• Title/Summary/Keyword: Bulk diffusion

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Molecular Structural Characterization of Properties of Polymethacrylates by Molecular Modeling Techniques

  • Jung, Keun-Yung;Kim, Hyung-Il;Ju-Whan Liu
    • Macromolecular Research
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    • v.8 no.2
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    • pp.59-65
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    • 2000
  • We simulated the conformational changes of polymethacrylates which have side chains with different lengths (methyl and butyl) by molecular dynamics simulation technique. Bulk states of atactic amorphous polymers relaxed at a higher temperature were generated. The chain behaviors of polymethacrylates were investigated upon varying temperatures. Molecular structural information was then obtained by characterizing radial distribution function(RDF), mean square displacement, self diffusion constant, and Connolly surfaces, among others. The estimated self diffusion constants and RDF values of PMMA and PBMA were found to be in good agreement with our expectation in view of the chain flexibility.

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Recent Developments in Characterization of Ion-Exchange Membrane Processes: Impedance Spectroscopy for a Concentration Polarized Boundary Layer

  • Park, Jin-Soo;Moon, Seung-Hyeon
    • Proceedings of the Membrane Society of Korea Conference
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    • 2004.03a
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    • pp.1-11
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    • 2004
  • Ion-exchange membranes have been widely used in various applications such as diffusion dialysis, electrolysis, electrodialysis, fuel cell etc [1-2]. When an electric current passes through the membrane system, the current is carried by both positive and negative ions in the bulk solution phases, whereas it is carried mainly by the counter-ions in the membrane. (omitted)

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RECENT DEVELOppMENTS IN STUDIES ON DIAMOND FILMS BY ppLASMA CVD FOR FUTURE ELECTRONIC DEVICES

  • Hiraki, Akio
    • Proceedings of the Korean Vacuum Society Conference
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    • 1993.02a
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    • pp.6-6
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    • 1993
  • With brief instroduction of fabrication methods of dia.ond fillls by plasma CVD, recent progress in diamond research mainly done in the author's laboratory at Osaka University is reviewed.especially on the following topics: "low temperature diallond fabrication", "ion implantation", "hydrogen plasma treatment of ion-implanted diaaond to remove ion-induced damage", "Oxygen diffusion into the bulk assisted by the hydrogen treatllent", and "hole-burning effect".ffect".

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Influence of vinyl mulch on response of flue-cured tobacco to phosphorus.fertilizer. (비닐피복 재배가 황색종 담배의 인산비효에 미치는 영향)

  • 박수준
    • Journal of the Korean Society of Tobacco Science
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    • v.8 no.2
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    • pp.43-49
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    • 1986
  • Field experiment was conducted to investigate the effect of vinyl mulch on phosphate availability of soil and fertilizer in 1982. Growth of tobacco was more vigorous at each level of phosphate treatment in vinyl mulched than in bare soil. There was significant culture x Phosphorus treatment interaction for the yields of cured tobacco leaves. These results indicated that vinyl mulch was effective to improve phosphate availability of soil and fertilizer. Increase in soil temperature and maintenance of bulk density suitable for Phosphorus diffusion by vinyl mulch were likely to Play major roles on Phosphate availability, but other unknown factors appeared to be involved.

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An Experimental Study About The Intermittent Flow Field in The Transition Region of a Turbulent Round Jet (발달하는 원형제트의 간헐적 유동에 관한 실험적 연구)

  • 김숭기;조지룡;정명균
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.14 no.1
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    • pp.230-240
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    • 1990
  • An exprimental research has been carried out to find the intermittent flow pattern in the transition region of a turbulent round jet in order to elucidate detailed turbulence structure and to accumulate basic data necessary for computational turbulence modelling. Turbulent signals were processed digitally to obtain conventional or conditional velocity components. The high-order conditional correlations obtained in this study showed similar trends as those of other free shear flows. It was found that the non-turbulent fluid contributes negligibly to the turbulent kinetic energy production and its diffusive transport and that the diffusion by bulk convection has the same order of magnitude as the gradient diffusion in the free boundary region. The statistical analyses such as flatness factor, skewness factor and probability density functions of turbulent and non-turbulent zone durations have also been performed.

Optimization of the Phosphorus Doped BSF Doping Profile and Formation Method for N-type Bifacial Solar Cells

  • Cui, Jian;Ahn, Shihyun;Balaji, Nagarajan;Park, Cheolmin;Yi, Junsin
    • Current Photovoltaic Research
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    • v.4 no.2
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    • pp.31-41
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    • 2016
  • n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.

Effects of Ti Underlayer on Microstructure in Cu(B)/Ti/SiO2 Structure upon Annealing (Cu(B)/Ti/SiO2 구조를 열처리할 때 일어나는 미세구조 변화에 미치는 Ti 하지층 영향)

  • Lee Jaegab
    • Korean Journal of Materials Research
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    • v.14 no.12
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    • pp.829-834
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    • 2004
  • Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

Pharmaceutical Studies on Chitosan Matrix: Controlled release of aspirin from chitosan device

  • Lee, Chi-Young;Kim, Sung-Ho
    • Archives of Pharmacal Research
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    • v.10 no.2
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    • pp.88-93
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    • 1987
  • Chitosan ($\beta$-D-glucosaminan) is chemically prepared from chitin (N-acetyl-$\beta$- D-glucosaminan) which is an unutilized natural resource. We now report on the suitability of the chitosan matrix for use as vehicles for the controlled release of drugs. Salicylic acid and aspirin were used as model drugs in this study. The permeation of salicylic acid in the chitosan membranes was determined in a glass diffusion cell with two compartments of equal volume. Drug release studies on the devices were conducted in a beaker containing 5% sodium hydroxide solution. Partition coefficient (Kd) value for acetate membrane (472) is much greater than that for fluoro-perchlorate chitosan membrane (282). Higher Kd value for acetate chitosan membrane appears to be inconsisstent with the bulk salicylic acid concentration. The permeability constants of fluoro-perchlorate and acetate chisotan membranes for salicylic acid were 3.139 ${\times}10^{-7}cm^2$ min up to 60 min and that of 30% aspirin in the devices was 4.739${\times}10^{-7}cm^2$sec upto 60 min. As the loading dose of aspirin in a chitosan device increased, water up-take of chitosan device increased, but in case of salicylic acid it decreased. The release rate increased with increase in the molecular volume of the drugs. Thses result suggest that the release mechanism may be controlled mainly by diffusion through pores.

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Phosphorus Diffusion and Gettering in a Solar Cell Process using UMG Silicon (UMG 실리콘을 이용한 태양전지 공정에서 Phosphorus 확산과 게터링)

  • Yoon, Sung-Yean;Kim, Jeong;Choi, Kyoon
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.637-641
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    • 2012
  • Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.

Microstructures and Dielectric Properties of SrTiO$_3$-Based BL Capacitor with Content of Ca

  • 김충혁;최운식;이준웅
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.12 no.1
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    • pp.35-43
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    • 1999
  • Microstructures and dielectric properties of (Sr$\_$1-x/Ca$\_$x/) TiO$_3$-0.006Nb$_2$O$\_$5/ (0.05$\leq$x$\leq$0.2) boundary layer ceramics were investigated. The samples fired in a reducing atmosphere(N$_2$) were painted on the surface with CuO paste for the subsequent grain boundary diffusion, and then annealed at 1100$^{\circ}C$ for 2 hrs. The metal oxide of CuO infiltrated by thermal diffusion from surface of sample presents continuously in not grain but only grain boundary, and makes up thin boundary phase. The SEM photo, and EDAX revealed that CuO was penetrated rapidly into the bulk along the grain boundaries during the annealing. The average grain sizes is continuously increased as the content of substitutional Ca is increased from 5[mol%] to 15[mol%], but the average grain size of the sample with content of 20[mol%] Ca is slightly decreased. In the samples with content of 10∼15[mol%] Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss <0.3[%], and capacitance change rate as a function of temperature <${\pm}$10[%], respectively. All samples in this study exhibited dielectric relaxation with frequency as a functior of the temperature.

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