• Korean Journal of Materials Research
• /
• v.26 no.6
• /
• pp.337-341
• /
• 2016

Cu-30 vol% SiC composites with relatively densified microstructure and a sound interface between the Cu and SiC phases were obtained by pressureless sintering of PCS-coated SiC and Cu powders. The coated SiC powders were prepared by thermal curing and pyrolysis of PCS. Thermal curing at $200^{\circ}C$ was performed to fabricate infusible materials prior to pyrolysis. The cured powders were heated treated up to $1600^{\circ}C$ for the pyrolysis process and for the formation of SiC crystals on the surface of the SiC powders. XRD analysis revealed that the main peaks corresponded to the ${\alpha}$-SiC phase; peaks for ${\beta}$-SiC were newly appeared. The formation of ${\beta}$-SiC is explained by the transformation of thermally-cured PCS on the surface of the initial ${\alpha}$-SiC powders. Using powder mixtures of coated SiC powder, hydrogen-reduced Cu-nitrate, and elemental Cu powders, Cu-SiC composites were fabricated by pressureless sintering at $1000^{\circ}C$. Microstructural observation for the sintered composites showed that the powder mixture of PCS-coated SiC and Cu exhibited a relatively dense and homogeneous microstructure. Conversely, large pores and separated interfaces between Cu and SiC were observed in the sintered composite using uncoated SiC powders. These results suggest that Cu-SiC composites with sound microstructure can be prepared using a PCS coated SiC powder mixture.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.11a
• /
• pp.73-77
• /
• 2002

Characteristics of Cu/Si/Cu ohmic contacts to n-type 4H-SiC were investigated systematically. The ohmic contacts were formed by rf sputtering of multi layer Cu/Si/Cu sputtered sequentially. The annealings were peformed With 2-Step using RTP in vacuum ambient. The specific contact resistivity($\rho$c), sheet resistance(Rs), contact resistance(Rc), transfer length(L$_{T}$) were calculated from resistance(R$_{T}$) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. Best results were obtained for a sample annealed at vacuum as $\rho$c = 1.0x10$^{-6}$ $\Omega$$\textrm{cm}^2$, Rc = 2$\Omega$ and L$_{T}$ = 1${\mu}{\textrm}{m}$. The physical properties of contacts were examined using XRO and AES. The results showed that copper silicide was formed on SiC and Cu was migrated into SiC.o SiC.

• Resources Recycling
• /
• v.19 no.4
• /
• pp.51-57
• /
• 2010

As a recycling of Si sludge from Si wafer process, a Si-SiC-CuO-C composite material was synthesized and investigated as an anode material for lithium batteries. The Si sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by organic washing, magnetic separation, and acid washing. The Si-SiC-CuO-C composite from the recovered Si-SiC mixture was prepared by high-energy mechanical milling. According to the electrochemical tests such as charge-discharge capacity and cycling behavior, it showed the improved cycle performance. The SiC and CuO-related phases were presumed to restrain the volume expansion of the anode and Fe, however, should be removed below 10 ppm prior to synthesis of the composite because it caused the capacity loss of the active material itself.

• Journal of the Korean Vacuum Society
• /
• v.5 no.4
• /
• pp.333-340
• /
• 1996

The properties of TiN as a barrier against Cu diffusion ere studied by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and capacitance-voltage(C-V) measurement. The sensitivities of the various methods were compared. Specimens with Cu/TiN/Ti/SiO2/Si structure were prepared by various deposition techniques and annealed at various temperatures ranging from $500^{\circ}C$ to $800^{\circ}C$ in 10%H2/90%Ar ambient for hours. As the effectiveness of the barrier property of TiN against Cu diffusion was vanished, the irregular-shaped sports were observed and outdiffused Si were detected on the surface of the Cu thin film. The C-V characteristics of the MOS capacitors varied drastically with annealing temperatures. In C-V measurement, the inversion capacitance decreased at annealing temperature range from $500^{\circ}C$ to $700^{\circ}C$ and increased remarkably at $800^{\circ}C$. These variations may be due to the Cu diffusion through TiN into $SiO_2$ and Si.

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.398-404
• /
• 2001

Effects of coating treatment of metallic Cu film on SiC for Al/SiC composite were studied. The Copper was deposited on SiC by electroless plating method. Al/sic composite was fabricated at temperature range of $670^{\circ}C$ to 90$0^{\circ}C$ under vacuum atmosphere. The wetting behavior of Al/SiC composite were analysed by SEM and XRD. The coating treatment on SiC improved wettability of Al melt on SiC considerably comparing to the non coated SiC. This improved wettability seems strongly concerned to the increase of chemical reactivity between coated layer and Al matrix. The improvement of wettability of Al melt on the Cu coated SiC was closely related to in the initial stage of reaction. The metallic film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film through the reaction with Al melt. The wetting behavior of the as-received SiC with Al melt was not uniform, indicated by the contact angles from less than $97^{\circ}$to more than $97^{\circ}$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1301-1302
• /
• 2006

Sintered composites of Al-8wt%Cu-10vol%SiCp were deformed by repressing or equal channel angular pressing(ECAP) at room temperature, $500^{\circ}C$ and $600^{\circ}C$. Repressing produced more densification than ECAP but resulted in much lower transverse rupture strengths. In both cases, deformation at room temperature and $500^{\circ}C$, resulted in much lower strengths than deformation at $600^{\circ}C$, and also caused the fracturing of some SiC particles. The higher bend strengths and less SiC fracturing at $600^{\circ}C$ are attributable to the presence of an Al-Cu liquid phase during deformation. The employment of copper coated SiC instead of bare SiC particles for preparing the composites was found not improving the properties.

• Journal of Korea Foundry Society
• /
• v.20 no.4
• /
• pp.254-259
• /
• 2000

Metal matrix composites(MMCs) reinforced with hard particles have many potential application in aerospace structures, auto parts, semiconductor package, heat resistant panels, wear resistant materials and so on. In this work, the effect of SiC partioel sizes(50 and 100 ${\mu}m$) and additional elements such as Si, Cu and Ti on the microstructure and the wear property of $Al-5Mg-X(Si,Cu,Ti)/SiC_p$ composites produced by pressureless infiltration method have been investigated using optical microscopy, scanning eletron microcopy(SEM) with EDS(energy dispersive spectrometry), hardness test, X-ray diffractometer(XRD) and wear test. In present study, the sound $Al-5Mg-X(Si,Cu,Ti)/SiC_p$(50 and 100 ${\mu}m$) composites were fabricated by pressureless infiltration method. The $Al-5Mg-0.3Si-O.1Cu-O.1Ti/SiC_p$ composite with $50 {\mu}m$ size of SiC particle has higher hardness and better wear property than any other composite with $100{\mu}m$ size of SiC particle produced by pressureless infiltration method. The hardness and wear property of $Al-5Mg/SiC_p$(50 and 100 ${\mu}m$) composites were enhanced by the addition of Si, Cu and Ti in Al-5%Mg matrix alloy.

• Journal of Korea Foundry Society
• /
• v.10 no.1
• /
• pp.43-49
• /
• 1990

The influences of Cu and Mg addition on wear properties of SiC particulate reinforced Al-Si metal(alloy) matrix composites were investigated. Metal matrix composites were prepared by combination of compocasting and hot pressing techniques. The main results obtained are as follows : 1) The composite with Mg addition exhibits letter wear resistance than that with Cu addition. It is considered that Mg addition improved wettability of matal matrix composite by the strong segregation to the SiC / Al matrix interface. 2) After homogenization treatment, it was found that the interfacial segregation of Mg was predominant, while that of Cu was not detected. 3) The SiC / Al-11Si eutectic composite exhibits better wear resistance than the SiC / Al-6Si hypoeutectic composite does. 4) It seems that the increase in the amount of Mg addition affects on the uniform dispersion of SiC particulates, on the refinement of microstructure and on age hardening and these effects cause wear resistance improvement of composites.

• Korean Journal of Materials Research
• /
• v.4 no.8
• /
• pp.877-887
• /
• 1994

Cu-Ni-Si-P alloys have been studied in order to develop connector material which has a favorable combination of strength, electrical conductivity, elastic limit, thermal softening resistence and bend formability. Three kinds of trial alloys with various nickel and silicon content were melted and cast, hot rolled at about $900^{\circ}C$ and cold rolled. Mechanical properties and electrical conductivities of these alloys annealed at $450^{\circ}C$, $500^{\circ}C$ and $550^{\circ}C$ were investigated. An alloy with the composition of Cu-2.7%Ni-0.53%Si-O.O29%P, which shows a favorable combination of high strength and high electrical conductivity, has been developed. Various characteristics of the alloy 1 connector material were evaluated and compared with phospher bronze(C521OR-H) and brass(C26OOR-EH) connector material.

• Journal of the Korean Vacuum Society
• /
• v.18 no.3
• /
• pp.203-207
• /
• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.