• Title/Summary/Keyword: Bubble-Type Motion Detector

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Bubble-type Motion Detector Using a Pulsed-mode Oscillator and Delay Line (펄스 모드 발진기와 지연선로를 이용한 버블형 동작감지기)

  • Lee, Ik-Hwan;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.3
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    • pp.342-348
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    • 2015
  • This paper presents a new motion detector that has a bubble-layer detection zone using a pulsed-mode oscillator and delay line. The proposed motion detector controls the bubble-layer detection zone with pulse width of transmitted signals and creates IF signals only by reflected signals from the target within the detection zone whose position is determined by time delay of the delay line. The fabricated motion detector uses the pulsed-mode voltage controlled oscillator as a signal source which has a center frequency of 8 GHz, pulse width of 2 nsec and pulse period of 30 nsec. It successfully makes the bubble-layer detection zones at 1 m, 3 m and 5 m distant from itself using two delay lines with 7 nsec and 12 nsec delay, and is also demonstrated to detect the target within the detection zones.

Wideband Colpitts Voltage Controlled Oscillator with Nanosecond Startup Time and 28 % Tuning Bandwidth for Bubble-Type Motion Detector (나노초의 발진 기동 시간과 28 %의 튜닝 대역폭을 가지는 버블형 동작감지기용 광대역 콜피츠 전압제어발진기)

  • Shin, Im-Hyu;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.11
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    • pp.1104-1112
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    • 2013
  • This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1~7.5 dBm and the startup time of less than 2 nsec.