• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.311-315
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on AlN(0.1 $\mu$m)/3C-SiC(1.0 $\mu$m) suspended membranes by surface micro-machining technology. The 3C-SiC and AlN thin films which have wide energy band gap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3CSiC RTD(resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR(thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 ppm/$^{\circ}C$ within a temperature range from 25 $^{\circ}C$ to 50 $^{\circ}C$ and -1040 ppm/$^{\circ}C$ at 500 $^{\circ}C$. The micro heater generates the heat about 500 $^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than Pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.99-104
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• 2016

High purity Si-C (99.999%) powder prepared by mechanical alloying was added to a commercial SiC powder as a sintering additive. Reaction bonded silicon carbide balls and jars with high purity (99.98%) were used for the mechanical alloying. As a result, the purity of the sintered Si-C was higher than 99.99%. When sintered at $2200^{\circ}C$ under 50 MPa pressure for 1 h, SiC containing 10 wt% of high purity Si-C showed a relative density of 95.3%, similar to the relative density of commercial SiC (95%). However, the relative density of SiC decreased to 90.6% without the additive when the applied pressure decreased to 40 MPa. In contrast, the relative density was nearly unaffected by the decrease of the pressure when using the Si-C additive. Therefore, the addition of Si-C powder promoted the densification of SiC above $2000^{\circ}C$ under 40 MPa pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.626-631
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• 1997

AlSiCa powders were prepared from the domestic Hadong Kaolin ($Al_2O_3{\cdot}2SiO_2{\cdot}2H_2O$). As a result of the reaction of Hadong Kaolin and carbon powder at reducing atmosphere, $Al_2O_3{\cdot}SiC$ composite started to form at $1300^{\circ}C$ and completed at $1400^{\circ}C$. The optimum amount of carbon was 1:4 in mole ratio. It was found that only bright-green $\beta-SiC$ phase forms when the mixture was packed without carbon powder in alumina crucible.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.232-240
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• 1992

Densification behavior, microstructural evolution, and mechanical properties of hot-pressed specimens using $\beta$-SiC and $\alpha$-SiC powder with Al2O3 additive were studied. Beta-SiC powder was fully densified as 205$0^{\circ}C$, but $\alpha$-SiC powder was at 210$0^{\circ}C$. The maximum flexural strength and the fracture toughness of the specimen hot-pressed using $\beta$-SiC powder were 681 MPa and 6.7 MPa{{{{ SQRT {m } }}, and thosevalues of specimen hot-pressed using $\alpha$-SiC powder were 452 MPa and 4.7 MPa{{{{ SQRT {m } }}, respectively. The strength superiority of specimen hot-pressed using $\beta$-SiC powder was due to the finer grain size, and higher density. The higher toughness of specimen hot-pressed using $\beta$-SiC powder than $\alpha$-SiC powder than $\alpha$-SiC powder was due to the crack deflection mechanism arised from the difference of thermal expansion coefficient between $\alpha$ and $\beta$-SiC phases which were co-existed in the sintered body.

• Ceramist
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• v.13 no.6
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• pp.7-12
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• 2010

극한환경용 소재기술의 발전은 새로운 기기의 설계 및 제작을 가능하게 하고, 이에 따른 고효율 시스템의 운전을 실현할 수 있게 한다. 청정 에너지 확보, 에너지 전환 효율 극대화, 항공우주 기술의 확보 등 21세기 신성장 동력산업의 주요 이슈들은 시스템 운전여건을 고온의 극한 환경으로 처하게 한다. $SiC_f$/SiC 복합체는 우수한 고온 성능으로 고온 극한환경에 적용할 수 있는 잠재성을 지닌 소재로 항공우주 산업, 방위산업, 원자력 산업 및 에너지 산업에서 적용되고 있거나 적용이 검토되고 있다. 일본은 OASIS (Organization of Advanced Sustainability Initiative for Energy System/Material) 주도로 FEEMA 프로젝트에서 엔진부품용 $SiC_f$/SiC 복합체 개발을 추진 중이며, 유럽연합과 BA (Broad Approach) 프로젝트를 통하여 핵융합로 적용소재에 관한 연구를 수행 중이다. 또한 미국과 TITAN 공동프로젝트 내에서도 $SiC_f$/SiC 복합체에 대한 연구가 진행 중이다. 미국의 일본과의 TITAN외에도 일본원자력연구원 (JAEA) 및 프랑스 원자력연구소 (CEA)와도 공동연구를 수행하고 있다. 프랑스 CEA는 고온가스로의 피복재로 개발을 수행하고 있다. 이외에도 유럽연합은 RAPHAEL 프로그램과EXTREMAT 프로그램에서 $SiC_f$/SiC 복합체 개발을 수행하고 있다. 또한 소규모이지만 $SiC_f$/SiC 복합체의 상업적인 판매가 일본에서 시작되었고, 가까운 미래에 범용적으로 적용할 상업적인 판매를 시작하는 단계로 발전할 수 있으리라 생각된다. 이외에도 미국 ASME는 고온 설계코드 개발을 위한 준비를 진행 중이다. 아울러 가속화된 제조공정 기술 개발과 설계코드 및 DB 구축과 같은 소재 적용여건의 성숙은 $SiC_f$/SiC 복합체가 상용소재로 적용될 가능성을 높이고 있으며, 개량 후보소재에서 현용재로 적용될 시기를 앞당길 수 있는 계기가 되리라 생각된다. 따라서 국내에서 이에 걸맞는 체계적인 투자와 연구가 진행되어야하겠다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.195-196
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• 2009

This paper describes the fabrication and characteristics of polycrystalline 3C-SiC thin film diodes for extreme environment applications, in which the this thin film was deposited onto oxidized Si wafers by APCVD using HMDS In this work, the optimized growth temperature and HMDS flow rate were $1,100^{\circ}C$ and 8sccm, respectively. A Schottky diode with a Au, Al/poly 3C-SiC/$SiO_2$/Si(n-type) structure was fabricated and its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84V, over 140V, 61nm, and $2.7{\times}10^{19}cm^2$, respectively. To produce good ohmic contact, Al/3C-SiC were annealed at 300, 400, and $500^{\circ}C$ for 30min under a vacuum of $5.0{\times}10^{-6}$Torr. The obtained p-n junction diode fabricated by poly 3C-SiC had similar characteristics to a single 3C-SiC p-n junction diode.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.447-451
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• 2009

Continuous SiC fiber-reinforced SiC composites ($SiC_f$/SiC) were fabricated by electrophoretic deposition (EPD). Nine types of slurries with different powder contents, binder resin amounts and slurry pH were deposited on Tyranno$^{TM}$-SA fabrics by EPD at 135 V for ten minutes to determine the optimal conditions. Further EPD using the optimum slurry conditions was performed on fabrics with four different pyrolitic carbon (PyC) thicknesses. The density of the hot-pressed composites decreased with increasing PyC thickness due to the difficulty of infiltrating the slurry into the narrow gaps between the fibers. On the other hand, the mechanical strength increased with increasing PyC thickness despite the decrease in density, which was explained by the enhanced crack deflection with increasing PyC thickness. The $SiC_f$/SiC composites showed the highest density and flexural strength of 94% and 342 MPa, respectively, showing EPD as a feasible method for dense $SiC_f$/SiC fabrication.

• 연구논문집
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• s.26
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• pp.103-112
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• 1996

$Al_2O_3/SiC$ Hybrid-Composite has been fabricated by conventional powder process. The addition of $\alpha-Al_2O_3$ as seed particles in the transformation of $\gamma-Al_2O_3 to $\alpha-Al_2O_3$ provided a homogeneity of the microstructure, resulting in increase of mechanical properties. The grain growth of $Al_2O_3$ are significantly surpressed by the addition of nano-sized. SiC particles, increasing in fracture strength. The addition of SiC plates to $Al_2O_3$ nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC plates with nitrides such as BN and /SiC$Si_3N_4$ enhanced fracture toughness much more than uncoated SiC plates by inducing crack deflection.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.