• 한국환경보건학회지
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• 제14권1호
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• pp.1-9
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• 1988

석탄유도가스에 포함된 황화수소를 제거시킬 흡착제를 개발하기 위하여 알칼리 토금속, 천이원소 및 아연의 이온반경보다 이온반경이 작은 금속산화물을 산화아연에 첨가시켜 다공성 흡착제를 제조하였다. 600$\circ$C에서 이들 첨가시료를 2.09vol.% 황화수소와 질소가스 혼합기체로 반응시켜 초기속도를 측정하고, 같은 온도에서 사용된 흡착제를 공기로 재생시켰다. 사용된 금속산화물 첨가 흡착제중에서 CaO, TiO$_2$, $Fe_2O_3$, CuO, $Ga_2O_3$ 및 Si$_2$O가 ZnO 흡착제의 초기속도를 증가시켜 첨가제로 사용할 수 있음을 보였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.956-959
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• 2001

In die and mould industry, major material such as cemented carbide is broadly used for increasing the life time and decreasing the cost. It is also required the development for the skills of wire-cut electrical discharge machining(WEDM), but the WEDMed surface was found to be worst due to the attached components of wire. Precision machining method like lapping is necessary for obtaining high quality surface. The lapping compound such as Al2O3 and SiC and cast iron lap can be used for lapping process. The components of Cu and Zn were found WEDMed surface of the specimen. As the result, the low quality of precision was obtained and the heat damage layer of the specimen was occurred. The value of surface hardness was deteriorated, and therefore finish process was required.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.119-119
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• 2000

A new type of low voltage driven SrTiO3 varistor was investigated. $SrTi3_3$ sintered with CuO-SiO2 additions, the sintering temperature was reduced to 1250-1300C. With the sintering additives, the semiconducting SrTi03 was able to fabricate single time sintering in reducing atmosphere(95% N2 + 5% H2), The non-linear coefficient value was 10.3 and the operating voltage was about 7 V.

• 한국표면공학회지
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• 제29권5호
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.193-194
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• 2006

With the onging trend of weight saving in automobiles, the application of light alloys is increasing. Recently, aluminum powder metallurgy has been the subject of renewed attention due to the combination of lightweight of aluminium and the efficient material utilisation of the powder metallurgical process, which offer attractive benefits to potential end-users. This study is to explore the use of warm compaction process to aluminium powder metallurgy. This paper presents a detailed study of the effect of warm compression and sintering conditions on the resultant microstructures and mechanical properties of Al-Cu-Mg-Si PM blend.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.264.1-264.1
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• 2013

Graphene is a two-dimensional carbon material whose structure is one-atom-thick planar sheet of sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice. It has drawn significant attention with its distinguished structural and electrical properties. Extremely high mobility and a tunable band gap make graphene potentially useful for innovative approaches to electronics. Although mechanical exfoliation of graphite and decomposition of SiC surfaces upon thermal treatment have been the main method for graphene, they have some limitations in quality and scalability of as-produced graphene films. Solutionphase and solvothermal syntheses of graphene achieved a major improvement for processing, however for device fabrication, a reproducible method such as chemical vapor deposition (CVD) growth yielding high quality films of controlled thickness is required. In this research, we synthesized hexagonal graphene flakes on Cu foils by CVD method and controlled its coverage, density and the size of graphene domains by changing reaction parameters. It is important to control these parameters of graphene growth during synthesis in order to achieve tunable properties and optimized device performance.

• Korean Chemical Engineering Research
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• 제51권4호
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• pp.418-425
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• 2013

고정층 반응기를 사용하여 상압에서 에탄올로부터 방향족화합물 제조에 관한 ZSM-5 제올라이트의 금속성분 및 실리카/알루미나 비의 영향을 고찰하였으며, 반응온도, 중량공간속도(WHSV), 반응물인 에탄올에 물 및 메탄올 첨가 영향도 검토하였다. 촉매로는 Si/$Al_2$ 비율이 23~280 범위의 상용 ZSM-5에 Zn, La, Cu, Ga 성분을 함침시켜 촉매 활성 및 안전성 테스트에 사용하였다. 촉매의 특성분석을 위해 암모니아 승온탈착 실험($NH_3$-TPD)과 질소 흡-탈착실험을 수행하였다. 실험결과, 방향족화합물의 선택도에 관한 ZSM-5에 함침한 금속성분과 ZSM-5의 Si/$Al_2$비에 크게 영향을 받았는데, 함침금속은 Zn-La > Zn > La > Cu > Ga 순으로 감소하였으며, ZSM-5의 적절한 산점을 가진 Si/$Al_2$=50, 80에서 가장 우수하였다. 최적 반응온도($437^{\circ}C$)와 공간속도($0.8h^{-1}$)에서 방향족화합물의 선택도는 초기 72%에서 30시간 이후 56%로 서서히 감소하는 경향을 나타내었다.

• Journal of Magnetics
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• 제11권1호
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• pp.30-35
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• 2006

A thorough study about the influences of Mn substitution for Fe on the microstructure and magnetic characteristics of $Fe_{73.5-x}Mn-{x}Si_{13.5}B_{9}Nb_{3}Cu_1$ (x = 1, 3, 5) alloys prepared by the melt-spinning technique has been performed. Nanocomposites composed of nanoscale $(Fe,Mn)_{3}Si$ magnetic phase embedded in an amorphous matrix were obtained by annealing their amorphous alloys at $535^{\circ}C$ for 1 hour. The addition of Mn causes a slight increase in the mean grain size. The Curie temperatures of the initial amorphous phase and of the nanocrystals phase decreased, while the Curie temperature of the remaining amorphous phase remained nearly constant with increasing Mn content. Soft magnetic properties of the crystallized samples have been significantly improved by a proper thermal treatment. Accordingly, the giant magnetoimpedance effect is observed and ascribed to the increase of the magnetic permeability, and the decrease of the coercivity of the samples. The increased magnetic permeability is resulted from a decrease in the magnetocrystalline anisotropy and saturation magnetostriction.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.329-332
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• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].