• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.134-137
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• 2019

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.

• Earthquakes and Structures
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• v.19 no.6
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• pp.445-457
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• 2020

An ultra-high voltage (UHV) transmission system has the advantages of low circuitry loss, high bulk capacity and long-distance transmission capabilities over conventional transmission systems, but it is easier for this system to cross fault rupture zones and become damaged during earthquakes. This paper experimentally and numerically investigates the seismic responses and collapse failure of a UHV transmission tower-line system crossing a fault. A 1:25 reduced-scale model is constructed and tested by using shaking tables to evaluate the influence of the forward-directivity and fling-step effects on the responses of suspension-type towers. Furthermore, the collapse failure tests of the system under specific cross-fault scenarios are carried out. The corresponding finite element (FE) model is established in ABAQUS software and verified based on the Tian-Ma-Qu material model. The results reveal that the seismic responses of the transmission system under the cross-fault scenario are larger than those under the near-fault scenario, and the permanent ground displacements in the fling-step ground motions tend to magnify the seismic responses of the fault-crossing transmission system. The critical collapse peak ground acceleration (PGA), failure mode and weak position determined by the model experiment and numerical simulation are in relatively good agreement. The sequential failure of the members in Segments 4 and 5 leads to the collapse of the entire model, whereas other segments basically remain in the intact state.

• Korean Journal of Metals and Materials
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• v.49 no.12
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• pp.930-936
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• 2011

In the present study, we show that the addition of Ag, an element having a positive enthalpy of mixing with Cu in the liquid state, enables the simultaneous enhancement of the glass forming ability and the plasticity in Cu-Zr-Ag bulk metallic glasses (BMGs). Rods of 4 mm diameter could be prepared with a fully amorphous structure and values of plastic strain up to 18% were measured under a compression mode for compositions around $Cu_{42.5}Zr_{47.5}Ag_{10}$. The possible role of Ag in the change of the atomic structure and the enhancement of the plastic strain in the ternary Cu-Zr-Ag BMGs is discussed based on analyses from transmission electron microscopy and EXAFS (extended X-ray absorption fine structure).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.51-56
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• 2015

It has been used various pad finish materials to enhance the reliability of solder joint and recently Electroless Ni Electroless Pd Immersion Gold (the following : ENEPIG) pad has been used more than others. This study is about reliability according to being used in commercial Electrolytic Ni pad and ENEPIG pad, and was observed behavior of various Cu contents. After reflow, the inter-metallic compound (IMC) between solder and pad is composed of $Cu_6Sn_5$ (Ni substituted) by using EDS, and in case of ENEPIG, between IMC and Ni layer was observed the dark layer ($Ni_3P$ layer). Additional, it could be controlled the thickness of dark layer according to Cu contents. Investigated the different fracture mode between electrolytic Ni and ENEPIG pad after drop shock test, in case of soft Ni, accelerated stress propagated along the interface between $1^{st}$ IMC and $2^{nd}$ IMC, and in case of ENEPIG pad, accelerated stress propagated along the weaken surface such as dark layer. The unstable interface exists through IMC, pad material and solder bulk by the lattice mismatch, so that the thermal and physical stress due to the continuous exterior impact is transferred to the IMC interface. Therefore, it is strongly requested to control solder morphology, IMC shape and thickness to improve the solder reliability.

• Journal of the Mineralogical Society of Korea
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• v.28 no.4
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• pp.325-332
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• 2015

Apophyllite (KF)($K_{0.84}Ca_{3.99}Si_{7.70}O_{20}F_{0.72}{\cdot}8H_2O$), one of the sheet silicates, was compressed up to 7.7 GPa at ambient temperature and 15 high pressure data were obtained. Lattice parameters of the starting specimen were as follows: $a_0=8.954(2)\;{\AA}$, $c_0=15.795(2)\;{\AA}$, $V_0=1266.4(4)\;{\AA}^3$. Symmetrical diamond anvil cell was employed with synchrotron radiation in the mode of angular dispersive X-ray diffraction. Bulk modulus was determined to be 59(4) GPa when ${K_0}^{\prime}$ is 4. No clear first order phase transition symptom was observed in the series of XRD pattern. However, second-order phase transition cannot be ruled out from the correlation between normalized pressure and strain.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1047-1055
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• 2006

We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.355-363
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• 2015

HVDC technology has become popular as an economic mode of bulk power transmission over very long distances. Polymeric insulators in HVDC power transmission lines are affected by surface tracking and erosion problems due to contamination deposit, which pose a greater challenge in maintaining the reliability of the HVDC system. In addition, polymeric insulators are also naturally affected by aging due to various environmental stresses, which in turn accelerates the surface tracking and erosion problems. Research works towards the improvement of tracking and erosion resistance of polymeric insulators by adding nano-sized fillers in the base material are being carried out worldwide. However, surface tracking and erosion performance of nano-filled aged polymeric insulators for HVDC applications are not well reported. Hence, in the present work, tracking and erosion resistance of the nano $Al(OH)_3$ filled silicone rubber insulation material has been evaluated under DC voltages at different filler concentrations and aged conditions, as per IEC 60587 test procedures. Leakage current and contact angle measurements were carried out to understand the surface hydrophobicity. Moving average technique was used to analyze the trend followed by leakage current. Water aged specimen shows less tracking resistance when compared with thermal aged specimen. It is observed that nano-filler concentration of 5% is even sufficient to get better tracking/erosion resistance under DC voltages.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.3
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• pp.882-890
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• 1996

Mechanical properties, including Young's modulus, residual stress and rupture strength, of a thermally evaporated gold film have been measured form a blister test. In a theoretical study, the priniple of minimum potential energy and that of virtual work have been applied to the pressurized circular membrane problem, and load-deflection relations have been derived for typical membrane deflection mode of spheroidal shape. In an experimental study, circular gold membranes of 4800 A-thickness and 3.5mm diameter were fabricated by the silicon electropolishing technique. Mecahnical properties of the thin gold films were deduced from the load-deflection curves obtained by the blister test, Young's moduli, obtianed from blister test, have been in the range of 45-70 GPa, while those of bulk gold have been in the range of 78-80 GPa. Residual stresses in the evaporated gold films have been measured as 28-110MPa in tension, The rupture strength of the gold film has turned out to be almost equal to that of dental gold alloy (310-380MPa). It has been demonstrated that the present specimen fabrication method and blister test apparatus have been effective for simultaneous measurement of Young's modulus, residual stress and repture strength of thin solid films. Especially, the electropolishing technique employed here has provided a simple and practical way to fabricate thin membranes in a circular or an arbitrary shape, which could not be obtained by the conventional anisotropic silicon mecromachining technique.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.