• Title/Summary/Keyword: Bulk diffusion

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Preparation and Its Properties of YBCO Superconductor Induced by Seeds

  • Shan, Y.Q.;Soh, D.W.;Fan, Z.G.;Men, M.F.;Wang, W.H.;Zhao, Z.X.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.491-493
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    • 1998
  • The SmBa$_2$Cu$_3$O$\sub$x/ single crystals were used as seeds to induced YBCO growth in MTG process. As the result, the large bulk oriented YBCO superconductors were prepared with dimension of plane 21mm and 32mm in diameter and 10mm in height. The typical Jc value of the sample is 6.5${\times}$10$^4$A/$\textrm{cm}^2$ and its flux float force is 4.6N/$\textrm{cm}^2$. The oxygen absorption in large bulk textured YBCO samples in pure oxygen was studied at several constant temperatures. It can be divided into two steps: a chemical reaction step and a diffusion step.

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Electrical Spin Transport in n-Doped In0.53Ga0.47As Channels

  • Park, Youn-Ho;Koo, Hyun-Cheol;Kim, Kyung-Ho;Kim, Hyung-Jun;Han, Suk-Hee
    • Journal of Magnetics
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    • v.14 no.1
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    • pp.23-26
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    • 2009
  • Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

Oxygen sensor for the low temperature-measurement using yttria stabilized zirconia(YSZ) electrolyte and Ag electrode (YSZ 전해질과 은 전극을 이용한 저온 산소센서에 대한 연구)

  • Yang, Young-Chang;Park, Chong-Ook
    • Journal of Sensor Science and Technology
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    • v.15 no.2
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    • pp.97-101
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    • 2006
  • Silver electrode having a high Electrocatalytic activity is oxygen-permeable electrode, in which oxygen ad-atoms are adsorbed and moved toward YSZ electrolyte by bulk diffusion. It is the different point in comparison to usual porous electrodes, especially platinum, which react with oxygen only in TPBs(Three Phase Boundaries). Also ad-atoms at TPBs of Pt are diffused to YSZ electrolyte by interfacial diffusion mechanism. These properties were used for turning down the operating temperature of YSZ from over $600^{\circ}C$ to below $450^{\circ}C$. The different heat-treatment temperature between a working electrode and a reference electrode suppresses the formation of silver oxides and reduces a volatility of Ag as well. Above all, these own characteristics and special processes of Ag improved a long-term stability of a oxygen sensor.

The decay phenomenon of II-VI compound semiconductors (II-VI 화합반도체소자의 열화현상)

  • Young Kwon Sung
    • 전기의세계
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    • v.17 no.2
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    • pp.16-26
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    • 1968
  • Cds is possible to add excess donors and to compensate partially using other group metals as acceptors. The impurities can ble incorporated either during crysta growth or by diffusion into a bulkcrystal. The addition of rimpurities leads also to the production of vacancies in a manner depending on the atmosphere surrounding the crystal during growth, during the diffusion process or using bulk. Cds of the mentioned above affects spectral sensitivity, speed of response, the variation on photocurrent, electron life time, and decay of photoconductivity with temperature and with intensity of illumination. In the work to be deseribed, these properties have been studied between liquid nitrogen and room temperature. In addition, the electron trap distribution has been correlated with speed of response, variation of photocurrent with temperature in various atmosphere. Four major trapping levels have been observed, and their identification with impurity and vacancy levels is discussed. And also the effects of lattice imperfections on the photoconductive properties CdS were investigated in detail.

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Molecular Dynamics Study on Oxygen Ions Diffusion of Gd-doped Ceria (Gd-doped Ceria의 산소이온 확산에 대한 분자동력학법 연구)

  • 강은태;김희승
    • Journal of the Korean Ceramic Society
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    • v.38 no.8
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    • pp.698-704
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    • 2001
  • Doped ceria의 전기전도도는 도핑 원소의 종류와 양에 큰 의존성을 가지고 특정 조성에서 최대 전도도 값을 가지며 높은 dopant 농도에서는 전기전도도는 감소한다. 이런 현상은 dopant와 산소 빈자리 사이의 회합 형성과 관련이 있다고 알려져 있다. 그러나 Gd 이온이 도핑된 ceria의 경우 주된 회합종이 (2G $d_{Ce}$ $V_{o}$ )인지 (G $e_{Ce}$ $V_{o}$ ) 인지는 명확하게 알려져 있지 않다. 본 연구에서는 회합분포가 전기전도도에 미치는 영향을 연구하기 위해 결함의 회합종과 분포가 다른 3가지 경우에 대해서 시뮬레이션을 행하였다. 분자동력학법을 이용하여 다양한 온도와 다른 회합분포의 경우에 대해 산소 확산계수가 계산되어졌으며, 계산된 산소 확산계수는 실험적으로 결정된 bulk 전도도로부터 얻어진 산소 확산계수와 비교되어졌다. 그 결과 (2G $d_{Ce}$ $V_{o}$ )와 (G $e_{Ce}$ $V_{o}$ ) 회합이 공존하며 이들이 통계학적으로 이항 분포를 가지는 경우가 실험적으로 보고된 값과 가장 일치하는 결과를 얻을 수 있었다.

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Gettering of Metal Impurity in UMG Silicon Wafer using Phosphorus Diffusion (UMG 실리콘 기판의 Phosphorus 확산을 이용한 금속불순물 게터링)

  • Yoon, Sung-Yean;Kim, Jeong;Kim, Eun-Young;Eum, Jung-Hyun;Choi, Kyoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.236-236
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    • 2010
  • P-type의 단결정, 다결정, UMG 기판을 이용하여 phosphorus툴 확산시킨 후 열처리한 external gettering 방식으로 실리콘 내부에 있는 불순물을 제거하였고, 기판의 lifetime 변화를 $\mu$-PCD를 이용하여 측정하였다. phosphorus를 $850^{\circ}C$에서 기판 내부로 20분 확산시킨 후 기판의 온도와 시간을 변화시키면서 gettering 공정을 시행하였다. 에미터층으로 인해 기판의 bulk lifetime이 부정확해 지는 것을 방지하기 위해서 NaOH를 이용하여 에미터층을 제거한 후 $\mu$-PCD를 이용하여 lifetime을 측정하였다. 또한 기판의 표면효과를 최소화하기 위해서 lifetime 측정전에 iodine을 이용하여 표면 passivation을 하였다.

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H13소재의 쇼트피닝과 이온질화에의한 표면경화

  • Jo, Gyun-Taek;Son, Seok-Won;Yu, Gwang-Chun;Lee, Yeong-Guk;Lee, Won-Beom
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.58-59
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    • 2012
  • Surface hardening mechanism of H13 steel was investigated when ion niriding after shot peening process was applied. Severe plastic deformation induced nanocrystallized grains at surface region. Higher nitrogen concentration was achieved in ion nitrided specimen with shot peening treatment than in single nitrided specimen. The elemental mapping on chromium and nitrogen by TEM-EELs showed chromium dissolved in matrix enhanced bulk nitrogen diffusion at surface region. Higher nitrogen diffusion also caused lattice distortion. Nano-sized grains, higher nitrogen concentration, and lattice diffustion contributed to the surface hardening.

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Product Phase Control During Interdiffusion Reactions (상호 확산 반응 중의 생성상 제어)

  • Park, Joon-Sik;Kim, Ji-Hoon;Perepezko, John R.
    • Journal of Korea Foundry Society
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    • v.26 no.1
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    • pp.27-33
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    • 2006
  • Phase evolutions involving nucleation stages together with diffusional growth have been examined in order to provide a guideline for determining rate limiting stages during phase evolutions. In multiphase materials systems in coatings, composites or multilayered structures, diffusion treatments often result in the development of metastable/intermediate phases at the reaction interfaces. The development of metastable phases during solid state interdiffusion demonstrates that the nucleation reaction can be one controlling factor. Also, the concentration gradient and the relative magnitudes of the component diffusivities provide a basis for a phase selection and the application of a kinetic bias strategy in the phase selection. For multicomponent alloy systems, the identification of the operative diffusion pathway is central to control phase formation. Experimental access to the nucleation and growth stage is discussed in thin film multi layers and bulk samples.

Electromagnetic Properties of Nano Composite Conductor (나노 복합전도체의 전기자기적 특성 연구)

  • Lee, Sang-Heon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.106-109
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    • 2016
  • The YBaCuO superconducting bulks were prepared by the thermal diffusion process involving the peritectic reaction to investigate the effect on microstructure and superconductivity. All the diffused YBaCuO could be successively separated from superconducting 123 phase by applying the thermal diffusion process. Electromagnetic properties of treated and untreated YBaCuO superconductor were evaluated to investigate the pinning effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the thermal treated superconducting bulk than that in the untreated one, indicating that the pinning centers of magnetic flux are related closely to the occurrence mechanism of the magnetic effect.

Growth of GaAs Crystals by synthesis Solute Diffusion Method (합성 용질 확산법에 의한 GaAs결정 성장에 관하여)

  • 문동찬;정홍배;이영희;김선태;최영복
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.1
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    • pp.56-62
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    • 1992
  • The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.