• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.87-89
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• 1998

The Y2O3 films on Si(111) was grown by ionized cluster beam depposition (ICBD) in ultrahigh-vacuum (UHV). The acceleration voltage and oxygen ppartial ppressure were fixed at 5 kV and 2$\times$10-5 Torr resppectively. The substrate tempperature was varied from 10$0^{\circ}C$ to $600^{\circ}C$ in order to find the deppendence of crystallinity of Y2O3 films on the substrate tempperature. The crystallinity of the films with the substrate tempperature studied using x-ray diffraction (XRD) and Rutherford backscattering sppectroscoppy (RES). Surface crystallinity and surface morpphology of the films were also investigated using the reflection high-energy electron diffraction (RHEED) and atomic force microscoppe (AFM) resppectively. The films grown at the substrate tempperature below 50$0^{\circ}C$showed the ppoly-crystalline structure of oxygen deficiency. On the contrary the single-crystalline structure was obtained at the substrate tempperature over 50$0^{\circ}C$ and the stochimetry was gradually matched as increasing the substrate tempperature. The surface morpphology showed the increase of the surface roughness as the substrate tempperature was increased upp to 50$0^{\circ}C$ The crystallinity of the film was not good and the minimum channeling yield $\chi$min was measured at 0.91 The stochiometric and high crystallinine film (surface $\chi$min=0.25) was obtained as the substrate tempperature increased upp to 60 $0^{\circ}C$ which indicate the tempperature was sufficient to migrate the depposited atom.

• Electrical & Electronic Materials
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• v.16 no.1
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• pp.60.1-60
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• 2003

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.1-8
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• 1998

The a-C:H films have been grown on the glass substrate by PECVD mathod, where plasma was generated with a 60Hz line power source. The carbonization is checked from peak intensities of D($sp^3$) and G($sp^2$) peaks in Raman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $C_2H_2$. Judging from above results, we can conclude that the best value for partial pressure of $C_2H_2$ in growing process of thick films is about 15%.

• Journal of the Korean institute of surface engineering
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• v.28 no.4
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• pp.225-235
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• 1995

To investigate the effects of pretreatment and substrate bias on the characteristics of the diamond thin films, the thin films were deposited on the p-type Si(100) wafer by MPECVD using mixtures of $H_2$, $CH_4$, and $O_2$ gases. Deposition was carried out at the substrate temperature of $900^{\circ}C$ and at the pressure of 40torr. The effect of the pretreatment on the film formation was the examined by using SiC and diamond powders as abrasive powders. Furthermore, the substrate bias effect on the formation of the diamond film was also examined. The highest nucleation density was observed for the pretreatment with 40~60$\mu\textrm{m}$ size of diamond powders and a negative bias potential(-50V). Many defects and(111) twins in the diamond films were observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.399-399
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• 2011

We studied the structural and optical characterization of zinc sulfide (ZnS) thin films by RF magnetron sputtering on glass substrates. The substrate temperature was varied in the range of 100$^{\circ}C$ to 400$^{\circ}C$. The XRD analyses indicated that ZnS films had cubic structures with (111) preferential orientation and grain size varied from 20 to 60 nm, increasing with substrate temperatures. The optical properties were carried out by UV-visible spectrophotometer. Transmission measurement showed that the films had more than 70% transmittance in the wavelength larger than 400 nm, and the absorption edge shifted to shorter wavelength with the increase of substrate temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.339-342
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• 1997

The optical properties of WO$_3$thin films deposited by RF magnetron reactive sputtering were studied. The substrate was an ITO(indium-tin-oxide) glass(100$\Omega$/ ). The optical properties are examined by different deposition conditions. RF power, substrate temperature, $O_2$concentraction. Ar flow rate, working pressure and thickness are 40~60W, 25~30$0^{\circ}C$, 10%, 54~72sccm, 5~20m7orr and 1200~2400$\AA$, respectively. All these films were colorless, light yellow and found to be amorphous in structure by X-ray diffraction analysis. When RF power, substrate temperature, $O_2$concentraction, Ar flow rate, working pressure and thickness are 40W, $25^{\circ}C$, 10%, 72sccm, 20mTorr and 2400$\AA$, respectively the values of transmittance of the WO$_3$thin films in visible region are about 80%.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.20-22
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• 1994

The preparation of $YBa_2Cu_4O_8$ thick film on Ag substrate by electrophoretic deposition was directly studied. Electrophoretic deposition was carried out in solution, which was composed of presintered $YBa_2Cu_4O_8$ powder, sodium, and 2-propanol as a solvent. The deposited thick films were heat-treated in $O_2$ at 815$^{\circ}$C for 12 hours and at 450$^{\circ}$C for 12 hours. We succeeded in obtaining superconducting $YBa_2Cu_4O_8$ films on Ag substrate. Even though the chemical reactions at the $YBa_2Cu_4O_8$/Ag interface occurred in the range of 10 ${\mu}$m, superconductivity was not depressed. The thickness of the films was in the range of 60-80 ${\mu}$ m. The characteristics of the films were examined by electric resistance measurements, X-ray diffraction, and SEM observations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.297-303
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• 2003

Mn-Ni-Co type thin films were prepared at various conditions by a rf magnetron sputtering system. At the condition. or substrate temperature of $300^{\circ}C$ and $Ar/O_2$= 10/0, a cubic spinel phase was obtained. When oxygen was included in process gas, a cubic spinel phase was not formed even after the thermal annealing at $900^{\circ}C$. The thermistor thin film had no other elements except Mn, Ni and Co. The infrared reflection spectra of the thermistor thin films showed that the films had somewhat high reflectance for incoming infrared ray with some angle. The etch rate of the thermistor thin films was about 63nm/min at a condition of DI water : $HNO_3$: HCl = 60 : 30 : 10 vol%. The B constant and temperature coefficient of resistance of the thermistor thin films were 3500 K and -3.95 %/K, respectively. The voltage responsivity of the thermistor thin film infrared sensor was 108.5 V/W and its noise equivalent power and specific detectivity were $5.1\times 10^{-7}$ W/$Hz^{-1/2}$ and $0.2\times 10^6$cm $Hz^{1/2}$/W, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.141.1-141.1
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• 2016

저분자 유기태양전지에 사용되는 zinc phthalocyanine(ZnPc)기반의 유기 2층 박막 구조인 ZnPc/C60와 ZnPc/C70에서, 열처리 온도에 따른 유기물층 계면의 변화, ZnPc 층의 격자상수와 응력 변화를 x-ray reflectivity와 GIWAXS 측정을 이용하여 연구하였다. C60 fullerene 층이 있는 ZnPc의 계면은 열처리 온도가 증가하면서 계면의 거칠기가 증가하였으나, C70 fullerene 층이 있을 때는 180도의 고온에서도 계면 거칠기가 증가하지 않고 안정한 상태를 유지하였다. Fullerene층이 있는 ZnPc는 단일 ZnPc 박막에 비해 압축 응력(compressive strain)을 더 받게 되나, 박막의 열처리 온도가 증가함에 따라 응력이 점진적으로 감소하게 된다. 특히 C70 fullerene 층이 있는 경우 ZnPc의 경우 180도에서 응력이 모두 사라진다. 이러한 fullerene 종류에 따른 박막의 응력과 계면의 안정성 특성은 표면 모폴로지에 영향을 주게 되어, ZnPC/C60 박막의 경우 ZnPc/C70에 비해 약 2배 큰 120nm의 grain을 갖게 된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.336-336
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• 2011

Over the past decades, organic semiconductors have been investigated intensely for their potential in a wide range of optoelectronic device applications since the organic materials have advantages for very light, flexible and low cost device fabrications. In this study, we fabricated small-molecule organic solar cells (OSCs) based on chloro[subphthalocyaninato]boron(III) (SubPc) as an electron donor and $C_{60}$ as an electron acceptor material. Recently SubPc, a cone-shaped molecule with $14{\pi}$-electrons in its aromatic system, has attracted growing attention in small-molecule OSC applications as an electron-donating material for its greater open-circuit voltage (VOC), extinction coefficient and dielectric constant compared to conventional planar metal phthalocyanines. In spite of the power conversion efficiency (PCE) enhancement of small-molecule OSC using SubPc and $C_{60}$, however, the study on the interface between donor-acceptor heterojunction of this system is limited. In this work, SubPc thin films at various thicknesses were deposited by organic molecular beam deposition (OMBD) and the evolution of surface morphology was observed using atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM). We also investigated the influence of film thickness and surface morphology on the PCE of small-molecule OSC devices.