• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.121-128
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• 2010

This paper presents a design of a 100 W high-efficiency power amplifier, whose operational frequency band expands from 30 to 512 MHz, using negative feedback network, push-pull structure, broadband RF choke, and transmission line transformer for balun configuration. The push-pull amplifier has been tuned for higher output power using a shunt capacitor as a matching component at its load especially for high-frequency region. The implemented power amplifier exhibited a very flat power gain of $18.34{\pm}0.9\;dB$ throughout the operating frequency band and very high power-added efficiency(PAE) of greater than 40% at an output power of 100 W. It also showed second- and third-harmonic distortion levels of below -34 dBc and -12 dBc, respectively, through the entire operating frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.