• 한국초전도ㆍ저온공학회논문지
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• 제11권1호
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• pp.45-48
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• 2009

Research on the mechanical properties of the dielectric paper and mini-model cable are important for optimum electrical insulation design of HTS cable, because the HTS cable experience of mechanical stress, such as tensile and bending stress. Also, it is operated at cryogenic temperature. Therefore, this paper discusses the experiment results on the AC and lighting impulse breakdown characteristics, partial discharge inception and extinction characteristics, and external shape change of the insulation layer according to bending strain of the mini-model cable.

• 조명전기설비학회논문지
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• 제23권2호
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• pp.190-195
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• 2009

본 논문은 모의된 시공불량에 따른 결점을 가진 배전급 종단부의 전기적인 사고에 대하여 실험적으로 조사한 것을 나타낸다. 실험에 조립형과 열수축형인 두 개의 종단재를 사용하였다. 우리는 시공불량에 따른 모의 결점을 가진 케이블 종단부를 제작하여 교류 및 임펄스 내전압 시험과 같은 절연 특성을 고찰하였다. 두께 감소나 하우징의 스트레스콘과 반도전층 사이의 틈과 같은 결점의 영향에 대하여 연구하였다. 절연체의 두께 감소 시 교류 절연파괴 강도는 급격히 감소하였고 이 절연체의 절연파괴 흔적은 타원형으로 나타났다. 스트레스콘과 반도전출 사이의 틈은 절연내력에 매우 나쁜 영향을 주었다. 열수축형에서, 교류 절연파괴 전압은 가열 시간이 짧을 때 낮아졌다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

• 전자공학회논문지A
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• 제33A권12호
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• pp.77-82
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• 1996

The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

• 한국안전학회지
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• 제26권6호
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• pp.7-12
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• 2011

In recent years, environmental concerns have been raised on the use of poorly biodegradable fluids in electrical apparatus in regions where spills from leaks and equipment failure could contaminate the surroundings. The newly invented vegetable insulating oil is highly biodegradable and have negligible impact on the environment, human health and the ecosystem. For development of the environmental-friendly pole transformer using vegetable insulating oil, the dielectric constructions of the pole transformer were discussed in this paper. Depending on the dielectric constructions, the AC breakdown characteristics of the Nomex insulating papers and the vegetable insulating oil were studied by simulated electrode systems. Based on the experimental results, the maximum design stress($E_{max}$) for insulation design of the environmental-friendly pole transformer were suggested.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.544-547
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• 1999

To develop the better insulants. the zeolite particle, which is aluminosilicate mineral, was filled In the DGEBA/MDA/SN epoxy resin system. Dynamic DSC curves of cured specimens with various contents of zeolite were observed and the glass transition temperature(T$_{g}$) was obtained. According to this result, we could carry out the experiment concerned with the dielectric breakdown strength around T$_{g}$ and find the limit temperature for the application of the DDEBA/MDA/SN system filled with natural zeolite. T$_{g}$ increased with the content of zeolite. As the temperature increased, the dielectric breakdown strength decreased rapidly, in the region of T$_{g}$. At the high temperature, the deterioration by electrical stress was activated. The diameter of puncture at the high temperature was larger 7han that at the room temperature.erature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.71-74
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• 1998

In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.241-244
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• 1991

In this paper, we introduced Silicon Oxynitride films deposited by Laser CVD, and evaluated the electrical breakdown of these films by TZDB(Time Zero Dielectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test. In addition, high frequency C-V test was done in order to calculate hysterisis and flatband voltage(before and after electric field stress). Failure times against eletric field are examined and electric field accelation factor $\beta$ are obtained, and long term reliability was also described by extrapolating into life time in the operating voltage(5V). In this experiments, the deposited films with increased temperature represented small flatband voltage, hysterisis and favorable breakdown characteristics, this is why the hydrogen in the film was decreased and the film was densified, long term reliability was good in the laser CVD SiON films.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.338-340
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• 2017

Breakdown of solid insulating materials in power equipment could result in undesired outages and replacements, and may be due to an increase in electric stress on the material. Therefore, it is necessary to conduct a proper diagnosis of materials before their practical use. In this work, a few inherent properties of different non-cellulosic insulating materials, such as Nomex, Teflon, laminated Nomex, glass bonded mica, epoxy resin bonded mica paper, and epoxy resin bonded fiberglass, have been evaluated by performing non-destructive dielectric diagnostic measurements, and an attempt has been made to correlate these basic parameters to evaluate the breakdown strength (BDS). An equation has been proposed using a basic theory which defines the correlation between the BDS, dielectric constant, dissipation factor, sample thickness, and volume resistivity. The results obtained from the equation are also compared with the experimental values. The suggested equation will be helpful to predict the BDS of any non-cellulosic material without experimentation in the laboratory.

• Journal of Electrical Engineering and Technology
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• 제11권5호
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• pp.1377-1382
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• 2016