• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.5 no.9
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• pp.1492-1512
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• 2011

Due to multiple hops, mobility and time-varying channel, supporting delay sensitive real-time traffic in wireless local area network-based (WLAN) mesh networks is a challenging task. In particular for real-time traffic subject to medium access control (MAC) layer control overhead, such as preamble, carrier sense waiting time and the random backoff period, the performance of real-time flows will be degraded greatly. In order to support real-time traffic, an efficient adaptive packet scheduling (APS) scheme is proposed, which aims to improve the system performance by guaranteeing inter-class, intra-class service differentiation and adaptively adjusting the packet length. APS classifies incoming packets by the IEEE 802.11e access class and then queued into a suitable buffer queue. APS employs strict priority service discipline for resource allocation among different service classes to achieve inter-class fairness. By estimating the received signal to interference plus noise ratio (SINR) per bit and current link condition, APS is able to calculate the optimized packet length with bi-dimensional markov MAC model to improve system performance. To achieve the fairness of intra-class, APS also takes maximum tolerable packet delay, transmission requests, and average allocation transmission into consideration to allocate transmission opportunity to the corresponding traffic. Detailed simulation results and comparison with IEEE 802.11e enhanced distributed channel access (EDCA) scheme show that the proposed APS scheme is able to effectively provide inter-class and intra-class differentiate services and improve QoS for real-time traffic in terms of throughput, end-to-end delay, packet loss rate and fairness.

• Proceedings of the Korean Information Science Society Conference
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• 2006.10a
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• pp.261-266
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• 2006

최근 낸드 플래시 메모리는 임베디드 저장 장치로서 많이 사용되고 있을 뿐만 아니라 플래시 메모리의 저장 용량의 대용량화로 하드 디스크를 대체하는 SSD(solid state disk) 같은 제품이 출시되고 있다. 플래시 메모리는 하드디스크에 비하여 저전력, 빠른 접근성, 물리적 안정성 등의 장점이 있지만 읽기와 쓰기의 연산의 불균형적인 비용과 덮어 쓰기가 안 되고 쓰기 전에 해당 블록을 지워야하는 부가적인 작업을 수행해야 한다. 이와 같은 특징은 플래시 메모리의 쓰기 성능을 저하 시키고 기존의 하드디스크를 대체하는 것을 어렵게 만든다. 이와 같은 플래시 메모리의 단점을 해결하기 위해서 본 논문에서 비휘발성 메모리와 플래시 메모리를 함께 사용하는 방법을 제안한다. 최근 MRAM, FeRAM, PRAM과 같은 차세대 메모리 기술의 발전과 배터리 백업 메모리의 가격 하락으로 인하여 비휘발성 메모리의 상품적 가치가 높아지고 있다. 하지만 아직까지 용량 대비 가격이 비효율적이기 때문에 소용량의 비휘발성 메모리를 활용하여 플래시 메모리의 쓰기 연산에 대한 단점을 보완하는 방법을 제안한다. 본 논문에서는 FTL 에서 비휘발성 메모리를 쓰기 버퍼로 이용한 여러 가지 버퍼 관리 정책을 실험하였고 각 관리 정책에 따른 플래시 메모리의 성능 향상을 측정하였다. 실험을 통하여 최대로 읽기의 횟수는 90% 감소, 쓰기 횟수는 33% 감소, 소거 횟수는 50% 감소 효과를 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.235-235
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• 2010

본 연구에서는 태양전지의 활성영역에 삽입할 InAs 양자점에 AlxGax-1As 장벽층을 삽입하여 그 두께변화에 따른 광학적 특성 변화를 photoreflectance spectroscopy (PR)과 photoluminescence (PL)를 이용하여 연구하였다. 본 연구에 사용된 InAs/AlGaAs 양자점 구조는 GaAs (100) 기판 위에 GaAs buffer layer를 500 nm 성장 ($Ts=580^{\circ}C$) 후 기판온도 $470^{\circ}C$에서 InAs 양자점, GaAs cap 층과 AlxGax-1As 장벽층 순서로 5 층의 InAs/GaAs/AlxGax-1As 양자점 구조를 형성하였다. GaAs cap 층의 두께는 4 nm로 고정하고 AlGaAs 장벽층 두께를 0~6 nm 까지 변화시켰다. 각 양자점 층 사이에 AlxGax-1As 장벽층의 삽입 유무에 따라 PR 신호에서 Franz-Keldysh oscillation (FKO)의 주기 변화가 관측되었다. AlGaAs 두께가 증가 할수록 PL 신호의 세기가 증가함을 보였으며 PL 신호의 온도의존 특성이 변화됨을 관측할 수 있었다. AlGaAs 장벽층 대신 AlAs 장벽층을 삽입한 시료에서도 유사한 경향성을 관측하였으며, 이는 양자점에 구속된 운반자의 터널링 현상과 높은 장벽층에 의한 운반자의 구속 강도의 변화에 의한 것으로 사료된다. 특히 장벽층의 유무에 따른 FKO의 변화는 시료의 표면 전기장의 변화에 기인한 것으로 운반자의 구속효과뿐만 아니라 InAs 양자점 성장중 형성된 표면결함 밀도의 변화에 의한 것으로 추정하였다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.11
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• pp.5179-5202
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• 2018

Transmission Control Protocol (TCP) is the most widely used protocol in the cloud data centers today. However, cloud data centers using TCP experience many issues as TCP was designed based on the assumption that it would primarily be used in Wide Area Networks (WANs). One of the major issues with TCP in the cloud data centers is the Incast issue. This issue arises because of the many-to-one communication pattern that commonly exists in the modern cloud data centers. In many-to-one communication pattern, multiple senders simultaneously send data to a single receiver. This causes packet loss at the switch buffer which results in TCP throughput collapse that leads to high Flow Completion Time (FCT). Recently, Software-Defined Networking (SDN) has been used by many researchers to mitigate the Incast issue. In this paper, a detailed survey of various SDN based solutions to the Incast issue is carried out. In this survey, various SDN based solutions are classified into four categories i.e. TCP Receive Window based solutions, Tuning TCP Parameters based solutions, Quick Recovery based solutions and Application Layer based solutions. All the solutions are critically evaluated in terms of their principles, advantages, and shortcomings. Another important feature of this survey is to compare various SDN based solutions with respect to different performance metrics e.g. maximum number of concurrent senders supported, calculation of delay at the controller etc. These performance metrics are important for deployment of any SDN based solution in modern cloud data centers. In addition, future research directions are also discussed in this survey that can be explored to design and develop better SDN based solutions to the Incast issue.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.1-5
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• 2018

In this study, the effects of indium (In) doping in InGaN/GaN multi quantum well (MQW) on photoelectrochemical (PEC) properties were investigated. Each quantum well (QW) layer with controlled In content were grown on sapphire substrate. Before growth of MQW, GaN growth consisted of various stages in the following order: buffer GaN growth, undoped GaN growth, and Si-doped n-type GaN growth. Absorbance of InGaN/GaN MQW having different In composition was higher than that of the InGaN/GaN MQW having a constant In composition. It indicates that InGaN layer having different In composition absorbs light having a broad spectrum energy. These results are in agreement with those in photoluminescence (PL). After evaluation of PEC properties, it demonstrated that InGaN/GaN MQW having different In composition was improved InGaN/GaN MQW having constant In composition in PEC water splitting ability.

• Journal of KIISE:Databases
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• v.34 no.2
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• pp.109-118
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• 2007

Recently, flash memory is used to store data in mobile computing devices such as PDAs, SmartCards, mobile phones and MP3 players. These devices need index structures like the B-tree to efficiently support some operations like insertion, deletion and search. The BFTL(B-tree Flash Translation Layer) technique was first introduced which is for implementing the B-tree on flash memory. Flash memory has characteristics that a write operation is more costly than a read operation and an overwrite operation is impossible. Therefore, the BFTL method focuses on minimizing the number of write operations resulting from building the B-tree. However, we indicate in this paper that there are many rooms of improving the performance of the I/O cost in building the B-tree using this method and it is not practical since it increases highly the usage of the SRAM memory storage. In this paper, we propose a BOF(the B-tree On Flash memory) approach for implementing the B-tree on flash memory efficiently. The core of this approach is to store index units belonging to the same B-tree node to the same sector on flash memory in case of the replacement of the buffer used to build the B-tree. In this paper, we show that our BOF technique outperforms the BFTL or other techniques.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.33 no.2
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• pp.93-97
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• 2007

Even in the moderately concentrated anionic surfactant system, some special encapsulation method can shield the papain enzyme from proteolytic attacks. The stabilization of enzyme has been a major issue for successful therapies. In this study, we first stabilized an enzyme, papain in the microcapsules by using polyols, polyethyleneglycol (PEG), poly-propyleneglycol (PPG), and PEG-PPG-PEG block copolymer. In the analysis of EDS and CLSM, it was demonstrated that polyols are effectively located in the interface of papain and polymer. Polyols located in the interface had an ability to buffer the external triggers by hydrophobic partitioning, preventing consequently the catalytic activity of papain in the micro-capsules. Second. we introduced multi-layer capsulation methods containing ion complex. Such a moderately concentrated anionic surfactant system as wash-off cleansers, surfactants and waters can cause instability of entrapped enzymes. Surfactants and water in our final products swell the surface of enzyme capsules and penetrate into the core so easily that we can not achieve the effect of enzyme, papain. In this case, the ion complex multi-layer capsule composed of sodium lauroyl sarcosinate and polyquaternium-6 could effectively prevent water from penetration into the core enzyme, followed by in vivo test, and evaluate the stratum corneum (SC) turn-over speed.

• Korean Journal of Soil Science and Fertilizer
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• v.43 no.1
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• pp.68-74
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• 2010

Since ${NO_3}^-$ is amore favorable electron acceptor than Fe, high ${NO_3}^-$ loads function as a redox buffer limiting the reduction of Fe and following release of ${PO_4}^{3-}$ in flooded paddy soil. The effect ${NO_3}^-$ loaded through irrigation water on Fe reduction and ${PO_4}^{3-}$ release in paddy soil was investigated. Pot experiment was conducted where irrigation water containing 5 or 10 mg N $L^{-1}$ of ${NO_3}^-$ was continuously applied at 1 cm $day^{-1}$, and changes of ${NO_3}^-$, $Fe^{2+}$ and ${PO_4}^{3-}$ concentrations in soil solution at 5 and 10 cm depths beneath the soil surface were monitored as a function of time. Irrigation of rice paddy with water containing 5 mg N $L^{-1}$ of ${NO_3}^-$ led to reduced release of $Fe^{2+}$ and prevented solubilization of P at 5 cm depth beneath the soil surface. And application of irrigation water containing 10 mg N $L^{-1}$ of ${NO_3}^-$ could further suppress Fe reduction and solubilization of P through 10 cm depth soil layer beneath the surface. These results suggest that the introduction of high level ${NO_3}^-$ with irrigation water in rice paddy can strongly limit Fe reduction and P solubilization in root zone soil layer in addition to the excessive supply of N to rice plants.