• Title/Summary/Keyword: C$_{60}$ films

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Optical Properties of Silicon Nanoparticles and $C_{60}$ Thin Films Prepared by Pulsed Laser Ablation (Pulsed Laser Ablation으로 제작한 $C_{60}$ 및 Si 박막의 광학적 특성 분석)

  • Kim, M.S.
    • Journal of Power System Engineering
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    • v.9 no.4
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    • pp.118-123
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    • 2005
  • We have investigated the fabrication of Si nanoparticles and $C_{60}$ thin films by pulsed laser ablation. By atomic force microscopy(AFM), the laser-deposited $C_{60}$ thin film was verified to have surface far smoother than the surfaces of films produced by the conventional evaporation method. The Si deposited at a He atmosphere of 0.2 Torr was with about $60{\AA}$ height of the Si nanoparticles, suggesting that it was uniformly deposited. We observed visible green emissions spectra in the $Si/C_{60}$ multilayer films after laser annealing. It is considered that this green emissions is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ by laser annealing.

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Electrochemical Reactions of $C_{60}$ Films in the Presence of Water : An Electrochemical Quartz Crystal Microbalance Study

  • 서경자;신명순;전일철
    • Bulletin of the Korean Chemical Society
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    • v.17 no.9
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    • pp.781-786
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    • 1996
  • Mass transport behavior of C60 films on electrodes with different thicknesses has been studied by an Electrochemical Quartz Crystal Microbalance (EQCM) during electrochemical reduction-oxidation processes in the presence of water. C60 films were found to be reduced in the presence of water and they remains quite stable. In thin films, the mass on electrode decreased after a complete cycle while X-ray Photoelectron Spectroscopy (XPS) study does not support the existence or formation of C60-epoxides during electrochemical reduction processes in the presence of water or oxygen.

Visible light emission from $C_60$ and Si nanoparticle film by laser process (C60 및 Si 초미립자 박막의 Laser 반응에 의한 가시광선발광)

  • ;Hideomi Koinuma
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.598-601
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    • 2000
  • We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

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Preparation of Self-Assembled of $\alpha$-D-Mannosyl Fullerene[$C_{60}$]-Gold Nanoparticle Films (자기조립법에 의한 $\alpha$-D-만노실 풀러렌[$C_{60}$]-금 나노입자 필름 제조)

  • Yoon, Shin-Sook;Hwang, Sung-Ho;Ko, Weon-Bae
    • Elastomers and Composites
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    • v.43 no.4
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    • pp.264-270
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    • 2008
  • $\alpha$-D-mannosyl fullerene[$C_{60}$]-functionalized gold nanoparticle films were selfassembled using the layer-by-layer method on the reactive of glass slides functionlized with 3-aminopropyltrimethoxysilane. The functionalized glass slides were alternately soaked in the solutions containing $\alpha$-D-mannosyl fullerene[$C_{60}$] and 4-aminothiophenoxide/hexanethiolate-protected gold nanoparticles. $\alpha$-D-mannosyl fullerene[$C_{60}$]-functionalized gold nanoparticle films have grown up to 5 layers depending on the immersion time. The self-assembled nanoparticle films were characterized using UV-vis spectroscopy showed that the surface plasmon band of gold at 530 nm gradually became more evident as successive layers were added to the films.

Gas-Phase Technology and Microstructure of Fullerite Films

  • A.S. Berdinsky;Chun, Hui-Gon;Lee, Jing-Hyuk;Song, Yong-Hwa;Yu. V. Shevtsov
    • Journal of Surface Science and Engineering
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    • v.37 no.2
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    • pp.71-75
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    • 2004
  • The technology of $C_{60}$ fullerite films preparation by means of gas-phase deposition and structure of fullerite films are described. A three-channel flow plant was used to obtain fullerite films. The films were deposited in the flow of inert gas under reduced pressure onto a cooled silicon or sapphire substrate placed inside the reaction chamber of the plant. The plant allows one to obtain the films of pure fullerenes and to synthesise the films from fullerene compounds and doped fullerenes. The structure of two types of films were investigated by FE-SEM and SEM techniques: pure fullerite films onto silicon and sapphire substrates as well as compound films were studied by FE-SEM technique. All samples have shown columnar structure with high level of porosity. The synthesis of films composed of fullerene and its compounds for use in electronics is demonstrated to be promising. For example, experiments confirm the possibility to use fullerite films in sensor electronics to produce humidity and thermal sensors. It is also possible to use the sensitivity of these films to isotropic pressure. The experiments with $C_{60}$-Cu-J films have shown quite strong dependence of their resistance on pressure of different sort of medium-gas that could be used in gas-sensitive sensors. The structure and preparation technology of resistive sensor based on fullerite films are described.bed.

Ferroelectric Properties of the PZT(40/60)/(60/40) Heterolayered Thin Film Prepared by Sol-Gel Method (Sol-Gel법으로 제작한 PZT(40/60)/(60/40) 이종층 박막의 강유전특성)

  • 김경균;정장호;박인길;이성갑;이영희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.83-86
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    • 1998
  • Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.

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Electrochemical Properties of Buckminsterfullerene ($C_{60}$) in Acetonitrile Containing Quarternary Ammonium Electrolytes

  • Kim, Il Kwang;Kim, Hyun Jin;Oh, Gi Su;Jeon, Il Chol;Ahn, Byoung Joon
    • Analytical Science and Technology
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    • v.8 no.4
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    • pp.675-682
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    • 1995
  • Thin films of buckminsterfullerene($C_{60}$) formed by solution drop casting on Pt foil electrode surfaces were studied by cyclic voltammetry(CV) in acetonitrile(MeCN) containing quaternary ammonium or alkali-metal salts as supporting electrolyte. The electrochemical behaviors of $C_{60}$ films are found to be strongly dependent on the nature of the supporting electrolytes, especially with tetrabutyl ammonium perchlorate (TBAP, $NBu_4ClO_4$), and tetrabutyl ammonium tetrafluoroborate ($TBABF_4$, $NBu_4BF_4$). Reasonably stable films are formed into which electrons can be injected. The interaction of $C_{60}$ film with the quaternary ammonium cation may produce the fulleride salts $(TBA^+)(C{_{60}}^-)$ and $(TBA^+)_2(C{_{60}}^{2-})$. The bulk electroreduction with a controlled potential to generate the soluble $C{_{60}}^{3-}$ anions(dark red-brown color) is followed by electrooxidative deposition to produce a neutral $C_{60}$ film on the surface. The peak currents($I_{pc}$ and $I_{pa}$) of these thin film were dramatically decreased with repetitive potential scanning. These results could be explained by the adsorption-desorption phenomena and ion pairing interaction of reduced species($C{_{60}}^-$, and $C{_{60}}^{2-}$) onto the electrode surface. The peak current changes and peak potential shifts of the thin $C_{60}$ film in cyclic voltammograms formed from solution were observed by varying scan rates.

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Electrical and Optical Characteristics of X/40/60 PLZT Thin Films by Sol-Gel Processing (Sol-Gel 법에 의한 X/40/60 PLZT 박막의 전기 및 광학 특성)

  • 이진욱;마석범;강종윤;장낙원;박정흠
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.139-142
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    • 1996
  • X/40/60 PLZT thin films were prepared by sol-gel processing and annealed by rapid thermal annealing(RTA). X/40/60 PLZT thin films were crystallized at 75$0^{\circ}C$ for 5min by RTA. Hysteresis curves were narrowed and coercive field was decreased from 50kV/cm to 31.2 kV/cm and remnant polarization was also decreased from 14.3$\mu$C/$\textrm{cm}^2$ to 6.72$\mu$C/$\textrm{cm}^2$ as La mol% increased. Dielectric constanat and optical transmittance were increased with increasing La mol%.

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Influence of Temperature and pH on Adsorption of Ru(II) Dye from Aqueous Solution onto $TiO_2$ Films ($TiO_2$ 전극과 Ru(II) 염료와의 흡착에 있어서 온도 및 pH의 영향)

  • Hwang, Kyungjun;Yoo, Seungjoon;Shim, Wanggeum;Lee, Jaewook
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.11a
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    • pp.60.2-60.2
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    • 2010
  • A $TiO_2$ films in dye-sensitized solar cells was fabricated using $TiO_2$ colloidal sol prepared from titanium iso-propoxide used as a starting material by applying the sol-gel method. It was characterized by particle size analyzer, XRD, FE-SEM, and BET analysis. The adsorption isotherms of dye molecule on $TiO_2$ films were obtained at three different temperatures (30, 45, $60^{\circ}C$) and at three different pH (3, 5, 7). The adsorption kinetics of dye molecule on $TiO_2$ films were obtained at three different temperatures (30, 45, $60^{\circ}C$. The adsorption experimental data were correlated with Langmuir isotherm model and pseudo-second-order model. Also the isosteric enthalpies of dye adsorption were calculated by the Clausius-Clapeyron equation. In addition, the adsorption energy distribution functions which describe heterogeneous characteristics of nanocrystalline $TiO_2$ film surface were calculated by using the generalized nonlinear regularization method. We found that efficient adsorption of N719 dye from aqueous solution onto $TiO_2$ films can be successfully achieved by dye adsorption conditions and morphology of $TiO_2$ films.

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Preparation of Boron Doped Fullerene Film by a Thermal Evaporation Technique using Argon Plasma Treatment and Its Electrochemical Application

  • Arie, Arenst Andreas;Jeon, Bup-Ju;Lee, Joong-Kee
    • Carbon letters
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    • v.11 no.2
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    • pp.127-130
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    • 2010
  • Boron doped fullerene $C_{60}$ ($B:C_{60}$) films were prepared by the thermal evaporation of $C_{60}$ powder using argon plasma treatment. The morphology and structural characteristics of the thin films were investigated by scanning electron microscope (SEM), Fourier transform infra-red spectroscopy (FTIR) and x-ray photo electron spectroscopy (XPS). The electrochemical application of the boron doped fullerene film as a coating layer for silicon anodes in lithium ion batteries was also investigated. Cyclic voltammetry (CV) measurements were applied to the $B:C_{60}$ coated silicon electrodes at a scan rate of $0.05\;mVs^{-1}$. The CV results show that the $B:C_{60}$ coating layer act as a passivation layer with respect to the insertion and extraction of lithium ions into the silicon film electrode.