• 제목/요약/키워드: C/C-SiC-Cu

검색결과 540건 처리시간 0.027초

Initial Responses of Quercus serrata Seedlings and Forest Understory to Experimental Gap Treatments

  • Cho, Yong-Chan;Kim, Jun-Soo;Lee, Chang-Seok;Cho, Hyun-Je;Bae, Kwan-Ho
    • Journal of Ecology and Environment
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    • 제32권2호
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    • pp.87-96
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    • 2009
  • Pinus thunbergii plantations in Pohang-si, Gyeongsangbuk-do, Korea, are of low ecological quality, with arrested succession and a high proportion of ruderal species. To improve the quality of the habitat, we created canopy gaps ($\sim42\;m^2$) and monitored changes in abiotic (light availability, canopy openness) and biotic (survival and growth of seedlings and understory communities) variables in 2007 and 2008 in plots that had received one of five types of treatment: cutting of canopy trees and removal of the understory (CU), cutting of canopy trees only (C), girdling of canopy trees and removal of the understory (GU), girdling of canopy trees (G) or control. Each treatment was applied to three replicate plots. Abiotic variables did not significantly differ among treatments. Survival rates of target species were slightly lower in the CU, G and control conditions. Based on logistic regression analysis, the only significant growth factor affecting survival was height growth. Positive effects of seedling height and leaf area growth on survival were also detected, but did not reach statistical significance. In treatment G, gradual improvement of overstory conditions and mitigation of competition by limitation of disturbance to the understory community were likely to have promoted seedling growth. There were no significant effects of gap treatments on changes in species abundance (cover and richness) and composition of understory between the study years. This result implies that the small gaps created in our study may be below the threshold size to affect understory growth. However, the results of this study are based on a short-term investigation of only two years. Long-term research is strongly recommended to clarify the effects of gap treatment on plant communities in afforested areas.

Adsorption Characteristics of Multi-Metal Ions by Red Mud, Zeolite, Limestone, and Oyster Shell

  • Shin, Woo-Seok;Kang, Ku;Kim, Young-Kee
    • Environmental Engineering Research
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    • 제19권1호
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    • pp.15-22
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    • 2014
  • In this study, the performances of various adsorbents-red mud, zeolite, limestone, and oyster shell-were investigated for the adsorption of multi-metal ions ($Cr^{3+}$, $Ni^{2+}$, $Cu^{2+}$, $Zn^{2+}$, $As^{3+}$, $Cd^{2+}$, and $Pb^{2+}$) from aqueous solutions. The result of scanning electron microscopy analyses indicated that the some metal ions were adsorbed onto the surface of the media. Moreover, Fourier transform infrared spectroscopy analysis showed that the Si(Al)-O bond (red mud and zeolite) and C-O bond (limestone and oyster shell) might be involved in heavy metal adsorption. The changes in the pH of the aqueous solutions upon applying adsorbents were investigated and the adsorption kinetics of the metal ions on different adsorbents were simulated by pseudo-first-order and pseudo-second-order models. The sorption process was relatively fast and equilibrium was reached after about 60 min of contact (except for $As^{3+}$). From the maximum capacity of the adsorption kinetic model, the removal of $Pb^{2+}$ and $Cu^{2+}$ were higher than for the other metal ions. Meanwhile, the reaction rate constants ($k_{1,2}$) indicated the slowest sorption in $As^{3+}$. The adsorption mechanisms of heavy metal ions were not only surface adsorption and ion exchange, but also surface precipitation. Based on the metal ions' adsorption efficiencies, red mud was found to be the most efficient of all the tested adsorbents. In addition, impurities in seawater did not lead to a significant decrease in the adsorption performance. It is concluded that red mud is a more economic high-performance alternative than the other tested adsorption materials for applying a removal of multi-metal in seawater.

Ag층을 이용한 Sn과 In의 무 플럭스 접합 (Fluxless Bonding Method between Sn and In Bumps Using Ag Capping Layer)

  • 이승현;김영호
    • 마이크로전자및패키징학회지
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    • 제11권2호
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    • pp.23-28
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    • 2004
  • 본 실험에서는 Ag 층을 이용한 무 플럭스 접합 공정을 개발하였으며 Ag의 유무에 따른 효과를 관찰하기 위해 In ($10{\mu}m$)과 Sn ($10{\mu}m$)솔더 및 Ag (100 nm)/In과 Ag/Sn 솔더를 thermal evaporation 방법으로 하부 금속층 위에 형성하였다. 접합부의 접촉저항과 전단 하중을 측정하기 위해 쿠폰시편을 제조하였으며 이리한 쿠폰시편은 $130^{\circ}C$에서 0.8, 1.6, 3.2 MPa의 접합압력을 가하여 30초간 접합을 실시하였다. 전단하중과 4단자 저항측정법을 이용하여 접합부의 특성을 분석하였으며 주사전자현미경(Scanning Electron Microscope), EDS (Energy Dispersive Spectrometry)과 X-ray mapping을 통해 접합부를 관찰하였다. 전단하중 측정 결과 0.8 MPa에서는 In-Sn 솔더의 접합이 이루어지지 않았으며 접합압력이 증가해도 Ag/In-Ag/Sn 시편의 전단하중 측정값이 In-Sn 시편에 비해 높게 나타났다. 접합부의 저항감은 $2-4\;m{\Omega}$을 나타내었으며 접합압력이 증가할수록 In-Sn 혼합층이 더 많이 관찰되었다.

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열자극발광 및 광자극발광 측정장치의 개발 (Development of Thermoluminescence and Optical Stimulated Luminescence Measurements System)

  • 박창영;정기수;이종덕;장인수;이정일;김장렬
    • Journal of Radiation Protection and Research
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    • 제40권1호
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    • pp.46-54
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    • 2015
  • 열이나 빛의 자극에 의한 물질의 발광현상, 즉 열자극발광(thermoluminescence, TL)과 광자극발광(optically stimulated luminescence, OSL)의 메커니즘을 규명하고, 이 현상을 방사선량의 측정에 활용할 수 있는 새로운 발광물질을 개발하는데 활용할 수 있는 측정장치를 개발하였다. 이는 열자극과 광자극을 동시에 가할 수 있는 장치로서, 열자극에 필요한 온도제어를 위하여 35 kHz의 정현파 전원으로 변환하여 스트립 형태의 발열부에 걸어주게 되며, 최대 $20K{\cdot}s^{-1}$의 온도상승률로 약 1K의 정밀도로 온도를 제어할 수 있었다. 광자극을 위한 광원으로 중심파장이 470 nm인 Luxeon V형 고휘도 LED 등 여러 파장영역의 LED나 레이저를 사용할 수 있도록 하였다. 대표적으로 470 nm의 LED로 $Al_2O_3$:C의 OSL을 측정하는 경우, 시료의 발광에서 자극광을 분리시키기 위하여 LED의 자극광은 단파장차단필터인 GG420을 통과시켜서 시료에 걸리게 하고, 시료의 발광은 대역통과필터인 UG11를 통과하여 광증배관에 걸리게 하였다. 아울러 시료에 따라 LED나 필터들을 다르게 조합할 수 있도록 하여 시료의 발광특성에 맞는 최적의 측정을 수행할 수 있다. PC로 측정장치의 전체적인 제어가 이루어지며 LabView로 개발한 제어프로그램은 그래픽사용자환경(GUI)으로 되어 있다. 이 연구를 통해서 개발한 장치로 LiF:Mg,Cu,Si와 $Al_2O_3$:C를 표준시료로 하여 TL과 OSL을 측정하였고, 이들의 발광특성이 기존에 알려진 특성을 재현하여 이 장치가 신뢰할 수 있는 성능을 내는 것을 확인할 수 있었다.

Characteristics of MOCVD Cobalt on ALD Tantalum Nitride Layer Using $H_2/NH_3$ Gas as a Reactant

  • 박재형;한동석;문대용;윤돈규;박종완
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.377-377
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    • 2012
  • Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

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나노 결정립 재료를 이용한 비접촉식 커플러의 설계 및 특성 (The Design and Characteristics of the Inductive Coupler Using the Nanocrystalline Materials)

  • 김종령;김현식;허정섭;이해연;이준희;오영우;변우봉
    • 한국자기학회지
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    • 제16권6호
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    • pp.300-304
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    • 2006
  • 저손실 고투자율 특성을 가지는 Fe-Si-B-Nb-Ci계 나노결정립 재료로 ${\alpha}-Fe$ 나노결정 자심재료를 제조하기 위한 열처리 온도 변화에서, $510^{\circ}C$의 열처리 조건에서 가장 높은 투자율과 가장 낮은 코어손실 특성을 나타내었다. 제조된 자심재료를 이용한 비접촉식 커플러 제조에서, 저주파 대역에서의 신호전송 특성은 자심재료의 자기적 특성에 지배적인 영향을 받는데 열처리 온도에 따른 투자율 변화의 결과와 일치하는 결과를 나타내었으며, 고주파 대역의 신호전송 특성은 임피던스 매칭으로 향상시킬 수 있었다. 그리고 300 A의 고전류가 흐르는 지중선로에서 자기적 포화 없이 안정적인 특성을 발휘하기 위해서는 $500{\mu}m$ 이상의 에어-갭이 필요하였다. 또한 나노 결정질 자심재료 제조에 대한 연구결과를 통해 5dB 이하의 삽입손실을 나타내는 전력선 통신용 비접촉식 커플러를 제조할 수 있었다.

전해도금 공정온도가 Co-Pt 합금 박막의 미세구조 및 자기적 특성에 미치는 영향 (Effects of process temperature on the microstructure and magnetic properties of electrodeposited Co-Pt alloy thin films)

  • 이창형;정근희;박정갑;이광근;서수정
    • 한국결정성장학회지
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    • 제18권2호
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    • pp.87-90
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    • 2008
  • Co-Pt 합금 박막은 amino-citrate 기반의 전해액에서 Ru(30 nm)/Ta(5 nm)/Si(100)구조의 작업 전극을 사용하여 정전류 전해도금 방법으로 증착 하였다. (0002) 우선 성장된 Ru의 buffer layers를 사용하여 Co-Pt 합금 박막의 결정구조와 우선 성장을 조절하였다. 본 실험에서는 도금액 온도를 변화시킴에 따른 Co-Pt 합금 박막의 자기적 성질과 미세구조에 미치는 영향을 고찰하였다. Co-Pt 합금 박막의 형상과 조성은 FESEM 과 EDS로 확인하였고, XRD로 결정구조를 분석하였다. 자기적 성질은 진동 시료 자력계와 토오크 자력계로 분석하였다. Co-Pt 합금 박막은 박막표면과 수직한 방향에서 열처리 없이 각각 6527 Oe의 높은 보자력과 0.93의 높은 각형비를 나타내었다.

Detailed Abundance Analysis for Plant Host Stars

  • 강원석;이상각;김강민
    • 천문학회보
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    • 제36권1호
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    • pp.27.1-27.1
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    • 2011
  • We obtained the spectra of 93 Planet host stars and 73 normal field stars in F, G, K type using BOES at BOAO. We measured the equivalent width of Fe and 25 elements lines using the automatic EW measurement program, TAME(Tools for Automatic Measurement of Equivalent-widths) and estimated the elemental abundances by synth and abfind driver of MOOG code. Since the absence of planets in the normal field stars cannot be "completely" proved, this work focused on the chemical abundances and planet properties of planet host stars, which have the massive planets close to the parent star relatively. We carried out an investigation for the difference of abundances between stars with "Hot Jupiter" and normal field stars with no known planets. We examined the chemical composition of 25 elements, such as C, N, O, S, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Sr, Y, Zr, Ba, Ce, Nd, and Eu by EW measurements, and the S abundances were estimated using synthetic spectrum. We have found that [Mg/Fe] and [Al/Fe] for planet host stars have lower limit comparing with those of comparison stars, and [Ca/Fe] of host star with Neptunian planets is relatively lower than the other host stars with massive planets. We have performed the Kolmogorov-Smirnov test, and examined the ratio of planet host stars to all stars for each bin of [X/H]. As a result, we noted that the O, Si, and Ca abfor undances are strongly related with the presence of planets.

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Properties Optimization for Perovskite Oxide Thin Films by Formation of Desired Microstructure

  • Liu, Xingzhao;Tao, Bowan;Wu, Chuangui;Zhang, Wanli;Li, Yanrong
    • 한국세라믹학회지
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    • 제43권11호
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    • pp.715-723
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    • 2006
  • Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

Na-A형 제올라이트의 합성 및 중금속에 대한 흡착능 (Synthesis of Na-A Type Zeolite and Its Ability to Adsorb Heavy Metals)

  • 채수천;장영남;배인국;이성기;류경원
    • 한국광물학회지
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    • 제21권1호
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    • pp.37-44
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    • 2008
  • 본 연구는 마포소각장에서 발생된 용융슬래그로부터 Na-A형 제올라이트를 합성하여 환경 저감재로 재활용키 위한 목적에서 수행되었다. 초기물질로 사용된 용융슬래그는 용제(flux)로 사용된 Fe 성분(19.6% of $Fe_2O_3$, and 18.9% of FeO)이 비교적 높기는 하지만, 상대적으로 제올라이트의 주요 성분인 $SiO_2$, $Al_2O_3$$Na_2O$가 각각 26.6%, 10.9% 및 2.7% 함유되어 제올라이트의 합성에 유리한 조성을 가지고 있다. 제올라이트의 수열합성은 $80^{\circ}C$에서 수행되었으며, $SiO_2/Al_2O_3\;=\;0.80{\sim}1.96$인 넓은 범위의 화학조성에서 Na-A형 제올라이트가 합성되는 것을 확인하였다. 제올라이트의 양이온 교환 능력은 10 h 이상의 합성시간에서 일정하게 거의 220 cmol/kg인 것으로 측정되었다. 합성된 제올라이트의 중금속 (As, Cr, Cd, Cu, Mn 및 Pb)에 대한 흡착능을 측정한 결과, As 및 Cr을 제외한 모든 중금속에서 높은 흡착율을 보였다. As와 Cr은 Eh-pH분석을 통해 각각 $HAsO_4^{2-}$$CrO_4^{2-}$인 이온상으로 존재하고 있음을 확인하였다. As와 Cr에 대한 제올라이트의 흡착률이 낮은 것은 이들 이온상들의 크기가 Na-A형 제올라이트의 pore size ($4\;{\AA}$)보다 상대적으로 큰 유효 이온반경($4\;{\AA}$, 직경 $8\;{\AA}$)을 가지고 있기 때문인 것으로 결론지었다.