• 제목/요약/키워드: Bulk diffusion

검색결과 186건 처리시간 0.024초

Molecular Structural Characterization of Properties of Polymethacrylates by Molecular Modeling Techniques

  • Jung, Keun-Yung;Kim, Hyung-Il;Ju-Whan Liu
    • Macromolecular Research
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    • 제8권2호
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    • pp.59-65
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    • 2000
  • We simulated the conformational changes of polymethacrylates which have side chains with different lengths (methyl and butyl) by molecular dynamics simulation technique. Bulk states of atactic amorphous polymers relaxed at a higher temperature were generated. The chain behaviors of polymethacrylates were investigated upon varying temperatures. Molecular structural information was then obtained by characterizing radial distribution function(RDF), mean square displacement, self diffusion constant, and Connolly surfaces, among others. The estimated self diffusion constants and RDF values of PMMA and PBMA were found to be in good agreement with our expectation in view of the chain flexibility.

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Recent Developments in Characterization of Ion-Exchange Membrane Processes: Impedance Spectroscopy for a Concentration Polarized Boundary Layer

  • Park, Jin-Soo;Moon, Seung-Hyeon
    • 한국막학회:학술대회논문집
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    • 한국막학회 2004년도 첨단 분리막 연구동향
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    • pp.1-11
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    • 2004
  • Ion-exchange membranes have been widely used in various applications such as diffusion dialysis, electrolysis, electrodialysis, fuel cell etc [1-2]. When an electric current passes through the membrane system, the current is carried by both positive and negative ions in the bulk solution phases, whereas it is carried mainly by the counter-ions in the membrane. (omitted)

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RECENT DEVELOppMENTS IN STUDIES ON DIAMOND FILMS BY ppLASMA CVD FOR FUTURE ELECTRONIC DEVICES

  • Hiraki, Akio
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1993년도 제4회 학술발표회 논문개요집
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    • pp.6-6
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    • 1993
  • With brief instroduction of fabrication methods of dia.ond fillls by plasma CVD, recent progress in diamond research mainly done in the author's laboratory at Osaka University is reviewed.especially on the following topics: "low temperature diallond fabrication", "ion implantation", "hydrogen plasma treatment of ion-implanted diaaond to remove ion-induced damage", "Oxygen diffusion into the bulk assisted by the hydrogen treatllent", and "hole-burning effect".ffect".

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비닐피복 재배가 황색종 담배의 인산비효에 미치는 영향 (Influence of vinyl mulch on response of flue-cured tobacco to phosphorus.fertilizer.)

  • 박수준
    • 한국연초학회지
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    • 제8권2호
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    • pp.43-49
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    • 1986
  • Field experiment was conducted to investigate the effect of vinyl mulch on phosphate availability of soil and fertilizer in 1982. Growth of tobacco was more vigorous at each level of phosphate treatment in vinyl mulched than in bare soil. There was significant culture x Phosphorus treatment interaction for the yields of cured tobacco leaves. These results indicated that vinyl mulch was effective to improve phosphate availability of soil and fertilizer. Increase in soil temperature and maintenance of bulk density suitable for Phosphorus diffusion by vinyl mulch were likely to Play major roles on Phosphate availability, but other unknown factors appeared to be involved.

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발달하는 원형제트의 간헐적 유동에 관한 실험적 연구 (An Experimental Study About The Intermittent Flow Field in The Transition Region of a Turbulent Round Jet)

  • 김숭기;조지룡;정명균
    • 대한기계학회논문집
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    • 제14권1호
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    • pp.230-240
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    • 1990
  • 본 연구에서는 원형제트의 천이영역에서 속도신호를 측정하고 이로부터 간헐 도와 간헐주파수를 구하며 이를 사용한 지역평균법으로 난류특성량들을 구하여 천이영 역에서의 난류구조를 해석하고 난류 모델링을 위해 필요한 기초자료를 제공하고자 한 다. 난류강도, 레이놀즈응력, 속도성분의 3차상관 관계등의 레이놀즈평균과 지역평 균들을 제시하였고, 편평도, 비대칭도등의 통계학적인 해석과 확산항에 대한 검토도 행하였다.

Optimization of the Phosphorus Doped BSF Doping Profile and Formation Method for N-type Bifacial Solar Cells

  • Cui, Jian;Ahn, Shihyun;Balaji, Nagarajan;Park, Cheolmin;Yi, Junsin
    • Current Photovoltaic Research
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    • 제4권2호
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    • pp.31-41
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    • 2016
  • n-type PERT (passivated emitter, rear totally diffused) bifacial solar cells with boron and phosphorus diffusion as p+ emitter and n+ BSF (back surface field) have attracted significant research interest recently. In this work, the influences of wafer thickness, bulk lifetime, emitter, BSF on the photovoltaic characteristics of solar cells are discussed. The performance of the solar cell is determined by using one-dimensional solar cell simulation software PC1D. The simulation results show that the key role of the BSF is to decrease the surface doping concentration reducing the recombination and thus, increasing the cell efficiency. A lightly phosphorus doped BSF (LD BSF) was experimentally optimized to get low surface dopant concentration for n type bifacial solar cells. Pre-oxidation combined with a multi-plateau drive-in, using limited source diffusion was carried out before pre-deposition. It could reduce the surface dopant concentration with minimal impact on the sheet resistance.

Cu(B)/Ti/SiO2 구조를 열처리할 때 일어나는 미세구조 변화에 미치는 Ti 하지층 영향 (Effects of Ti Underlayer on Microstructure in Cu(B)/Ti/SiO2 Structure upon Annealing)

  • 이재갑
    • 한국재료학회지
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    • 제14권12호
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    • pp.829-834
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    • 2004
  • Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

Pharmaceutical Studies on Chitosan Matrix: Controlled release of aspirin from chitosan device

  • Lee, Chi-Young;Kim, Sung-Ho
    • Archives of Pharmacal Research
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    • 제10권2호
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    • pp.88-93
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    • 1987
  • Chitosan ($\beta$-D-glucosaminan) is chemically prepared from chitin (N-acetyl-$\beta$- D-glucosaminan) which is an unutilized natural resource. We now report on the suitability of the chitosan matrix for use as vehicles for the controlled release of drugs. Salicylic acid and aspirin were used as model drugs in this study. The permeation of salicylic acid in the chitosan membranes was determined in a glass diffusion cell with two compartments of equal volume. Drug release studies on the devices were conducted in a beaker containing 5% sodium hydroxide solution. Partition coefficient (Kd) value for acetate membrane (472) is much greater than that for fluoro-perchlorate chitosan membrane (282). Higher Kd value for acetate chitosan membrane appears to be inconsisstent with the bulk salicylic acid concentration. The permeability constants of fluoro-perchlorate and acetate chisotan membranes for salicylic acid were 3.139 ${\times}10^{-7}cm^2$ min up to 60 min and that of 30% aspirin in the devices was 4.739${\times}10^{-7}cm^2$sec upto 60 min. As the loading dose of aspirin in a chitosan device increased, water up-take of chitosan device increased, but in case of salicylic acid it decreased. The release rate increased with increase in the molecular volume of the drugs. Thses result suggest that the release mechanism may be controlled mainly by diffusion through pores.

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UMG 실리콘을 이용한 태양전지 공정에서 Phosphorus 확산과 게터링 (Phosphorus Diffusion and Gettering in a Solar Cell Process using UMG Silicon)

  • 윤성연;김정;최균
    • 한국세라믹학회지
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    • 제49권6호
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    • pp.637-641
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    • 2012
  • Due to its high production cost and relatively high energy consumption during the Siemens process, poly-silicon makers have been continuously and eagerly sought another silicon route for decades. One candidate that consumes less energy and has a simpler acidic and metallurgical purification procedure is upgraded metallurgical-grade (UMG) silicon. Owing to its low purity, UMG silicon often requires special steps to minimize the impurity effects and to remove or segregate the metal atoms in the bulk and to remove interfacial defects such as precipitates and grain boundaries. A process often called the 'gettering process' is used with phosphorus diffusion in this experiment in an effort to improve the performance of silicon solar cells using UMG silicon. The phosphorous gettering processes were optimized and compared to the standard POCl process so as to increase the minority carrier lifetime(MCLT) with the duration time and temperature as variables. In order to analyze the metal impurity concentration and distribution, secondary ion mass spectroscopy (SIMS) was utilized before and after the phosphorous gettering process.

Microstructures and Dielectric Properties of SrTiO$_3$-Based BL Capacitor with Content of Ca

  • 김충혁;최운식;이준웅
    • 한국전기전자재료학회논문지
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    • 제12권1호
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    • pp.35-43
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    • 1999
  • Microstructures and dielectric properties of (Sr$\_$1-x/Ca$\_$x/) TiO$_3$-0.006Nb$_2$O$\_$5/ (0.05$\leq$x$\leq$0.2) boundary layer ceramics were investigated. The samples fired in a reducing atmosphere(N$_2$) were painted on the surface with CuO paste for the subsequent grain boundary diffusion, and then annealed at 1100$^{\circ}C$ for 2 hrs. The metal oxide of CuO infiltrated by thermal diffusion from surface of sample presents continuously in not grain but only grain boundary, and makes up thin boundary phase. The SEM photo, and EDAX revealed that CuO was penetrated rapidly into the bulk along the grain boundaries during the annealing. The average grain sizes is continuously increased as the content of substitutional Ca is increased from 5[mol%] to 15[mol%], but the average grain size of the sample with content of 20[mol%] Ca is slightly decreased. In the samples with content of 10∼15[mol%] Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss <0.3[%], and capacitance change rate as a function of temperature <${\pm}$10[%], respectively. All samples in this study exhibited dielectric relaxation with frequency as a functior of the temperature.

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