• Journal of the Korean Society of Food Science and Nutrition
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• v.15 no.2
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• pp.158-164
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• 1986

Polyphenol oxidase in apple (Golden Delicious) was extracted, partially purified and its properties were found as follows; Polyphenol oxidase showed optimum pH for activity at 6.5 and optimum temperature at $30^{\circ}C$ and high affinity to o-diphenol compounds. Cysteine, ascorbic acid and sodium metabisulfite appeared to be most effective inhibitors. EDTA showed a slight inhibition. During the enzyme was kept in test tube at $4^{\circ}C\;and\;20^{\circ}C$ for a week, polyphenol oxidase activity decreased sharply during the first four days at $20^{\circ}C$, then decreased slowly as the storage was prolonged. At $4^{\circ}C$, the polyphenol oxidase activity appeared to be relatively stable during the first two days before activity began to decline sharply. Polyacrylamide disc gel electrophoresis indicated four bands with polyphenol oxidase activity. Three bands and one band of the active bands were observed after heating for 1hr at $60^{\circ}C\;and\;70^{\circ}C$ respectively. The enzyme activity was observed 40% after treatment at $60^{\circ}C$ and 5% after treatment at $70^{\circ}C$. Therefore, no difference in the thermal stability was observed between active bands and the enzyme activity.

• Journal of the Korean Chemical Society
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• v.19 no.2
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• pp.92-97
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• 1975

The molecular and electronic structures of $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH\;and\;Ti(OC_6H_5)_4{\cdot}C_6H_5OH$ have been studied by employing cryoscopic and electronic spectroscopic methods. The cryoscopic data have shown that the dimeric tetraphenoxytitanium(Ⅳ) phenolate in solid undergoes complete dissociation into monomer in solution and also the chlorocomplex starts dissociation around the concentration of 8 m mole/l. Therefore, these two Ti-complexes are pentacoordinated in dilute solution and the local symmetry of the titanium ion in these complexes seems to be trigonalbipyramid. The electronic spectra of $TiCl(OC_6H_5)_3{\cdot}C_6H_5OH$ and $Ti(OC_6H_5)_4{\cdot}C_6H_5OH$ each show two band, systems, one vibration-structural band characteristic of the aromatic ring in the near UV and another visible band at 26.8 kK, 29.6 kK, respectively, which are assigned as a ligand to metal charge transfer band corresponding to $^1A_1''{\to}^1E'\;or\;^1E''$ transition.

• Proceedings of the Korean Society for Applied Microbiology Conference
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• 1986.12a
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• pp.505.1-505
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• 1986

The gene for iso-1-cytochrome c for Saccharomyces cerevisiae was recloned into a pSP65 vector containing an active bacteriophage SP6 promoter. The iso-1-cytochrome c gene was cloned as an 856 bp Xho 1-Hind III fragment. When the resulting plasmid was digested at the Hind 111 site 279 bases downstream from the termination codon of the gene and transcribed in vitro using SP6 RNA polymerase, full length transcripts were produced. The SP6 iso-1-cytochrome c mRNA was translated using a rabbit reticulocyte lysate system and the protein products analyzed on SDS polyacrylamide gels. One major band was detected by autofluorography. This band was found to have a molecular weight of 12,000 Da and coincided with the Coomassie staining band of apocytochrome c from S. cerebisiae. The product was also shown to be identical with that of standard yeast apocytochrome c on an isoelectric focusing gel. The in vitro synthesized iso-a-cytochrome c was methylated by adding partially purified S-adenosyl-L-methionine . protein-lysine N-methyltransferase (Protein methylase III; EC 2.1.1.43) from S. cerevisiae along with S-adenosyl-L-methionine to the in vitro translation mixtures. The methylation was shown to be inhibited by the addition of the methylase inhibitor S-adenosyl-L-homocysteine or the protein synthesis inhibitor pu omycin. The methyl derivatives in the protein were identified as $\varepsilon$-N-mono, di and trimethyllysine by amino acid analysis. The molar ratio of methyl groups incorporated to that of cytochrome c molecules synthesized showed that 23% of the translated cytochrome c molecules were methylated by protein methylase III.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.1 no.2
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• pp.73-79
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• 1968

The resolving capacities of xanthophyll pigments on thin-layers of Silica Gel, Hyflo super-Cel, and Micro-Cel C with varying concentrations of acetone in petroleum ether as the developing solvent were compared. The results showed that the resolving capacity of Micro-Cel C thin-layer was superior to others and satisfactory for the separation of leaf carotenoids in clearly separated six bands; carotenes, lutein-zeaxanthin, antheraxanthin, violaxanthin, an unidentified band, and neoxanthin, when it was developed with $13\%$ acetone-petroleum ether solution for 15 to 20minutes in an unsaturated chamber. Adhension of Micro-Cel C to glass was adequate without binder. Calcium sulfate used as a binder appeared to inactivate the resolving capacity of Micro-Cel C. Removing an about 0.2cm-wide layer on bo side of thin-layer slide helped to prevent 'edge effect' which gave tailing and faster solvent ascending along the side than the center. An adequate thickness of thin-layer was obtained when a 3 ml aliquot of the suspension in which l0g powdered Micro-Cel C was suspended in 75 ml distilled water was coated on a $2\times20cm$ glass slide.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.4
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• pp.99-106
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• 2001

An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

• Bulletin of the Korean Space Science Society
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• 2008.10a
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• pp.36.2-36.2
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• 2008

This paper presents the impact of Japanese radio source on the S-Band communication between KOMPSAT-2 satellite and TT&C ground system. Major specifications such as transmitting EIRP (Effective Isotropic Radiated Power) and location of Japanese terrestrial station were informed from Radio Research Laboratory in Korea Communication Commission. To estimate path loss in S-Band, the distance between Japanese station and TT&C ground system was obtained by using COTS (Commercial Off-The-Shelf) software. After that the signal strength of Japanese radio source placed at the TT&C ground system was calculated from link parameters such as transmitting EIRP, path loss, and receiving antenna gain. Consequently, this paper shows that the degradation caused by Japanese radio source is acceptable to TT&C ground system for satellite operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.13-16
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• 2001

반도체 동작시에 파워 손실을 최소화하는 것은 2000년대의 에너지, 산업전자, 정보통신 산업분야에서의 가장 주요한 요구 사항중의 하나이다. 실리콘계 반도체 소자들은 완전히 새로운 구동기구의 소자가 개발되지 않는 한, 실리콘 재료의 낮은 열전도율이나 낮은 절연파괴전계와 같은 물리적 특성한계 때문에 이러한 요구를 만족시키는 것이 불가능한 실정이다. 따라서 21세기를 위한 대안으로 고열전도융의 WBG(WideBand-Gap) 물질 그 중에서도 탄화규소(SiC) 반도체가 제시되고 있다. SiC 반도체는 실리콘에 비하여 밴드갭(band gap: $E_{g}$)이 높을 뿐만이 아니라 절연파괴강도 ($E_{B}$)가 한 자릿수 이상 그리고 전자의 포화 drift 속도, $V_{s}$ 및 열전도도 k가 3배 가량 크다. 따라서 SiC는 고온 동작 내지는 고내압, 대전류, 저손실 반도체를 제작하는데 아주 유리하다. 본고에서는 응용성이 넓고, 단결정 제조가 비교적 용이한 SiC 반도체의 기술현황에 대하여 살펴보고자 한다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.420-431
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• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.817-821
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• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.13-16
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• 2001

반도체 동작시에 파워 손실을 최소화하는 것은 2000년대의 에너지, 산업전자, 정보통신 산업분야에서의 가장 주요한 요구 사항중의 하나이다. 실리콘계 반도체 소자들은 완전히 새로운 구동기구의 소자가 개발되지 않는 한, 실리콘 재료의 낮은 열 전도율이나 낮은 절연파괴전계와 같은 물리적 특성한계 때문에 이러한 요구를 만족시키는 것이 불가능한 실정이다. 따라서 21세기를 위한 대안으로 고열전도율의 WBG(Wide Band-Gap) 물질 그 중에서도 탄화규소(SiC) 반도체가 제시되고 있다. SiC 반도체는 실리콘에 비하여 밴드 갭(band gap: E$_{g}$)이 높을 뿐만이 아니라 절연파괴강도(E$_{B}$)가 한 자릿수 이상 그리고 전자의 포화 drift 속도, v$_{s}$ 및 열전도도 k가 3배 가량 크다. 따라서 SiC는 고온 동작 내지는 고내압, 대전류, 저손실 반도체를 제작하는데 아주 유리하다. 본고에서는 응용성이 넓고, 단결정 제조가 비교적 용이한 SiC 반도체의 기술현황 에 대하여 살펴보고자 한다.