• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.346-347
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• 2007

Aluminum nitride (AlN) thin films were deposited on Polycrystalline (poly) 3C-SiC buffer layers using pulsed reactive magnetron sputtering. Characteristics of AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. As a result, highly (002) oriented AlN thin films with almost free residual stress were achieved using 3C-SiC buffer layers. Therefore, AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.177-180
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• 2002

The purpose of this thesis is to develope buffer materials by the plasma polymerization method. In this article the buffer materials, plasma poly thiophene(PPTh) is used to study the interface of eter/organic in organic light emitting diodes(OLED). The interface of meter/organic materials is the important and critical objectives in development of OLED. The hole transport layer was N,N'-dipheneyl-N, N'bis-(3-methypheneyl)-1,1'dipheneyl-4,4'-diamine (TPD); the host material of mission layer was 8-tris-hydroxyquinoline aluminium (Alq3). When PPTh was inserted between ITO and TPD, emission efficiency increased.

• Nuclear Engineering and Technology
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• v.53 no.3
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• pp.1041-1048
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• 2021

An engineered barrier system (EBS) for the disposal of high-level radioactive waste (HLW) is composed of a disposal canister with spent fuel, a buffer material, a gap-filling material, and a backfill material. As the buffer is located in the empty space between the disposal canisters and the surrounding rock mass, it prevents the inflow of groundwater and retards the spill of radionuclides from the disposal canister. Due to the fact that the buffer gradually becomes saturated over a long time period, it is especially important to investigate its thermal-hydro-mechanical-chemical (THMC) properties considering variations of saturated condition. Therefore, this paper suggests a new method of measuring thermal conductivity and water suction for single compacted bentonite at various levels of saturation. This paper also highlights a convenient method of saturating compacted bentonite. The proposed method was verified with a previous method by comparing thermal conductivity and water suction with respect to water content. The relative error between the thermal conductivity and water suction values obtained through the proposed method and the previous method was determined as within 5% for compacted bentonite with a given water content.

• Nuclear Engineering and Technology
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• v.31 no.6
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• pp.39-50
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• 1999

The physicochemical, mineralogical, hydraulic, swelling and mechanical properties of a domestic bentonite for use as the buffer material in a high-level waste repository have been measured. The bentonite is identified to be a Ca-bentonite, and the hydraulic conductivity of the compacted bentonite with the dry density higher than 1.4 Mg/㎥ is lower than 10$^{-11}$ m/s When the dry densities are 1.4 to 1.8 Mg/㎥, the swelling pressures are in the range of 6.6 to 143.5 kg/$\textrm{cm}^2$. The unconfined compressive strength is about 94 kg/$\textrm{cm}^2$, and the coefficient of volume change and the coefficient of consolidation are in the range of 0.O0249 to 0.02142 $m^2$/MN and 0.018 to 0.115$m^2$/year, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.261-262
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• 2006

High temperature superconducting coated conductor has multi-layer structure of protecting layer/superconducting layer/buffer layer/metallic substrate. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is $CeO_2$(cap layer)/YSZ(diffusion barrier layer)/$CeO_2$(seed layer). Multi-buffer layer deposition required many times and process. Therefore single buffer layer deposition study reduce 2G HTS manufacture efforts. Evaporation technique for single buffer deposition method is used for the $CeO_2$ layer. $CeO_2$ single buffer film could be achieved in the chamber. Detailed deposition conditions (temperature and partial gas pressure of deposition) were investigated for the rapid growth of high quality $CeO_2$ single buffer film.

• Tunnel and Underground Space
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• v.24 no.4
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• pp.316-324
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• 2014

In the underground 500 m depth, the high level radioactive waste disposal system is made by boring the tunnel in the base rock and putting the high level waste disposal canister that is the surrounding form with the buffer material. According to the many statistics, it is the tendency that the earthquake increases in the Korean peninsula every year. In case that the earthquake is generated, the disposal canister in the rock mass can be broken due to the shearing force in the underground. Furthermore, a major environmental problems can be caused by the radioactive harmful substances. In this study, the earthquake-proof type buffer material was developed with the protection method safely on the earthquake. The main parameter having an effect on the earthquake-resistant performance was analyzed and the earthquake-proof type buffer material was designed. The shear analysis model was developed and the performance of the earthquake-proof type buffer material was evaluated by using ABAQUS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.297-297
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• 2008

Buffer layers play an important role in the development of high critical current density coated conductor. $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ buffer layers were compatible with MgO surfaces and also provide a good template for growing high current density REBCO(RE=Rare earth) films. Systematic studies on the influences of pulsed laser deposition parameters (deposition temperature, deposition pressure, processing gas, laser energy density, etc.) on microstructure and texture properties of $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ films as buffer layer deposited on ion-beam assisted deposition MgO (IBAD_MgO) template by pulse laser deposition method, were carried out. These results will be presented together with the discussion on the possible use of this material in HTS coated conductor as buffer.

• Journal of the Korean Geotechnical Society
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• v.36 no.10
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• pp.33-39
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• 2020

A geological repository has been considered as an option for the disposal of high-level radioactive waste (HLW). The HLW is disposed in a host rock at a depth of 500~1,000 meters below the ground surface based on the concept of engineered barrier system (EBS). The EBS is composed of a disposal canister, buffer material, backfill material, and gap-filling material. The compacted bentonite buffer is very important since it can restrain the release of radionuclide and protect the canister from the inflow of ground water. The saturation of the buffer decreases because high temperature in a disposal canister is released into the surrounding buffer material, but saturation of the buffer increases because of the inflow of ground water. The unsaturated properties of the buffer are critical input parameters for the entire safety assessment of the engineered barrier system. In Korea, Gyeongju bentonite can be considered as a candidate buffer material, but there are few test results of the unsaturated properties considering temperature variation. Therefore, this paper conducted experiment of soil-water characteristic curve for the Gyeongju compacted bentonite considering temperature variation under a constant water content condition. The relative error showed approximately 2% between test results and modified van-Genuchten model values.