• Journal of the Korean Ceramic Society
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• v.42 no.4
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• pp.251-259
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• 2005

In order to characterize the influence of the reaction-site density on the cathodic polarization property of LSCF, we chose the porosity of LSCF as a main controlling variable, which is supposed to be closely related with active sites for the cathode reaction. To control the porosity of cathodes, we changed the mixing ratio of fine and coarse LSCF powders. The porosity and pore perimeter of cathodes were quantitatively analyzed by image analysis. The electrochemical half cell test for the cathodic polarization was performed via 3-probe AC-impedance spectroscopy. According to the investigation, the reduction of oxygen at LSCF cathode was mainly controlled by following two rate determining steps; i) surface diffusion and/or ionic conduction of ionized oxygen through bulk LSCF phase, ii) charge transfer of oxygen ion at cathode/electrolyte interface. Moreover, the overall cathode polarization was diminished as the cathode porosity increased due to the increase of the active reaction sites in cathode layer.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.990-997
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• 1998

In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.

• Journal of the Korean Society for Precision Engineering
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• v.3 no.1
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• pp.40-49
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• 1986

Crack, craze and void are common defects which may be found in the bulk of polymeric materials such as either themoplastics or thermosets. The healing phenomena, autohesion, of these defects are known to be a intrinsic material property of various polymeric materials. However, only a few experimental and theoretical investigations on crack, void and craze healing phenomena for various polymeric materials have been reported up to date [1, 2, 3]. This may be partly due to the complications of healing processes and lacking of appropriate theoretical developments. Recently, some investigators have been urged to study the healing phenomena of various polymenic materials since the significance of the use of polymer based alloys or composites has been raised in terms of specific strength and energy saving. In the earlier published reports [1, 2, 3, 4], the crack and void healing velocity, healing toughness and some other healing mechanical and physical properties were measured experimentally and compared with predicted values by utilizing a simple model such as the reptation model under some resonable assumptions. It seems, however, that the general acceptance of the proposed modeling analyses is yet open question. The crack healing processes seem to be complicate and highly dependent on the state of virgin material in terms of mechanical and physical properties. Furthermore, it is also strongly dependent on the histories of crack, craze and void development including fracture suface morphology, the shape of void and the degree of disentanglement of fibril in the craze. The rate of crack healing may be a function of environmental factors such as healing temperature, time and pressure which gives different contact configurations between two separated surfaces. It seems to be reasonable to assume that the crack healing processes may be divided in several distinguished steps like stress relaxation with molecular chain arrangement, surface contact (wetting), inter- diffusion process and com;oete healing (to obtain the original strength). In this context, it is likely that we no longer have to accept the limitation of cumulative damage theories and fatigue life if it is probable to remove the defects such as crack, craze and void and to restore the original strength of polymers or polymer based compowites by suitable choice of healing histories and methods. In this paper, we wish to present a very simple and intuitive theoretical model for the prediction of healed fracture toughness of cracked or defective polymeric components. The central idea of this investigation, thus, may be the modeling of behavior of chain molecules under healing conditions including the effects of chain scission on the healing processes. The validity of this proposed model will be studied by making comparisons between theoretically predicted values and experimentally determined results in near future and will be reported elsewhere.

• Korean Journal of Soil Science and Fertilizer
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• v.23 no.1
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• pp.8-14
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• 1990

Retardation and hydrodynamic dispersion coefficient necessary for model of water and solute movement in a soil were determined for horizontal soil column with different initial soil water conditions. The soil columns were compacted with sandy loam soil. The bulk density was $1,350+50kg/m^3$, and initial water contents were 0.05, 0.08 and 0.14. Advancement of 0.05% $CaSO_4$ solution was used as the standard and advancements of 0.5% KCl, $CaCl_2$ and $KH_2PO_4$ were compared. Retardation of non-reactive $Cl^-$ was related with the initial soil water content, ${\theta}n$, as ${\theta}/({\theta}-{\theta}n)$, and anion exclusion was ignored. Retardations of active $K^+$, $Ca^{{+}{+}}$ and $H_2PO_4{^-}$ were related as 1/(R+1) $^*{\theta}/({\theta}-{\theta}n)$, in which R was retardation coefficient. Measured R was 0.64 for $K^+$, 0.80 for $Ca^{{+}{+}}$ and 2.6 for $H_2PO_4{^-}$, respectively. Calculated R using Langmuir adsorption isotherm showed fair degree of applicability. Soil water diffusivity, $D({\theta}),m^2/sec$, calculated for different initial water content showed unique function as $$log(D({\theta}))=13.448{\theta}-9.288$$ Hydrodynamic dispersion coefficient of $Cl^-$ above soil water content 0.36 was similar to soil water diffusivity and decreased to near self diffusion coefficient at soil water content near 0.2. Those of $K^+$, $Ca^{{+}{+}}$ $H_2PO_4{^-}$ at soil water content of 0.38 were $5.5{\times}10^{-6}$, $2.4{\times}10^{-6}$ and $7.1{\times}10^{-7}m^2/sec$ and decreased rapidly with decreasing soil water content lower than 0.36.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Membrane Journal
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• v.9 no.4
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• pp.230-239
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• 1999

Perchlorate ion-selective electrodes in PVC membranes that respond linearly to concentration 106 M were developed by incorporating the quaternary phosphonium salts as a canier. The effects of the chemical structure, the contents of canier, the kind of plasticizer and the membrane thickness on electrode characteristics such as the electrode slope, the linear respone range and the detection limit were studied. With this results, the detectable pH range, selectivity coefficients and AC impedance characteristics were compared and investigated. The perchlorate ion substituents of the quaternary phosphonium salts like tetraoctylphosphonium perchlorate (TOPP) , tetraphenylphosphonium perchlorate(TPPP), and tetrabutylphosphonium perchlorate(TBPP) as a canier were used. The electrode characteristics were better in the ascending order of TBPP < TPPP < TOPP, with the increase of carbon chain length of the alkyl group. Dioctylsebacate(OOS) was best as a plasticizer, the canier contents were better with 11.76 wt% and the optimum membrane thickness was 0.19 mm. Under the above condition, the electrode slope was 56.58 mV/$^P{ClO}_4$,the linear response range was $10^{-1}$\times$10^{-6}$ M, the detection limit was 9.66 x $10^{-7}$ M. The performance of electrode was better than Orion electrode. The electrode potential was stable within the pH range from 3 to 11. The order of the selectivity coefficients for the perchlorate ion was sol < F < Br < 1. With the result of impedance spectrum, it was found that the equivalent circuit for the electrode could be expressed by a series combination of solution resistance, parallel circuit consisting of the double layer capacitance and bulk resistance and Warburg impedance. And solution resistance was almost not appeared and Warburg impedance was highly appeared by diffusion. Then Warburg coefficient was 1.32$\times$$10^74 $\Omega$ $\cdot$ ${cm}^2/s^{1/2}$.