• Journal of Environmental Health Sciences
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• v.14 no.1
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• pp.1-9
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• 1988

석탄유도가스에 포함된 황화수소를 제거시킬 흡착제를 개발하기 위하여 알칼리 토금속, 천이원소 및 아연의 이온반경보다 이온반경이 작은 금속산화물을 산화아연에 첨가시켜 다공성 흡착제를 제조하였다. 600$\circ$C에서 이들 첨가시료를 2.09vol.% 황화수소와 질소가스 혼합기체로 반응시켜 초기속도를 측정하고, 같은 온도에서 사용된 흡착제를 공기로 재생시켰다. 사용된 금속산화물 첨가 흡착제중에서 CaO, TiO$_2$, $Fe_2O_3$, CuO, $Ga_2O_3$ 및 Si$_2$O가 ZnO 흡착제의 초기속도를 증가시켜 첨가제로 사용할 수 있음을 보였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.956-959
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• 2001

In die and mould industry, major material such as cemented carbide is broadly used for increasing the life time and decreasing the cost. It is also required the development for the skills of wire-cut electrical discharge machining(WEDM), but the WEDMed surface was found to be worst due to the attached components of wire. Precision machining method like lapping is necessary for obtaining high quality surface. The lapping compound such as Al2O3 and SiC and cast iron lap can be used for lapping process. The components of Cu and Zn were found WEDMed surface of the specimen. As the result, the low quality of precision was obtained and the heat damage layer of the specimen was occurred. The value of surface hardness was deteriorated, and therefore finish process was required.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.119-119
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• 2000

A new type of low voltage driven SrTiO3 varistor was investigated. $SrTi3_3$ sintered with CuO-SiO2 additions, the sintering temperature was reduced to 1250-1300C. With the sintering additives, the semiconducting SrTi03 was able to fabricate single time sintering in reducing atmosphere(95% N2 + 5% H2), The non-linear coefficient value was 10.3 and the operating voltage was about 7 V.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.193-194
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• 2006

With the onging trend of weight saving in automobiles, the application of light alloys is increasing. Recently, aluminum powder metallurgy has been the subject of renewed attention due to the combination of lightweight of aluminium and the efficient material utilisation of the powder metallurgical process, which offer attractive benefits to potential end-users. This study is to explore the use of warm compaction process to aluminium powder metallurgy. This paper presents a detailed study of the effect of warm compression and sintering conditions on the resultant microstructures and mechanical properties of Al-Cu-Mg-Si PM blend.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.264.1-264.1
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• 2013

Graphene is a two-dimensional carbon material whose structure is one-atom-thick planar sheet of sp2-bonded carbon atoms densely packed in a honeycomb crystal lattice. It has drawn significant attention with its distinguished structural and electrical properties. Extremely high mobility and a tunable band gap make graphene potentially useful for innovative approaches to electronics. Although mechanical exfoliation of graphite and decomposition of SiC surfaces upon thermal treatment have been the main method for graphene, they have some limitations in quality and scalability of as-produced graphene films. Solutionphase and solvothermal syntheses of graphene achieved a major improvement for processing, however for device fabrication, a reproducible method such as chemical vapor deposition (CVD) growth yielding high quality films of controlled thickness is required. In this research, we synthesized hexagonal graphene flakes on Cu foils by CVD method and controlled its coverage, density and the size of graphene domains by changing reaction parameters. It is important to control these parameters of graphene growth during synthesis in order to achieve tunable properties and optimized device performance.

• Korean Chemical Engineering Research
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• v.51 no.4
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• pp.418-425
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• 2013

The catalytic conversion of ethanol to aromatic compounds ETA was studied over ZSM-5 heterogeneous catalysts. The effect of reaction temperature, weight hourly space velocity (WHSV), and addition of water and methanol, which are the potential impurities of bio-ethanol, on the catalytic performance was investigated in a fixed bed reactor. Commercial ZSM-5 catalysts having different Si/$Al_2$ ratios of 23 to 280 and modified ZSM-5 catalysts by addition of metal (Zn, La, Cu, and Ga) were used for the activity and stability tests in ETA reaction. The catalysts were characterized with ammonia temperature programmed desorption ($NH_3$-TPD) and nitrogen adsorption-desorption techniques. The results of catalytic performance revealed that the optimal Si/$Al_2$ ratio of ZSM-5 is about 50~80 and the selectivity to aromatic compounds decreases in the order of Zn/La > Zn > La > Cu > Ga for the modified ZSM-5 catalysts. Among these catalysts from the ETA reaction, Zn-La/ZSM-5 showed the best catalytic performance for the ETA reaction. The selectivity to aromatic compounds was 72% initially and 56% after 30 h over the catalysts at reaction temperature of $437^{\circ}C$ and WHSV of $0.8h^{-1}$.

• Journal of Magnetics
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• v.11 no.1
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• pp.30-35
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• 2006

A thorough study about the influences of Mn substitution for Fe on the microstructure and magnetic characteristics of $Fe_{73.5-x}Mn-{x}Si_{13.5}B_{9}Nb_{3}Cu_1$ (x = 1, 3, 5) alloys prepared by the melt-spinning technique has been performed. Nanocomposites composed of nanoscale $(Fe,Mn)_{3}Si$ magnetic phase embedded in an amorphous matrix were obtained by annealing their amorphous alloys at $535^{\circ}C$ for 1 hour. The addition of Mn causes a slight increase in the mean grain size. The Curie temperatures of the initial amorphous phase and of the nanocrystals phase decreased, while the Curie temperature of the remaining amorphous phase remained nearly constant with increasing Mn content. Soft magnetic properties of the crystallized samples have been significantly improved by a proper thermal treatment. Accordingly, the giant magnetoimpedance effect is observed and ascribed to the increase of the magnetic permeability, and the decrease of the coercivity of the samples. The increased magnetic permeability is resulted from a decrease in the magnetocrystalline anisotropy and saturation magnetostriction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.329-332
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• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].