• 한국동물학회지
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• 제32권2호
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• pp.153-162
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• 1989

난자성숙 재개와 1-세포기 배아의 세포주기에서, cAMP-의존성 protein kinase A와 diacylglycerol-의존성 protein kinase C가 핵막붕괴에 미치는 영향을 조사하였다. 난자성숙 재기는 dbcAMP, IBMX, TPA, 또는 diacyllycerol에 의해 억제되었다. 또한 protein kinase A와 protein kinase C 활성제를 같이 처리하면 난자성숙이 더욱 억제되었다. 그러나 1-세포기 배아의 전핵막붕괴에는 아무런 영향도 미치지 못하였으며, 단지 protein kinase C 활성제만이 세포질 분열을 억제하였다. 이상의 결과로부터, protein kinase A와 protein kinase C에 의한 단백질 인산화 양상이 GV난자의 핵막붕괴와 1-세포기 배아의 전핵막붕괴에 미치는 세포내 작용기작은 상이함을 알 수 있었으며, 전기영동 결과, 81 KD 단백질이 난자성숙 재개에 중요한 역할을 하리라 사료되었다.

• 조명전기설비학회논문지
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• 제13권4호
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• pp.87-95
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• 1999

새로운 종류의 고체상태 대전력, 고속전자장치 즉 광전도전력스위치(PCPS)의 가장 큰 문제점은 평균전계하의 표면에서 스위치 섬락의 대부분이 반도체의 벌크파괴보다 낮다는 것이다. 이러한 문제를 극복하고 고밀도 고체 전력 스위치에 사용할 수 있는 유일한 방법이 고체 절연물로 표면을 페시베이션(Passivation)하는 것이다. 본 실험에서 Silicon의 절연내력은 진공중에서 10[kV/cm]에서 심하게 열화되어졌고, 기중에서 30[kV/cm], SF6에서 80∼90[kV/cm]으로 개선되지만, 스위치의 주 응용이 진공 또는 우주에서 사용되기 때문에 이러한 현상은 매우 심각한 문제이다. 페시베이션후 소자들은 진공과 기중에서 언페시베이션된 소자가 SF6내에서 얻을 수 있는 만큼의 높은 파괴값을 가졌다. 이러한 결과로 볼 때 페시베이션된 소자들이 매우 우수한 파괴값을 가진다는 것을 알 수 있다. 본 논문은 고전계 하에서 페시베이션 전·후 실리콘 파괴의 주 특성과 메커니즘에 대해 밝혔다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1193-1196
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• 1993

Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.

• 한국세라믹학회지
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• 제29권7호
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• pp.572-576
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• 1992

Dielectric constant of ferroelectric ceramics with poling is important in relation to the mechanism of dielectric breakdown. From the research about the dielectric constant variation with poling in tetragonal and rhombohedral phase PZT ceramics, it is known that the dielectric constant after poling is determined by competing effects between increasing effects (compressive stress induced by electrostriction of piezoelectric effects) and decreasing increase in large grain size with poling is smaller than in small grain size.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.207-210
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• 1998

Electrical properties such as space charge distribution and electrical conduction of XLPE/VLDPE blends were studied. When the VLDPE is blended, residual charge inside XLPE increases. In case of electrical conduction characteristics, there were no changes in electrical conduction mechanism, space charge limited conduction. XLPE/VLDPE blend including crosslinking coagent showed relatively small current density. It might be due to the carbonyl group in crosslinking coagent.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1807-1809
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• 1996

The axial discharge at switching operations of EHV $SF_6$ disconnector can lead to the breakdown to the enclosure. Precursor in periphery zone leads to formation of leader over some time delay. Injected charge value depends on electric field and gap geometry. The calculation method for parameters of $SF_6$ insulation for DS in EHV-GIS is suggested by using the new criterion of leader inception in connection with periphery field nearby the boundary of streamer zone.

• Journal of Electrical Engineering and Technology
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• 제7권5호
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• pp.778-783
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• 2012

The synthetic short-circuit making test to adequately stress the circuit breaker has been specified as the mandatory test duty in the IEC 62271-100. The purpose of this test is to give the maximum pre-arcing energy during making operation. And this requires the making operation with symmetrical short-circuit current that is established when the breakdown between contact gap occurs near the crest of the applied voltage. Also, if the interrupting chamber of circuit breakers is designed as the type of common enclosure or the operation is made by the gang operated mechanism that three-phase contacts are operated by one common mechanism, three-phase synthetic making test is basically required. Therefore, several testing laboratories have developed and proposed their own test circuits to properly evaluate the breaker performance. With these technical backgrounds, we have developed the new alternative three-phase making circuit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.50-53
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• 2001

In this study, gate leakage current mechanism has been analyzed for GaAs MESFET with different temperatures ranging from 27$^{\circ}C$ to 300$^{\circ}C$ . It is expected that the thermionic and field emission at the MS contact will dominate the current flow. Thermal cycle is applied to test the reliability of the device. From the results, it is proved that thermal stress gradually increases the gate leakage current at the same bias conditions and leads to the breakdown and failure mechanism which is critical in the field equipment. Finally the gate contact under the repeated thermal shock has been tested to check the quality of Schottky barrier and the current will be expressed in the analytical from to associate with the electrical characteristics of the device.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2357-2360
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• 2010

Kinetic studies on the pyridinolysis of aryl dithiocyclopentanecarboxyaltes 2 were carried out at $60.0^{\circ}C$ in acetonitrile. In the aminolysis of 2, the $\beta_X$ values were 0.5 - 0.8 with anilines, and there was no breakpoint. However, in the pyridinolysis of 2, biphasic Bronsted plots were obtained, with a change in slope from a large value ($\beta_X{\cong}0.7$) to a small value ($\beta_X{\cong}0.4$) at $pK_{a}^0$ = 5.2. This was attributed to a change in the rate-limiting step from breakdown to the formation of a zwitterionic tetrahedral intermediate, $T^{\pm}$, in the reaction path, with an increase in the basicity of the pyridine nucleophile. An obvious change in the cross-interaction constant ${\rho}_{XZ}$ from a large positive ($\rho_{XZ}$ = +1.02) value to a small negative value (${\rho}_{XZ}$ = -0.17) supports the proposed mechanistic change.

• 대한전기학회논문지
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• 제39권2호
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• pp.175-182
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• 1990

In order to investigate the conduction characteistics of the biaxially oriented polypropylene film, several measurements have been carried out in the range of temperature between 5['c] and 25['c] as well as the field intensity between 10[MV/m] and 300[MV/m]. The whole range of the characteristics observed at 15['c] appears to be divided into five regions` the Ohmic conduction region due to ionic carrier below 40[MV/m], the region from 40[MV/m] to 70[MV/m] in which the conduction mechanism is attributed to Poole-Frenkel effect, the region from 70[MV/m] to 82[MV/m] in which the negative resistance characteristics are observed, then the region from 82[MV/m] which is dominated by Schottky effect and finally, the region from 240[MV/m] up to the point where dielectric breakdown occurs in which the mechanism is based on Flowler-Nordheim theory.