• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2004.11a
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• pp.415-415
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• 2004

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.84-87
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• 2000

In this paper, a high gain-broad bandwidth MMIC distributed amplifier was designed using cascaded single section distributed amplifier configuration. The PHEMT for this studies was fabricated at our lab The PHEMT has a 0.2 $\mu\textrm{m}$ gate length. a 80 $\mu\textrm{m}$ unit gate width and 4 gate fingers. A designed MMIC amplifier have higher S$\sub$21/ gain than the common distributed amplifier using the same number of active devices. From the simulated result, we obtained that the S$\sub$21/ gain of DC ∼ 20 GHz bandwidth was 15.6 dB and flatness was ${\pm}$0.9 dB, and input and output reflection coefficient were lower than -8 dB. The simulated gain shows an improvement 7.3 dB compared with those of conventional distributed amplifier. And the chip size is 2.0 ${\times}$ 1.2 $\textrm{mm}^2$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.2 s.344
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• pp.76-80
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• 2006

In this paper, broadband balanced amplifier has been realized with Three-Arm Branch $90^{\circ}$ Hybrid Coupler at center frequency 2GHz. $90^{\circ}$ Hybrid Branch-Line Coupler has been compared with Three-Arm Branch $90^{\circ}$ Hybrid Coupler. The bandwidth VSWR and gain or proposed amplifier have been 480MHz, 1.06 and 15.47dB, respectively.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.5
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• pp.575-582
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• 2007

In this paper, a 100 Watt high power amplifier has been implemented and performed evaluation, which is operating at UHF band ($470\;{\sim}\;806\;MHz$) for Digital TV repeater. To achieve increase of bandwidth and high power capability, 3-way power combiner and divider of Wilkinson type was adopted. In order to measure the fabricated 100 Watt power amplifier, the estimation technique function which makes equivalent mask was used. As a result of the measurement, the existence of pilot signal is confirmed and the signal transmitted at the rated output power 100 Watt is brought out the flat feature through 6 MHz bandwidth. and it resulted that its value was less than -47 dB at the edge of radiation channel and less than -110 dB at more than 6 MHz position from channel edge.

• ETRI Journal
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• v.39 no.1
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• pp.51-61
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• 2017

This paper demonstrates a systematic approach for the design of broadband, high efficiency, high power, Class-AB RF amplifiers with high gain flatness. It is usually difficult to simultaneously achieve a high gain flatness and high efficiency in a broadband RF power amplifier, especially in a high power design. As a result, the use of a computer-aided simulation is most often the best way to achieve these goals; however, an appropriate initial value and a systematic approach are necessary for the simulation results to rapidly converge. These objectives can be accomplished with a minimum of trial and error through the following techniques. First, signal gain variations are reduced over a wide bandwidth using a proper pre-matching network. Then, the source and load impedances are satisfactorily obtained from small-signal and load-pull simulations, respectively. Finally, two high-order Chebyshev low-pass filters are employed to provide optimum input and output impedance matching networks over a bandwidth of 100 MHz-500 MHz. By using an EM simulation for the substrate, the simulation results were observed to be in close agreement with the measured results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.1-6
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• 2008

In this paper, millimeter-wave broadband MHEMT (Metamorphic High Electron Mobility Transistor) cascode amplifiers were designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs MHEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 588 mS/mm of maximum transconductance. The current gain cut-off frequency($f_T$) is 139 GHz and the maximum oscillation frequency($f_{max}$) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (Coplanar Waveguide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the MHEMT MMIC process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz between 20.76 to 71.13 GHz. Also, this amplifier represents the S21 gain with the average 7.07 dB gain in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.5
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• pp.1038-1044
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• 2011

In this paper, the multichannel intermediate frequency transceiver for broadband multimedia system is designed and the experimental results are analyzed. Basic elements of the transceiver such as frequency synthesizer, amplifier, mixer, automatic gain control amplifier are introduced. The analysis technique described here applies not only to amplifier but also to any other nonlinear components such as mixers and frequency doubler. Through the investigation of the power spectrum density of the transmitted signal, the phase noise of the local oscillator is evaluated below 70 dBc/kHz. The frequency characteristics of the modulated signal is flat within the system bandwidth. Also the effects of adjacent channel interference and supurious emission are analyzed. And the function of automatic gain control amplifier is well operated.

• 한국ITS학회:학술대회논문집
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• 2004.11a
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• pp.93-96
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• 2004

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.788-793
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• 2004

This paper proposes new configuration for the dual power amplifier that operates at 5.8 GHz for the wireless LAN and 1.8 GHz for the PCS. It dose not select the input signal but amplify the dual band signals simultaneously. Broadband diplexer is used at the input to separate the dual band signals. Output power of each amplifier is 1 W. The PBG is employed to improve the performance of power amplifier. Generally, the PBG is employed at the end of output matching network. But in this paper, the PBG is employed in the load pull output matching circuit of amplifer to maximize the output power.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.135-138
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• 2004

Mobile phone antenna needs a small size and light weight for carrying and handling. In case of receiving a wide band TV signal, it would be difficult to obtain a good impedance matching between the antenna and the circuit due to a large capacitive reactance of antenna. Buffer amplifier was established on the teflon( ${\varepsilon}_r=3.38$, h=20mils) substrate by using GaAs FET( CPY30 ) and Silicon RF Transistor( BFP540 ) produced by Infineon and experimented.