by 13.56 MHz rf plasma enhanced chemical vapor deposition system(PECVD), were investigated. We observed the variation of the transmittance and optical band gap with respect to deposition condition. The change of the transmittance and optical band gap of the DLC films were investigated as a function of RF power, working pressure, and additional gas. The optical band gap decreased with the increase of RF power and working pressure. We could verify the bond structures change of DLC films by observing the content of hydrogen using FT-IR spectroscopy. And the addition of hydrogen and nitrogen decreased the optical band gap by the breakage of C-H bond of DLC films during the deposition.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.219-222
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• 2003

In this paper, we designed a Ku-band BPF(Band Pass Filter) by microstrip line that most usually used a microwave device design and fabrication. Here a substrate of designed BPF were silicon substrate(${\varepsilon}_r=11.8$), and metal line was copper and silver/copper structure. And a configration of BPF was used hairpin pattern. A center frequency of designed BPF was 10GHz and their FBW(Fractional Band Width) was 20%(2GHz). It presented simulated results obtained for a 10GHz filter which yields an insertion loss of 0.1dB that ripple value related chebyshev reponse. Finallt we tried to make that a 30dB attenuation frequency was 20% of center frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.267-270
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• 2004

A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.